American Journal of Nano Research and Applications

Special Issue

Recent Advances of Nanomaterials and Devices

  • Submission Deadline: Oct. 10, 2020
  • Status: Submission Closed
  • Lead Guest Editor: Ahmed Nahhas
About This Special Issue
This special issue focuses on the recent advances of the Zinc oxide and Gallium nitride based nanomaterials and devices including the recent advances of fabrication, processing, and applications. The special issue also includes the recent Challenges and Perspectives.

Aims and Scope:

  1. Zinc oxide (ZnO) and Gallium nitride (GaN) Nanomaterials
  2. Nanowires, nanorods, Nanotubes, Nanoparticles, nanobelts and quantum dots
  3. Synthesis, characterization and manipulation of ZnO and GaN nanomaterials and nanostructures
  4. Doping issues of ZnO and GaN nanostructures
  5. ZnO and GaN based Nanodevices
  6. Modeling and simulations of ZnO and GaN nanostructures
  7. Recent Challenges of ZnO and GaN Nanodevices
  8. Fabrication characterization techniques of ZnO and GaN
Lead Guest Editor
  • Ahmed Nahhas

    Umm Al Qura University, Mecca, Saudi Arabia

Guest Editors
  • Mohamed Ali Belaid

    SAGE-ENISO,, Av. Rime, Saudi Arabia

  • Abdessattar Bouzid

    Umm Al Qura University, Mecca, Saudi Arabia

  • Mohammed Jhanger

    Umm Al Qura University, Mecca, Saudi Arabia

  • Imran Mirza

    Umm Al Qura University, Mecca, Saudi Arabia

  • Mohammed Adel

    Umm Al Qura University, Mecca, Saudi Arabia

  • Arti Sharma

    School Of Physics, DAVV, Indore, India

  • Sadegh Yousefi

    Semnan University, Semnan, Iran

Published Articles
  • High Responsivity Ultraviolet Photoconductors Based on Epitaxial ZnO Thin Films

    Ahmed Mohammed Nahhas

    Issue: Volume 7, Issue 1, March 2019
    Pages: 6-10
    Received: Jul. 19, 2019
    Accepted: Jul. 31, 2019
    Published: Sep. 02, 2019
    DOI: 10.11648/j.nano.20190701.12
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    Abstract: In this paper, ultraviolet (UV) detection properties of epitaxial ZnO films grown on sapphire substrates with radio-frequency magnetron sputtering is reported. The responsivity (R) of the ZnO photoconductors measured at 325 nm wavelength shows a strong dependence on the incident power (P), i.e., R µ P-k (k = 0.7). A responsivity of 3500 A/W (or a g... Show More