Influence of Elastic Deformations and Temperature on the Tensoresistive Properties of the Compound TlIn1-xCоxSe2 (0 ≤ X ≤ 0.5)

Umarov Salim Hallokovich; Hallokov Farhod Karimovich; Narzullaeva Zilola Mukhitdinovna

doi:doi:10.11648/j.ajmp.20221104.11

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Influence of Elastic Deformations and Temperature on the Tensoresistive Properties of the Compound TlIn_1-xCо_xSe₂ (0 ≤ X ≤ 0.5)

Umarov Salim Hallokovich, Hallokov Farhod Karimovich, Narzullaeva Zilola Mukhitdinovna

Published in American Journal of Modern Physics (Volume 11, Issue 4)

Received: 18 February 2022 Accepted: 12 March 2022 Published: 26 July 2022

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Abstract

The paper presents the results of studying the influence of various external physical factors, including elastic deformations and temperature, on the tensoresistive mechanisms of single crystals of solid solutions TlIn_1-xCо_xSe₂ (0 ≤ х ≤ 0.5). The effect of temperature on the strain sensitivity of TlIn_1-xCo_xSe₂ single crystals in the cobalt concentration range 0 ≤ x ≤ 0.5 was determined. A mode of synthesis and growth of single crystals of solid solutions TlIn_1-xCo_xSe₂ (0 ≤ x ≤ 0.5) by the improved Bridgman-Stockbarger method with the use of electronic temperature controllers was developed to maintain the optimal thermal regime during crystallization. The directional crystallization rate was about 0.9 mm/h. TlIn_1-xCo_xSe₂ single crystals had p-type conductivity. The samples for the study were made by cleaving single crystals in two mutually perpendicular planes of a natural cleavage and had the shape of a rectangular parallelepiped. The dimensions of the studied samples were 10x10x0.25 mm³. Ohmic contacts are obtained by spot welding of the corresponding wires (ø = 0.01 mm) by a capacitor discharge on the ends of samples heated in an inert gas flow. A technique has been developed for strain gauge measurements in a static mode at a temperature of 300–400 K. The study of tensoresistive mechanisms of TlIn_1-xCo_xSe₂ solid solution single crystals has led to very interesting results. First of all, it should be emphasized that these crystals exhibit a strong piezoresistive effect in the direction of the [001] crystallographic axis, which, in combination with their mechanical, elastic, crystallographic and other features, makes them very promising materials for creating new miniature highly sensitive and reliable electromechanical transducers.

Published in	American Journal of Modern Physics (Volume 11, Issue 4)
DOI	10.11648/j.ajmp.20221104.11
Page(s)	67-70
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Monocrystals, Tenzoresistive Characteristics, Solid Solutions, Tenzosensitivity of Crystals, Electromechanical Transformers

References

[1]	Umarov S. Kh. Synthesis and growth of single crystals of solid solutions TlInS₂xSe₂(1-x) (0 ≤x ≤ 1). // Prеprint № 657 IYaF AN RUz.– Tashkеnt, 2003. – S. 9.
[2]	Godjaеv E. M., Djafarova S. R., Gyulmamеdov K. D., Mamеdov E. M., Osmanova S. S. Synthesis and growth of TlInSe₂ and TlGaSe₂ single crystals. // Izvеstiya RAN, Nеorganichеskiе matеriali. – Moskva, 2009. – .45, № 7, – S. 790-792.
[3]	Bekir Gürbulak, Cevdet Coşkun, Seydi Doğan, Aytunç Ateş, Yahya Kemal Yoğurtçu. The Growth of p-Type A^III B^III C₂^VI Single Crystals // Turkish Journal of Physics. – Ankara, 2000. – No. 24. 29-38.
[4]	Umarov S. Kh. On the method of strain gauge measurements in static mode - Т.: 1992. 9 p. – Dеp. V Uz NIINTI 16. 04. 1992. № 1209-Uz 9.
[5]	Umarov S. Kh. Influence of the structure, composition and external influences on the optical, electrophysical and photoelectric features of single crystals of solid solutions of the TlInS₂ - TlInSe₂ system. Diss. for the degree of Ph.D. Phys.-Math. Sciences. Tashkent, 2004, 246 p.
[6]	S. Kh. Umarov, I. Nuritdinjv, Zh. Dzh. Ashurov, and F. Rh. Rhallokov. Single Crystals of TlIn_1-xCo_xSe₂ (0 ≤ x ≤ 0.5) Solid Solutions As Effective Materials for Semiconductor Tensometry. // Technikal Physics Letters, 2017, Vol. 43, № 8, 731-733.
[7]	S. Kh. Umarov, I. Nuritdinjv, Zh. Dzh. Ashurov Tensoresistive properties of solid solutions TlIn_1-xCo_xSe₂. // promising materials. - Moscow, 2007. – № 3. – P. 24-26.
[8]	I. Nuritdinjv, Zh. Dzh. Ashurov, S. Kh. Umarov. Resistivity and tensoresistive characteristics of TlIn1 – xCoxSe₂ solid solution crystals. // Materials of the scientific-practical Republican conference with international participation "Actual problems of teaching Physics". – Namangan, 2018. – С. 69-72.
[9]	Grigas J., Talik E., Adamiec M., Lazauskas V., Nelkinas V. XPS and Electronic Strukture of TlInSe₂.// Lithuanian Jornal of Physics, 2007, V. 47, No 1, 87-95.
[10]	Shamirzayev S. X., Mukhammediev E. D., and others. Tensoresistive structure of heterogeneous materials. //Preprint №. 140 - 90 - FTP. Tashkent. 1990. - 15 p.
[11]	Muller D., Eulenberger G., Hahn H. Uber ternare thallium-chalkogenidemit thalliumselenidestructures // Zeitschrift für anorganische und allgemeine Chemie. – Berlin, 1973, No 398, 207-220.
[12]	Lizarraga R., Ronneteg S., Berger R., Mohn P., Nordstrom L., Eriksson O. On the magnetic structure of TlCo₂Se₂ // Journal of Magnetism and Magnetic Materials, Elsevier, 2004, 557-558.
[13]	Pikus G. E. Symmetry and deformation effects in semiconductors. Moscow: Nauka, 1973. - 548 p.

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Umarov Salim Hallokovich, Hallokov Farhod Karimovich, Narzullaeva Zilola Mukhitdinovna. (2022). Influence of Elastic Deformations and Temperature on the Tensoresistive Properties of the Compound TlIn1-xCоxSe2 (0 ≤ X ≤ 0.5). American Journal of Modern Physics, 11(4), 67-70. https://doi.org/10.11648/j.ajmp.20221104.11

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Umarov Salim Hallokovich; Hallokov Farhod Karimovich; Narzullaeva Zilola Mukhitdinovna. Influence of Elastic Deformations and Temperature on the Tensoresistive Properties of the Compound TlIn1-xCоxSe2 (0 ≤ X ≤ 0.5). Am. J. Mod. Phys. 2022, 11(4), 67-70. doi: 10.11648/j.ajmp.20221104.11

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AMA Style

Umarov Salim Hallokovich, Hallokov Farhod Karimovich, Narzullaeva Zilola Mukhitdinovna. Influence of Elastic Deformations and Temperature on the Tensoresistive Properties of the Compound TlIn1-xCоxSe2 (0 ≤ X ≤ 0.5). Am J Mod Phys. 2022;11(4):67-70. doi: 10.11648/j.ajmp.20221104.11

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@article{10.11648/j.ajmp.20221104.11,
  author = {Umarov Salim Hallokovich and Hallokov Farhod Karimovich and Narzullaeva Zilola Mukhitdinovna},
  title = {Influence of Elastic Deformations and Temperature on the Tensoresistive Properties of the Compound TlIn1-xCоxSe2 (0 ≤ X ≤ 0.5)},
  journal = {American Journal of Modern Physics},
  volume = {11},
  number = {4},
  pages = {67-70},
  doi = {10.11648/j.ajmp.20221104.11},
  url = {https://doi.org/10.11648/j.ajmp.20221104.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajmp.20221104.11},
  abstract = {The paper presents the results of studying the influence of various external physical factors, including elastic deformations and temperature, on the tensoresistive mechanisms of single crystals of solid solutions TlIn1-xCоxSe2 (0 ≤ х ≤ 0.5). The effect of temperature on the strain sensitivity of TlIn1-xCoxSe2 single crystals in the cobalt concentration range 0 ≤ x ≤ 0.5 was determined. A mode of synthesis and growth of single crystals of solid solutions TlIn1-xCoxSe2 (0 ≤ x ≤ 0.5) by the improved Bridgman-Stockbarger method with the use of electronic temperature controllers was developed to maintain the optimal thermal regime during crystallization. The directional crystallization rate was about 0.9 mm/h. TlIn1-xCoxSe2 single crystals had p-type conductivity. The samples for the study were made by cleaving single crystals in two mutually perpendicular planes of a natural cleavage and had the shape of a rectangular parallelepiped. The dimensions of the studied samples were 10x10x0.25 mm3. Ohmic contacts are obtained by spot welding of the corresponding wires (ø = 0.01 mm) by a capacitor discharge on the ends of samples heated in an inert gas flow. A technique has been developed for strain gauge measurements in a static mode at a temperature of 300–400 K. The study of tensoresistive mechanisms of TlIn1-xCoxSe2 solid solution single crystals has led to very interesting results. First of all, it should be emphasized that these crystals exhibit a strong piezoresistive effect in the direction of the [001] crystallographic axis, which, in combination with their mechanical, elastic, crystallographic and other features, makes them very promising materials for creating new miniature highly sensitive and reliable electromechanical transducers.},
 year = {2022}
}

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TY  - JOUR
T1  - Influence of Elastic Deformations and Temperature on the Tensoresistive Properties of the Compound TlIn1-xCоxSe2 (0 ≤ X ≤ 0.5)
AU  - Umarov Salim Hallokovich
AU  - Hallokov Farhod Karimovich
AU  - Narzullaeva Zilola Mukhitdinovna
Y1  - 2022/07/26
PY  - 2022
N1  - https://doi.org/10.11648/j.ajmp.20221104.11
DO  - 10.11648/j.ajmp.20221104.11
T2  - American Journal of Modern Physics
JF  - American Journal of Modern Physics
JO  - American Journal of Modern Physics
SP  - 67
EP  - 70
PB  - Science Publishing Group
SN  - 2326-8891
UR  - https://doi.org/10.11648/j.ajmp.20221104.11
AB  - The paper presents the results of studying the influence of various external physical factors, including elastic deformations and temperature, on the tensoresistive mechanisms of single crystals of solid solutions TlIn1-xCоxSe2 (0 ≤ х ≤ 0.5). The effect of temperature on the strain sensitivity of TlIn1-xCoxSe2 single crystals in the cobalt concentration range 0 ≤ x ≤ 0.5 was determined. A mode of synthesis and growth of single crystals of solid solutions TlIn1-xCoxSe2 (0 ≤ x ≤ 0.5) by the improved Bridgman-Stockbarger method with the use of electronic temperature controllers was developed to maintain the optimal thermal regime during crystallization. The directional crystallization rate was about 0.9 mm/h. TlIn1-xCoxSe2 single crystals had p-type conductivity. The samples for the study were made by cleaving single crystals in two mutually perpendicular planes of a natural cleavage and had the shape of a rectangular parallelepiped. The dimensions of the studied samples were 10x10x0.25 mm3. Ohmic contacts are obtained by spot welding of the corresponding wires (ø = 0.01 mm) by a capacitor discharge on the ends of samples heated in an inert gas flow. A technique has been developed for strain gauge measurements in a static mode at a temperature of 300–400 K. The study of tensoresistive mechanisms of TlIn1-xCoxSe2 solid solution single crystals has led to very interesting results. First of all, it should be emphasized that these crystals exhibit a strong piezoresistive effect in the direction of the [001] crystallographic axis, which, in combination with their mechanical, elastic, crystallographic and other features, makes them very promising materials for creating new miniature highly sensitive and reliable electromechanical transducers.
VL  - 11
IS  - 4
ER  -

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Author Information

Umarov Salim Hallokovich

Department of “Biophysics”, Bukhara State Medical Institute, Bukhara, Uzbekistan
Hallokov Farhod Karimovich

Department of “Biophysics”, Bukhara State Medical Institute, Bukhara, Uzbekistan
Narzullaeva Zilola Mukhitdinovna

Department of “Biophysics”, Bukhara State Medical Institute, Bukhara, Uzbekistan

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APA Style

Umarov Salim Hallokovich, Hallokov Farhod Karimovich, Narzullaeva Zilola Mukhitdinovna. (2022). Influence of Elastic Deformations and Temperature on the Tensoresistive Properties of the Compound TlIn1-xCоxSe2 (0 ≤ X ≤ 0.5). American Journal of Modern Physics, 11(4), 67-70. https://doi.org/10.11648/j.ajmp.20221104.11

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ACS Style

Umarov Salim Hallokovich; Hallokov Farhod Karimovich; Narzullaeva Zilola Mukhitdinovna. Influence of Elastic Deformations and Temperature on the Tensoresistive Properties of the Compound TlIn1-xCоxSe2 (0 ≤ X ≤ 0.5). Am. J. Mod. Phys. 2022, 11(4), 67-70. doi: 10.11648/j.ajmp.20221104.11

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AMA Style

Umarov Salim Hallokovich, Hallokov Farhod Karimovich, Narzullaeva Zilola Mukhitdinovna. Influence of Elastic Deformations and Temperature on the Tensoresistive Properties of the Compound TlIn1-xCоxSe2 (0 ≤ X ≤ 0.5). Am J Mod Phys. 2022;11(4):67-70. doi: 10.11648/j.ajmp.20221104.11

Copy | Download

@article{10.11648/j.ajmp.20221104.11,
  author = {Umarov Salim Hallokovich and Hallokov Farhod Karimovich and Narzullaeva Zilola Mukhitdinovna},
  title = {Influence of Elastic Deformations and Temperature on the Tensoresistive Properties of the Compound TlIn1-xCоxSe2 (0 ≤ X ≤ 0.5)},
  journal = {American Journal of Modern Physics},
  volume = {11},
  number = {4},
  pages = {67-70},
  doi = {10.11648/j.ajmp.20221104.11},
  url = {https://doi.org/10.11648/j.ajmp.20221104.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajmp.20221104.11},
  abstract = {The paper presents the results of studying the influence of various external physical factors, including elastic deformations and temperature, on the tensoresistive mechanisms of single crystals of solid solutions TlIn1-xCоxSe2 (0 ≤ х ≤ 0.5). The effect of temperature on the strain sensitivity of TlIn1-xCoxSe2 single crystals in the cobalt concentration range 0 ≤ x ≤ 0.5 was determined. A mode of synthesis and growth of single crystals of solid solutions TlIn1-xCoxSe2 (0 ≤ x ≤ 0.5) by the improved Bridgman-Stockbarger method with the use of electronic temperature controllers was developed to maintain the optimal thermal regime during crystallization. The directional crystallization rate was about 0.9 mm/h. TlIn1-xCoxSe2 single crystals had p-type conductivity. The samples for the study were made by cleaving single crystals in two mutually perpendicular planes of a natural cleavage and had the shape of a rectangular parallelepiped. The dimensions of the studied samples were 10x10x0.25 mm3. Ohmic contacts are obtained by spot welding of the corresponding wires (ø = 0.01 mm) by a capacitor discharge on the ends of samples heated in an inert gas flow. A technique has been developed for strain gauge measurements in a static mode at a temperature of 300–400 K. The study of tensoresistive mechanisms of TlIn1-xCoxSe2 solid solution single crystals has led to very interesting results. First of all, it should be emphasized that these crystals exhibit a strong piezoresistive effect in the direction of the [001] crystallographic axis, which, in combination with their mechanical, elastic, crystallographic and other features, makes them very promising materials for creating new miniature highly sensitive and reliable electromechanical transducers.},
 year = {2022}
}

Copy | Download

TY  - JOUR
T1  - Influence of Elastic Deformations and Temperature on the Tensoresistive Properties of the Compound TlIn1-xCоxSe2 (0 ≤ X ≤ 0.5)
AU  - Umarov Salim Hallokovich
AU  - Hallokov Farhod Karimovich
AU  - Narzullaeva Zilola Mukhitdinovna
Y1  - 2022/07/26
PY  - 2022
N1  - https://doi.org/10.11648/j.ajmp.20221104.11
DO  - 10.11648/j.ajmp.20221104.11
T2  - American Journal of Modern Physics
JF  - American Journal of Modern Physics
JO  - American Journal of Modern Physics
SP  - 67
EP  - 70
PB  - Science Publishing Group
SN  - 2326-8891
UR  - https://doi.org/10.11648/j.ajmp.20221104.11
AB  - The paper presents the results of studying the influence of various external physical factors, including elastic deformations and temperature, on the tensoresistive mechanisms of single crystals of solid solutions TlIn1-xCоxSe2 (0 ≤ х ≤ 0.5). The effect of temperature on the strain sensitivity of TlIn1-xCoxSe2 single crystals in the cobalt concentration range 0 ≤ x ≤ 0.5 was determined. A mode of synthesis and growth of single crystals of solid solutions TlIn1-xCoxSe2 (0 ≤ x ≤ 0.5) by the improved Bridgman-Stockbarger method with the use of electronic temperature controllers was developed to maintain the optimal thermal regime during crystallization. The directional crystallization rate was about 0.9 mm/h. TlIn1-xCoxSe2 single crystals had p-type conductivity. The samples for the study were made by cleaving single crystals in two mutually perpendicular planes of a natural cleavage and had the shape of a rectangular parallelepiped. The dimensions of the studied samples were 10x10x0.25 mm3. Ohmic contacts are obtained by spot welding of the corresponding wires (ø = 0.01 mm) by a capacitor discharge on the ends of samples heated in an inert gas flow. A technique has been developed for strain gauge measurements in a static mode at a temperature of 300–400 K. The study of tensoresistive mechanisms of TlIn1-xCoxSe2 solid solution single crystals has led to very interesting results. First of all, it should be emphasized that these crystals exhibit a strong piezoresistive effect in the direction of the [001] crystallographic axis, which, in combination with their mechanical, elastic, crystallographic and other features, makes them very promising materials for creating new miniature highly sensitive and reliable electromechanical transducers.
VL  - 11
IS  - 4
ER  -

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