Pulsed Laser Deposition Methods Made Aluminum Doped ZnO Conductive Films

Shuang Liu; Wei Wang

doi:doi:10.11648/j.ijmsa.20150405.23

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Pulsed Laser Deposition Methods Made Aluminum Doped ZnO Conductive Films

Shuang Liu, Wei Wang

Published in International Journal of Materials Science and Applications (Volume 4, Issue 5)

Received: 1 December 2015 Published: 1 December 2015

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Abstract

Zinc Oxide is a novel semiconductor compound of II-VI group of the 3.37eV band gap. At room temperature, its exciton binding energy is 60 meV, which is one of the most potential light emitting devices in the field of ultraviolet. This experiment, using pulsed laser deposition, prepareing ZnO conductive films doping Al₂O₃ on silicon substrates and adopting ZnO waler, sintered, with Al2O3 as the target material, studies the influence of the dopant amount of alumina on thin film electrical conductivity and film crystallization conditions. The result shows: The thin film prepared by pulsed laser deposition method is mixed evenly, easy to control. Moreover, when the doping quantity of Al₂O₃ is 3.5%, the ZnO thin film has the least resistance rate and its crystallization is in the best condition.

Published in	International Journal of Materials Science and Applications (Volume 4, Issue 5)
DOI	10.11648/j.ijmsa.20150405.23
Page(s)	364-367
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2015. Published by Science Publishing Group

Keywords

Pulsed Laser Deposition, ZnO, Al₂O₃, Thin Films, Resistance Rate, Target Material, Doping Quantity

References

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[3]	Kishwar S, ul Hasan K,Tzamalis G, et al. Electro-optical and Cathodoluminescence Properties of Low Temperature Grown ZnO Nanorods/p-GaN White Light Emitting Diodes[J].Phys. Stat. Sol.(a),2010,207(1):67-72.
[4]	张振飞,刘海瑞,张华等.ZnO/Ag微米球的合成与光催化性能[J].高等学校化学学报,2013,34(12):2827-2833。
[5]	Makino T, Chia C H, Tuan Nguen T, et al. Radiative and nonradiative recombination processes in lattice-matched (Cd, Zn)O/(Mg, Zn)O multiquantum wells[J]. Appl. Phys. Lett, 2000, 77 (11): 1632-1634.
[6]	Kim S, Nam G, Yoon H, et al. Structural, Optical, and Electrical Properties of Zn0 Thin Films Deposited by Sol-gel Dip-coating Process at Low Temperature[J]]. Electroraic Materials Lxtters, 2014, 10 (4):869-878.
[7]	Kawaharamura T, Orita H, Shirahata T, et al. lnfluence of Annealing under Reducing Ambient on Properties of ZnO Thin Films Prepared by Mist CVD[J]. Physica Status Solidi(c), 2012, 9 (2):190-193.
[8]	黄佳木,徐成俊.氮流量对磁控溅射法制备氮化钛薄膜光学性能的影响[J].光学学报,2005,25(9):1293-1296。
[9]	Zeng Y, Zhao Y, Jiang Y J. Zn0 Thin films Prepared on Titanium Substrate by PLD Technique at Different Substrate Temperatures[J].Surface and lnterface Analysis,2014.46 (9): 602-606.
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APA Style

Shuang Liu, Wei Wang. (2015). Pulsed Laser Deposition Methods Made Aluminum Doped ZnO Conductive Films. International Journal of Materials Science and Applications, 4(5), 364-367. https://doi.org/10.11648/j.ijmsa.20150405.23

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ACS Style

Shuang Liu; Wei Wang. Pulsed Laser Deposition Methods Made Aluminum Doped ZnO Conductive Films. Int. J. Mater. Sci. Appl. 2015, 4(5), 364-367. doi: 10.11648/j.ijmsa.20150405.23

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AMA Style

Shuang Liu, Wei Wang. Pulsed Laser Deposition Methods Made Aluminum Doped ZnO Conductive Films. Int J Mater Sci Appl. 2015;4(5):364-367. doi: 10.11648/j.ijmsa.20150405.23

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@article{10.11648/j.ijmsa.20150405.23,
  author = {Shuang Liu and Wei Wang},
  title = {Pulsed Laser Deposition Methods Made Aluminum Doped ZnO Conductive Films},
  journal = {International Journal of Materials Science and Applications},
  volume = {4},
  number = {5},
  pages = {364-367},
  doi = {10.11648/j.ijmsa.20150405.23},
  url = {https://doi.org/10.11648/j.ijmsa.20150405.23},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20150405.23},
  abstract = {Zinc Oxide is a novel semiconductor compound of II-VI group of the 3.37eV band gap. At room temperature, its exciton binding energy is 60 meV, which is one of the most potential light emitting devices in the field of ultraviolet. This experiment, using pulsed laser deposition, prepareing ZnO conductive films doping Al2O3 on silicon substrates and adopting ZnO waler, sintered, with Al2O3 as the target material, studies the influence of the dopant amount of alumina on thin film electrical conductivity and film crystallization conditions. The result shows: The thin film prepared by pulsed laser deposition method is mixed evenly, easy to control. Moreover, when the doping quantity of Al2O3 is 3.5%, the ZnO thin film has the least resistance rate and its crystallization is in the best condition.},
 year = {2015}
}

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TY  - JOUR
T1  - Pulsed Laser Deposition Methods Made Aluminum Doped ZnO Conductive Films
AU  - Shuang Liu
AU  - Wei Wang
Y1  - 2015/12/01
PY  - 2015
N1  - https://doi.org/10.11648/j.ijmsa.20150405.23
DO  - 10.11648/j.ijmsa.20150405.23
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 364
EP  - 367
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20150405.23
AB  - Zinc Oxide is a novel semiconductor compound of II-VI group of the 3.37eV band gap. At room temperature, its exciton binding energy is 60 meV, which is one of the most potential light emitting devices in the field of ultraviolet. This experiment, using pulsed laser deposition, prepareing ZnO conductive films doping Al2O3 on silicon substrates and adopting ZnO waler, sintered, with Al2O3 as the target material, studies the influence of the dopant amount of alumina on thin film electrical conductivity and film crystallization conditions. The result shows: The thin film prepared by pulsed laser deposition method is mixed evenly, easy to control. Moreover, when the doping quantity of Al2O3 is 3.5%, the ZnO thin film has the least resistance rate and its crystallization is in the best condition.
VL  - 4
IS  - 5
ER  -

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Author Information

Shuang Liu

School of Science, Shenyang University of Technology, Shenyang, China
Wei Wang

School of Science, Shenyang University of Technology, Shenyang, China

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APA Style

Shuang Liu, Wei Wang. (2015). Pulsed Laser Deposition Methods Made Aluminum Doped ZnO Conductive Films. International Journal of Materials Science and Applications, 4(5), 364-367. https://doi.org/10.11648/j.ijmsa.20150405.23

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ACS Style

Shuang Liu; Wei Wang. Pulsed Laser Deposition Methods Made Aluminum Doped ZnO Conductive Films. Int. J. Mater. Sci. Appl. 2015, 4(5), 364-367. doi: 10.11648/j.ijmsa.20150405.23

Copy | Download

AMA Style

Shuang Liu, Wei Wang. Pulsed Laser Deposition Methods Made Aluminum Doped ZnO Conductive Films. Int J Mater Sci Appl. 2015;4(5):364-367. doi: 10.11648/j.ijmsa.20150405.23

Copy | Download

@article{10.11648/j.ijmsa.20150405.23,
  author = {Shuang Liu and Wei Wang},
  title = {Pulsed Laser Deposition Methods Made Aluminum Doped ZnO Conductive Films},
  journal = {International Journal of Materials Science and Applications},
  volume = {4},
  number = {5},
  pages = {364-367},
  doi = {10.11648/j.ijmsa.20150405.23},
  url = {https://doi.org/10.11648/j.ijmsa.20150405.23},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20150405.23},
  abstract = {Zinc Oxide is a novel semiconductor compound of II-VI group of the 3.37eV band gap. At room temperature, its exciton binding energy is 60 meV, which is one of the most potential light emitting devices in the field of ultraviolet. This experiment, using pulsed laser deposition, prepareing ZnO conductive films doping Al2O3 on silicon substrates and adopting ZnO waler, sintered, with Al2O3 as the target material, studies the influence of the dopant amount of alumina on thin film electrical conductivity and film crystallization conditions. The result shows: The thin film prepared by pulsed laser deposition method is mixed evenly, easy to control. Moreover, when the doping quantity of Al2O3 is 3.5%, the ZnO thin film has the least resistance rate and its crystallization is in the best condition.},
 year = {2015}
}

Copy | Download

TY  - JOUR
T1  - Pulsed Laser Deposition Methods Made Aluminum Doped ZnO Conductive Films
AU  - Shuang Liu
AU  - Wei Wang
Y1  - 2015/12/01
PY  - 2015
N1  - https://doi.org/10.11648/j.ijmsa.20150405.23
DO  - 10.11648/j.ijmsa.20150405.23
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 364
EP  - 367
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20150405.23
AB  - Zinc Oxide is a novel semiconductor compound of II-VI group of the 3.37eV band gap. At room temperature, its exciton binding energy is 60 meV, which is one of the most potential light emitting devices in the field of ultraviolet. This experiment, using pulsed laser deposition, prepareing ZnO conductive films doping Al2O3 on silicon substrates and adopting ZnO waler, sintered, with Al2O3 as the target material, studies the influence of the dopant amount of alumina on thin film electrical conductivity and film crystallization conditions. The result shows: The thin film prepared by pulsed laser deposition method is mixed evenly, easy to control. Moreover, when the doping quantity of Al2O3 is 3.5%, the ZnO thin film has the least resistance rate and its crystallization is in the best condition.
VL  - 4
IS  - 5
ER  -

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