Scrutiny of Leakage Currents with Insulating Materials for Transistor Applications
Continuous reducing the size of transistor technology has enabled extraordinary improvements in the switching speed, density, functionality and cost of microprocessors. Integrated Circuit industry is pursuing Moore’s curve down to deep-nanoscale dimensions. Advanced transistor technology now faces many challenges that together result in static power consumption due to leakage currents. In fact, leakage currents are responsible for more than 50% of the total power consumption in nanoscale designs. In deep-nanoscale arena, this percentage will increase further. However, diagnosing of the interface quality and interaction between insulators and semiconductors is significant to reduce the leakage current and achieve the high performance of switching devices in the nanoscale domain. Continuous scaling down has required drastic decreases of the SiO2 dielectric film thickness to achieve ever-higher capacitance densities. Fundamental limits of SiO2 as a dielectric material, imposed by electron tunneling, will be reached as this SiO2 film thickness approaches ~1nm. Therefore, alternate high-k interlayer dielectric material will be needed to replace SiO2 as a capacitor and gate dielectric material. Numerous alternate high-k materials are being actively investigated, ranging from Al2O3 (k ~ 9) to HfO2 (k ~ 25). High-k materials hold the promise of achieving very high capacitance densities with relatively thick films.
Muhammad Sana Ullah,
Scrutiny of Leakage Currents with Insulating Materials for Transistor Applications, International Journal of Materials Science and Applications.
Vol. 7, No. 5,
2018, pp. 167-173.
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