Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu3Ti4O12 Ceramics

Séka Simplice Kouassi; Jean-Pierre Sagou Sagou; Cécile Autret-Lambert; Sonia Didry; Anoop Nautiyal; Marc Lethiecq

doi:doi:10.11648/j.ijmsa.20170601.18

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Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu₃Ti₄O₁₂ Ceramics

Séka Simplice Kouassi, Jean-Pierre Sagou Sagou, Cécile Autret-Lambert, Sonia Didry, Anoop Nautiyal, Marc Lethiecq

Published in International Journal of Materials Science and Applications (Volume 6, Issue 1)

Received: 16 December 2016 Accepted: 27 December 2016 Published: 21 January 2017

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Abstract

In this work, effect of vanadium doping of CaCu₃Ti₄O₁₂ (CCTO) on microstructure and complex dielectric constant over wide frequency (100 Hz-1 MHz) and temperature (0°C – 160°C) ranges has been studied. The vanadium doping of CCTO system results in an increase of grain size, the grains being surrounded by melted-like grain boundaries. Real parts of dielectric constant of all samples are similar at low frequency (<1 kHz). In doped samples, above 1 kHz, a relaxation appears which is evidenced by a drop of real part of permittivity and a peak of its imaginary part. This relaxation phenomenon is very significant at relatively low doping rates and then decreases again as vanadium content increases. AC conductivity behavior of vanadium-doped CCTO can be divided in three regions depending on conduction processes. The calculated activation energies were close to 0.46 eV.

Published in	International Journal of Materials Science and Applications (Volume 6, Issue 1)
DOI	10.11648/j.ijmsa.20170601.18
Page(s)	54-64
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2017. Published by Science Publishing Group

Keywords

Ceramics, Solid State Reaction Method, Microstructure, Dielectric Properties, Electrical Conduction

References

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Séka Simplice Kouassi, Jean-Pierre Sagou Sagou, Cécile Autret-Lambert, Sonia Didry, Anoop Nautiyal, et al. (2017). Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu3Ti4O12 Ceramics. International Journal of Materials Science and Applications, 6(1), 54-64. https://doi.org/10.11648/j.ijmsa.20170601.18

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ACS Style

Séka Simplice Kouassi; Jean-Pierre Sagou Sagou; Cécile Autret-Lambert; Sonia Didry; Anoop Nautiyal, et al. Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu3Ti4O12 Ceramics. Int. J. Mater. Sci. Appl. 2017, 6(1), 54-64. doi: 10.11648/j.ijmsa.20170601.18

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AMA Style

Séka Simplice Kouassi, Jean-Pierre Sagou Sagou, Cécile Autret-Lambert, Sonia Didry, Anoop Nautiyal, et al. Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu3Ti4O12 Ceramics. Int J Mater Sci Appl. 2017;6(1):54-64. doi: 10.11648/j.ijmsa.20170601.18

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@article{10.11648/j.ijmsa.20170601.18,
  author = {Séka Simplice Kouassi and Jean-Pierre Sagou Sagou and Cécile Autret-Lambert and Sonia Didry and Anoop Nautiyal and Marc Lethiecq},
  title = {Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu3Ti4O12 Ceramics},
  journal = {International Journal of Materials Science and Applications},
  volume = {6},
  number = {1},
  pages = {54-64},
  doi = {10.11648/j.ijmsa.20170601.18},
  url = {https://doi.org/10.11648/j.ijmsa.20170601.18},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20170601.18},
  abstract = {In this work, effect of vanadium doping of CaCu3Ti4O12 (CCTO) on microstructure and complex dielectric constant over wide frequency (100 Hz-1 MHz) and temperature (0°C – 160°C) ranges has been studied. The vanadium doping of CCTO system results in an increase of grain size, the grains being surrounded by melted-like grain boundaries. Real parts of dielectric constant of all samples are similar at low frequency (<1 kHz). In doped samples, above 1 kHz, a relaxation appears which is evidenced by a drop of real part of permittivity and a peak of its imaginary part. This relaxation phenomenon is very significant at relatively low doping rates and then decreases again as vanadium content increases. AC conductivity behavior of vanadium-doped CCTO can be divided in three regions depending on conduction processes. The calculated activation energies were close to 0.46 eV.},
 year = {2017}
}

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TY  - JOUR
T1  - Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu3Ti4O12 Ceramics
AU  - Séka Simplice Kouassi
AU  - Jean-Pierre Sagou Sagou
AU  - Cécile Autret-Lambert
AU  - Sonia Didry
AU  - Anoop Nautiyal
AU  - Marc Lethiecq
Y1  - 2017/01/21
PY  - 2017
N1  - https://doi.org/10.11648/j.ijmsa.20170601.18
DO  - 10.11648/j.ijmsa.20170601.18
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 54
EP  - 64
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20170601.18
AB  - In this work, effect of vanadium doping of CaCu3Ti4O12 (CCTO) on microstructure and complex dielectric constant over wide frequency (100 Hz-1 MHz) and temperature (0°C – 160°C) ranges has been studied. The vanadium doping of CCTO system results in an increase of grain size, the grains being surrounded by melted-like grain boundaries. Real parts of dielectric constant of all samples are similar at low frequency (<1 kHz). In doped samples, above 1 kHz, a relaxation appears which is evidenced by a drop of real part of permittivity and a peak of its imaginary part. This relaxation phenomenon is very significant at relatively low doping rates and then decreases again as vanadium content increases. AC conductivity behavior of vanadium-doped CCTO can be divided in three regions depending on conduction processes. The calculated activation energies were close to 0.46 eV.
VL  - 6
IS  - 1
ER  -

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Author Information

Séka Simplice Kouassi

Laboratory of Environmental and Materials Chemistry, Jean Lorougnon GUEDE University, Daloa, Ivory Coast
Jean-Pierre Sagou Sagou

Laboratory of Materials Inorganics Chemistry, Félix Houphou?t BOIGNY University, Abidjan, Ivory Coast
Cécile Autret-Lambert

GREMAN UMR 7347 Laboratory, Fran?ois Rabelais University, Tours, France
Sonia Didry

GREMAN UMR 7347 Laboratory, Fran?ois Rabelais University, Tours, France
Anoop Nautiyal

GREMAN UMR 7347 Laboratory, Fran?ois Rabelais University, Tours, France
Marc Lethiecq

GREMAN UMR 7347 Laboratory, Fran?ois Rabelais University, Tours, France

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APA Style

Séka Simplice Kouassi, Jean-Pierre Sagou Sagou, Cécile Autret-Lambert, Sonia Didry, Anoop Nautiyal, et al. (2017). Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu3Ti4O12 Ceramics. International Journal of Materials Science and Applications, 6(1), 54-64. https://doi.org/10.11648/j.ijmsa.20170601.18

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ACS Style

Séka Simplice Kouassi; Jean-Pierre Sagou Sagou; Cécile Autret-Lambert; Sonia Didry; Anoop Nautiyal, et al. Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu3Ti4O12 Ceramics. Int. J. Mater. Sci. Appl. 2017, 6(1), 54-64. doi: 10.11648/j.ijmsa.20170601.18

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AMA Style

Séka Simplice Kouassi, Jean-Pierre Sagou Sagou, Cécile Autret-Lambert, Sonia Didry, Anoop Nautiyal, et al. Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu3Ti4O12 Ceramics. Int J Mater Sci Appl. 2017;6(1):54-64. doi: 10.11648/j.ijmsa.20170601.18

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@article{10.11648/j.ijmsa.20170601.18,
  author = {Séka Simplice Kouassi and Jean-Pierre Sagou Sagou and Cécile Autret-Lambert and Sonia Didry and Anoop Nautiyal and Marc Lethiecq},
  title = {Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu3Ti4O12 Ceramics},
  journal = {International Journal of Materials Science and Applications},
  volume = {6},
  number = {1},
  pages = {54-64},
  doi = {10.11648/j.ijmsa.20170601.18},
  url = {https://doi.org/10.11648/j.ijmsa.20170601.18},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20170601.18},
  abstract = {In this work, effect of vanadium doping of CaCu3Ti4O12 (CCTO) on microstructure and complex dielectric constant over wide frequency (100 Hz-1 MHz) and temperature (0°C – 160°C) ranges has been studied. The vanadium doping of CCTO system results in an increase of grain size, the grains being surrounded by melted-like grain boundaries. Real parts of dielectric constant of all samples are similar at low frequency (<1 kHz). In doped samples, above 1 kHz, a relaxation appears which is evidenced by a drop of real part of permittivity and a peak of its imaginary part. This relaxation phenomenon is very significant at relatively low doping rates and then decreases again as vanadium content increases. AC conductivity behavior of vanadium-doped CCTO can be divided in three regions depending on conduction processes. The calculated activation energies were close to 0.46 eV.},
 year = {2017}
}

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TY  - JOUR
T1  - Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu3Ti4O12 Ceramics
AU  - Séka Simplice Kouassi
AU  - Jean-Pierre Sagou Sagou
AU  - Cécile Autret-Lambert
AU  - Sonia Didry
AU  - Anoop Nautiyal
AU  - Marc Lethiecq
Y1  - 2017/01/21
PY  - 2017
N1  - https://doi.org/10.11648/j.ijmsa.20170601.18
DO  - 10.11648/j.ijmsa.20170601.18
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 54
EP  - 64
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20170601.18
AB  - In this work, effect of vanadium doping of CaCu3Ti4O12 (CCTO) on microstructure and complex dielectric constant over wide frequency (100 Hz-1 MHz) and temperature (0°C – 160°C) ranges has been studied. The vanadium doping of CCTO system results in an increase of grain size, the grains being surrounded by melted-like grain boundaries. Real parts of dielectric constant of all samples are similar at low frequency (<1 kHz). In doped samples, above 1 kHz, a relaxation appears which is evidenced by a drop of real part of permittivity and a peak of its imaginary part. This relaxation phenomenon is very significant at relatively low doping rates and then decreases again as vanadium content increases. AC conductivity behavior of vanadium-doped CCTO can be divided in three regions depending on conduction processes. The calculated activation energies were close to 0.46 eV.
VL  - 6
IS  - 1
ER  -

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