In this special issue, we would like to invite manuscripts based on recent advances in ferroelectric materials at nanoscale. The nanoscale ferroelectricity has wide applications in memory devices at much lower power consumption compared to their magnetism based counterparts. It includes the synthesis of new ferroelectric materials either in thin film structures, or nanoparticles, nanomaterials etc. which may possess sharp ferroelectric switching at low coercive electric fields (preferably less than few hundred kV). The ferroelectrics based on complex oxides will be preferred as they are robust in ambient conditions for application prospectus, however, other innovative class of materials will also be welcomed. The objective of this issue is to address the recent trends in- (1) ferroelectric material synthesis and characterization, (2) to explore the possibility of their application in electronic device manufacturing industry, (3) understanding their physics, switching properties etc., (4) durability, robustness etc. We hope, with this aim, the readers will get a comprehensive overview of the opportunities and challenges of electric current driven memory devices and their future prospects.

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