I studied the nanocrystalline silicon thin films by means of photoluminescent spectroscopy, Raman spectroscopy and Fourier-transformed infrared spectroscopy technique. The chemical bonding properties was studied by using the Fourier-transformed infrared spectroscopy in the range from500 cm-1 to 2300 cm-1. Spectral peak at wave number of 1100 cm-1 is related to the Si-O-Si bonding configuration. Hydrogenation of film can be estimated by using spectral lines at 2100 cm-1 and 2080 cm-1. The Si-O dipoles which are located into silicon film play great role because of electron affinity for oxygen. Photoluminescent (PL) properties are significant for the films which were made by using hydrogenation of silicon. Fourier-transformed infrared spectra of film’s absorption show the changes in chemicals in the film: from the oxygen incorporation into silicon to the elimination the Si-O bonding by adding the silicon tetra fluoride into electrochemical reactor, and increasing the Si-F density of bonds. The dissociation of SiF4 molecule causes the appearance of fluorine on the film surface, but the hydrogen atoms react with fluorine and excess fluorine is removed. By increase of SiF4 flow rate, the Si-O-Si bridges were etched by HF acid. The size effect in PL from nanocrystalline silicon film can be explained by means of statistical method. We suggested that the ƒ(x) is distribution function of crystallites in their sizes, θ(x) is a quantum efficiency of nanocrystals. Accordingly, the quantity of emitted hydrogenizednanocrystals by band-to-band radiative transitions is important to estimate the PL linear optical response. The processing of grown hydrogeneited silicon nanocrystalline film by annealing and etching the oxides results in preparation of fully crystallized silicon film for manufacturingthe photonic devices with significant quantum yield.
| Published in | American Journal of Nanosciences (Volume 3, Issue 3) |
| DOI | 10.11648/j.ajn.20170303.12 |
| Page(s) | 39-46 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2017. Published by Science Publishing Group |
Photoluminescent Properties, Raman Spectra, Fourier-Transformed Infrared Spectra, Silicon Nanocrystals, Silicon Film Morphology
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APA Style
Dmitry Evgenyevich Milovzorov. (2017). Fully Crystallized Silicon Nanostructured Film Prepared at Low Temperatures by Plasma-Enhanced Chemical Vapor Deposition. American Journal of Nanosciences, 3(3), 39-46. https://doi.org/10.11648/j.ajn.20170303.12
ACS Style
Dmitry Evgenyevich Milovzorov. Fully Crystallized Silicon Nanostructured Film Prepared at Low Temperatures by Plasma-Enhanced Chemical Vapor Deposition. Am. J. Nanosci. 2017, 3(3), 39-46. doi: 10.11648/j.ajn.20170303.12
AMA Style
Dmitry Evgenyevich Milovzorov. Fully Crystallized Silicon Nanostructured Film Prepared at Low Temperatures by Plasma-Enhanced Chemical Vapor Deposition. Am J Nanosci. 2017;3(3):39-46. doi: 10.11648/j.ajn.20170303.12
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Download@article{10.11648/j.ajn.20170303.12,
author = {Dmitry Evgenyevich Milovzorov},
title = {Fully Crystallized Silicon Nanostructured Film Prepared at Low Temperatures by Plasma-Enhanced Chemical Vapor Deposition},
journal = {American Journal of Nanosciences},
volume = {3},
number = {3},
pages = {39-46},
doi = {10.11648/j.ajn.20170303.12},
url = {https://doi.org/10.11648/j.ajn.20170303.12},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajn.20170303.12},
abstract = {I studied the nanocrystalline silicon thin films by means of photoluminescent spectroscopy, Raman spectroscopy and Fourier-transformed infrared spectroscopy technique. The chemical bonding properties was studied by using the Fourier-transformed infrared spectroscopy in the range from500 cm-1 to 2300 cm-1. Spectral peak at wave number of 1100 cm-1 is related to the Si-O-Si bonding configuration. Hydrogenation of film can be estimated by using spectral lines at 2100 cm-1 and 2080 cm-1. The Si-O dipoles which are located into silicon film play great role because of electron affinity for oxygen. Photoluminescent (PL) properties are significant for the films which were made by using hydrogenation of silicon. Fourier-transformed infrared spectra of film’s absorption show the changes in chemicals in the film: from the oxygen incorporation into silicon to the elimination the Si-O bonding by adding the silicon tetra fluoride into electrochemical reactor, and increasing the Si-F density of bonds. The dissociation of SiF4 molecule causes the appearance of fluorine on the film surface, but the hydrogen atoms react with fluorine and excess fluorine is removed. By increase of SiF4 flow rate, the Si-O-Si bridges were etched by HF acid. The size effect in PL from nanocrystalline silicon film can be explained by means of statistical method. We suggested that the ƒ(x) is distribution function of crystallites in their sizes, θ(x) is a quantum efficiency of nanocrystals. Accordingly, the quantity of emitted hydrogenizednanocrystals by band-to-band radiative transitions is important to estimate the PL linear optical response. The processing of grown hydrogeneited silicon nanocrystalline film by annealing and etching the oxides results in preparation of fully crystallized silicon film for manufacturingthe photonic devices with significant quantum yield.},
year = {2017}
}
TY - JOUR T1 - Fully Crystallized Silicon Nanostructured Film Prepared at Low Temperatures by Plasma-Enhanced Chemical Vapor Deposition AU - Dmitry Evgenyevich Milovzorov Y1 - 2017/07/14 PY - 2017 N1 - https://doi.org/10.11648/j.ajn.20170303.12 DO - 10.11648/j.ajn.20170303.12 T2 - American Journal of Nanosciences JF - American Journal of Nanosciences JO - American Journal of Nanosciences SP - 39 EP - 46 PB - Science Publishing Group SN - 2575-4858 UR - https://doi.org/10.11648/j.ajn.20170303.12 AB - I studied the nanocrystalline silicon thin films by means of photoluminescent spectroscopy, Raman spectroscopy and Fourier-transformed infrared spectroscopy technique. The chemical bonding properties was studied by using the Fourier-transformed infrared spectroscopy in the range from500 cm-1 to 2300 cm-1. Spectral peak at wave number of 1100 cm-1 is related to the Si-O-Si bonding configuration. Hydrogenation of film can be estimated by using spectral lines at 2100 cm-1 and 2080 cm-1. The Si-O dipoles which are located into silicon film play great role because of electron affinity for oxygen. Photoluminescent (PL) properties are significant for the films which were made by using hydrogenation of silicon. Fourier-transformed infrared spectra of film’s absorption show the changes in chemicals in the film: from the oxygen incorporation into silicon to the elimination the Si-O bonding by adding the silicon tetra fluoride into electrochemical reactor, and increasing the Si-F density of bonds. The dissociation of SiF4 molecule causes the appearance of fluorine on the film surface, but the hydrogen atoms react with fluorine and excess fluorine is removed. By increase of SiF4 flow rate, the Si-O-Si bridges were etched by HF acid. The size effect in PL from nanocrystalline silicon film can be explained by means of statistical method. We suggested that the ƒ(x) is distribution function of crystallites in their sizes, θ(x) is a quantum efficiency of nanocrystals. Accordingly, the quantity of emitted hydrogenizednanocrystals by band-to-band radiative transitions is important to estimate the PL linear optical response. The processing of grown hydrogeneited silicon nanocrystalline film by annealing and etching the oxides results in preparation of fully crystallized silicon film for manufacturingthe photonic devices with significant quantum yield. VL - 3 IS - 3 ER -
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