In this work Cu2ZnSnS4 (CZTS) films were deposited by using chemical spray pyrolysis (CSP) technique at substrate temperature of (400 ± 10) °C and thickness of about (300 ± 10) nm at different Thiourea Concentrations of (0.14, 0.16, 0.18, 0.20, 0.22 and 0.24) M. Copper chloride (CuCl), zinc chloride (ZnCl2), tin chloride (SnCl4.5H2O) and thiourea (SC(NH2)2) were used as sources of copper ions, zinc ions, tin ions and sulfur ions respectively. The structural, morphological and optical properties of these films have been studied using XRD, AFM, and UV-Visible spectroscopy respectively. The XRD results showed that all films are polycrystalline in nature with tetragonal structure and preferred orientation along (112) plane. The crystallite size (Dav) of all samples was calculated using Scherrer’s equation and it is found that the sample deposited at thiourea concentration of 0.20 M has maximum crystallite size of 31.25 nm, while it was minimum (18.02 nm) for the sample prepared at thiourea concentration of 0.16 M. The AFM results showed smooth and homogenous thin films. The optical energy band gap (Eg) for allowed direct electronic transition was calculated using Tauc’s plot. It is found that the energy band gap (Eg) decreases as the thiourea concentration increases and it was in the range of (2.22 - 1.75) eV. Urbach energy, refractive index, extinction coefficient and dielectric coefficient of all deposited films were estimated and the results were discussed.
| Published in | International Journal of Materials Science and Applications (Volume 5, Issue 6) |
| DOI | 10.11648/j.ijmsa.20160506.15 |
| Page(s) | 261-270 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
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Copyright © The Author(s), 2016. Published by Science Publishing Group |
CZTS Thin Films, Thiourea Concentration, Chemical Spray Pyrolysis, XRD, Optical Properties
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APA Style
Nabeel A. Bakr, Ziad T. Khodair, Hussein I. Mahdi. (2016). Influence of Thiourea Concentration on Some Physical Properties of Chemically Sprayed Cu2ZnSnS4 Thin Films. International Journal of Materials Science and Applications, 5(6), 261-270. https://doi.org/10.11648/j.ijmsa.20160506.15
ACS Style
Nabeel A. Bakr; Ziad T. Khodair; Hussein I. Mahdi. Influence of Thiourea Concentration on Some Physical Properties of Chemically Sprayed Cu2ZnSnS4 Thin Films. Int. J. Mater. Sci. Appl. 2016, 5(6), 261-270. doi: 10.11648/j.ijmsa.20160506.15
AMA Style
Nabeel A. Bakr, Ziad T. Khodair, Hussein I. Mahdi. Influence of Thiourea Concentration on Some Physical Properties of Chemically Sprayed Cu2ZnSnS4 Thin Films. Int J Mater Sci Appl. 2016;5(6):261-270. doi: 10.11648/j.ijmsa.20160506.15
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Download@article{10.11648/j.ijmsa.20160506.15,
author = {Nabeel A. Bakr and Ziad T. Khodair and Hussein I. Mahdi},
title = {Influence of Thiourea Concentration on Some Physical Properties of Chemically Sprayed Cu2ZnSnS4 Thin Films},
journal = {International Journal of Materials Science and Applications},
volume = {5},
number = {6},
pages = {261-270},
doi = {10.11648/j.ijmsa.20160506.15},
url = {https://doi.org/10.11648/j.ijmsa.20160506.15},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20160506.15},
abstract = {In this work Cu2ZnSnS4 (CZTS) films were deposited by using chemical spray pyrolysis (CSP) technique at substrate temperature of (400 ± 10) °C and thickness of about (300 ± 10) nm at different Thiourea Concentrations of (0.14, 0.16, 0.18, 0.20, 0.22 and 0.24) M. Copper chloride (CuCl), zinc chloride (ZnCl2), tin chloride (SnCl4.5H2O) and thiourea (SC(NH2)2) were used as sources of copper ions, zinc ions, tin ions and sulfur ions respectively. The structural, morphological and optical properties of these films have been studied using XRD, AFM, and UV-Visible spectroscopy respectively. The XRD results showed that all films are polycrystalline in nature with tetragonal structure and preferred orientation along (112) plane. The crystallite size (Dav) of all samples was calculated using Scherrer’s equation and it is found that the sample deposited at thiourea concentration of 0.20 M has maximum crystallite size of 31.25 nm, while it was minimum (18.02 nm) for the sample prepared at thiourea concentration of 0.16 M. The AFM results showed smooth and homogenous thin films. The optical energy band gap (Eg) for allowed direct electronic transition was calculated using Tauc’s plot. It is found that the energy band gap (Eg) decreases as the thiourea concentration increases and it was in the range of (2.22 - 1.75) eV. Urbach energy, refractive index, extinction coefficient and dielectric coefficient of all deposited films were estimated and the results were discussed.},
year = {2016}
}
TY - JOUR T1 - Influence of Thiourea Concentration on Some Physical Properties of Chemically Sprayed Cu2ZnSnS4 Thin Films AU - Nabeel A. Bakr AU - Ziad T. Khodair AU - Hussein I. Mahdi Y1 - 2016/11/01 PY - 2016 N1 - https://doi.org/10.11648/j.ijmsa.20160506.15 DO - 10.11648/j.ijmsa.20160506.15 T2 - International Journal of Materials Science and Applications JF - International Journal of Materials Science and Applications JO - International Journal of Materials Science and Applications SP - 261 EP - 270 PB - Science Publishing Group SN - 2327-2643 UR - https://doi.org/10.11648/j.ijmsa.20160506.15 AB - In this work Cu2ZnSnS4 (CZTS) films were deposited by using chemical spray pyrolysis (CSP) technique at substrate temperature of (400 ± 10) °C and thickness of about (300 ± 10) nm at different Thiourea Concentrations of (0.14, 0.16, 0.18, 0.20, 0.22 and 0.24) M. Copper chloride (CuCl), zinc chloride (ZnCl2), tin chloride (SnCl4.5H2O) and thiourea (SC(NH2)2) were used as sources of copper ions, zinc ions, tin ions and sulfur ions respectively. The structural, morphological and optical properties of these films have been studied using XRD, AFM, and UV-Visible spectroscopy respectively. The XRD results showed that all films are polycrystalline in nature with tetragonal structure and preferred orientation along (112) plane. The crystallite size (Dav) of all samples was calculated using Scherrer’s equation and it is found that the sample deposited at thiourea concentration of 0.20 M has maximum crystallite size of 31.25 nm, while it was minimum (18.02 nm) for the sample prepared at thiourea concentration of 0.16 M. The AFM results showed smooth and homogenous thin films. The optical energy band gap (Eg) for allowed direct electronic transition was calculated using Tauc’s plot. It is found that the energy band gap (Eg) decreases as the thiourea concentration increases and it was in the range of (2.22 - 1.75) eV. Urbach energy, refractive index, extinction coefficient and dielectric coefficient of all deposited films were estimated and the results were discussed. VL - 5 IS - 6 ER -
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