Investigation of Positron Annihilation Diffusion Length in Gallium Nitride

Abdulnasser Sagr Saleh; Awla Moftah Elhasi

doi:doi:10.11648/j.ajmp.20140301.15

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Investigation of Positron Annihilation Diffusion Length in Gallium Nitride

Abdulnasser Sagr Saleh, Awla Moftah Elhasi

Received: 12 December 2013 Accepted: Published: 10 January 2014

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Abstract

A number of authors reported values for positron diffusion length in Gallium nitride less than 60 nm where the expected values in semiconductors are in the range of 200 nm to 300 nm. As these values are usually obtained from fitting a theoretical diffusion model to experimental Doppler broadening results, a possibility of fitting errors exist. In this study, positron annihilation experimental results for two MBE Gallium nitride samples are used to determine diffusion length. Several models are examined and fitted to the data in order to find reasons behind such short values. The study concluded to rule out errors in theoretical fittings, confirmed the shortness and owed the shortness to trapping of positrons by line defects which have high density in this material.

DOI	10.11648/j.ajmp.20140301.15
Published in	American Journal of Modern Physics (Volume 3, Issue 1, January 2014)
Page(s)	24-28
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Gallium Nitride, Diffusion Length, Defects, Positron Annihilation

References

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APA Style

Abdulnasser Sagr Saleh, Awla Moftah Elhasi. (2014). Investigation of Positron Annihilation Diffusion Length in Gallium Nitride. American Journal of Modern Physics, 3(1), 24-28. https://doi.org/10.11648/j.ajmp.20140301.15

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ACS Style

Abdulnasser Sagr Saleh; Awla Moftah Elhasi. Investigation of Positron Annihilation Diffusion Length in Gallium Nitride. Am. J. Mod. Phys. 2014, 3(1), 24-28. doi: 10.11648/j.ajmp.20140301.15

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AMA Style

Abdulnasser Sagr Saleh, Awla Moftah Elhasi. Investigation of Positron Annihilation Diffusion Length in Gallium Nitride. Am J Mod Phys. 2014;3(1):24-28. doi: 10.11648/j.ajmp.20140301.15

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@article{10.11648/j.ajmp.20140301.15,
  author = {Abdulnasser Sagr Saleh and Awla Moftah Elhasi},
  title = {Investigation of Positron Annihilation Diffusion Length in Gallium Nitride},
  journal = {American Journal of Modern Physics},
  volume = {3},
  number = {1},
  pages = {24-28},
  doi = {10.11648/j.ajmp.20140301.15},
  url = {https://doi.org/10.11648/j.ajmp.20140301.15},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajmp.20140301.15},
  abstract = {A number of authors reported values for positron diffusion length in Gallium nitride less than 60 nm where the expected values in semiconductors are in the range of 200 nm to 300 nm. As these values are usually obtained from fitting a theoretical diffusion model to experimental Doppler broadening results, a possibility of fitting errors exist. In this study, positron annihilation experimental results for two MBE Gallium nitride samples are used to determine diffusion length. Several models are examined and fitted to the data in order to find reasons behind such short values. The study concluded to rule out errors in theoretical fittings, confirmed the shortness and owed the shortness to trapping of positrons by line defects which have high density in this material.},
 year = {2014}
}

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TY  - JOUR
T1  - Investigation of Positron Annihilation Diffusion Length in Gallium Nitride
AU  - Abdulnasser Sagr Saleh
AU  - Awla Moftah Elhasi
Y1  - 2014/01/10
PY  - 2014
N1  - https://doi.org/10.11648/j.ajmp.20140301.15
DO  - 10.11648/j.ajmp.20140301.15
T2  - American Journal of Modern Physics
JF  - American Journal of Modern Physics
JO  - American Journal of Modern Physics
SP  - 24
EP  - 28
PB  - Science Publishing Group
SN  - 2326-8891
UR  - https://doi.org/10.11648/j.ajmp.20140301.15
AB  - A number of authors reported values for positron diffusion length in Gallium nitride less than 60 nm where the expected values in semiconductors are in the range of 200 nm to 300 nm. As these values are usually obtained from fitting a theoretical diffusion model to experimental Doppler broadening results, a possibility of fitting errors exist. In this study, positron annihilation experimental results for two MBE Gallium nitride samples are used to determine diffusion length. Several models are examined and fitted to the data in order to find reasons behind such short values. The study concluded to rule out errors in theoretical fittings, confirmed the shortness and owed the shortness to trapping of positrons by line defects which have high density in this material.
VL  - 3
IS  - 1
ER  -

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Author Information

Abdulnasser Sagr Saleh

Physics department, Faculty of Science, University of Benghazi, Benghazi, Libya
Awla Moftah Elhasi

Physics department, Faculty of Science, University of Benghazi, Benghazi, Libya

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APA Style

Abdulnasser Sagr Saleh, Awla Moftah Elhasi. (2014). Investigation of Positron Annihilation Diffusion Length in Gallium Nitride. American Journal of Modern Physics, 3(1), 24-28. https://doi.org/10.11648/j.ajmp.20140301.15

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ACS Style

Abdulnasser Sagr Saleh; Awla Moftah Elhasi. Investigation of Positron Annihilation Diffusion Length in Gallium Nitride. Am. J. Mod. Phys. 2014, 3(1), 24-28. doi: 10.11648/j.ajmp.20140301.15

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AMA Style

Abdulnasser Sagr Saleh, Awla Moftah Elhasi. Investigation of Positron Annihilation Diffusion Length in Gallium Nitride. Am J Mod Phys. 2014;3(1):24-28. doi: 10.11648/j.ajmp.20140301.15

Copy | Download

@article{10.11648/j.ajmp.20140301.15,
  author = {Abdulnasser Sagr Saleh and Awla Moftah Elhasi},
  title = {Investigation of Positron Annihilation Diffusion Length in Gallium Nitride},
  journal = {American Journal of Modern Physics},
  volume = {3},
  number = {1},
  pages = {24-28},
  doi = {10.11648/j.ajmp.20140301.15},
  url = {https://doi.org/10.11648/j.ajmp.20140301.15},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajmp.20140301.15},
  abstract = {A number of authors reported values for positron diffusion length in Gallium nitride less than 60 nm where the expected values in semiconductors are in the range of 200 nm to 300 nm. As these values are usually obtained from fitting a theoretical diffusion model to experimental Doppler broadening results, a possibility of fitting errors exist. In this study, positron annihilation experimental results for two MBE Gallium nitride samples are used to determine diffusion length. Several models are examined and fitted to the data in order to find reasons behind such short values. The study concluded to rule out errors in theoretical fittings, confirmed the shortness and owed the shortness to trapping of positrons by line defects which have high density in this material.},
 year = {2014}
}

Copy | Download

TY  - JOUR
T1  - Investigation of Positron Annihilation Diffusion Length in Gallium Nitride
AU  - Abdulnasser Sagr Saleh
AU  - Awla Moftah Elhasi
Y1  - 2014/01/10
PY  - 2014
N1  - https://doi.org/10.11648/j.ajmp.20140301.15
DO  - 10.11648/j.ajmp.20140301.15
T2  - American Journal of Modern Physics
JF  - American Journal of Modern Physics
JO  - American Journal of Modern Physics
SP  - 24
EP  - 28
PB  - Science Publishing Group
SN  - 2326-8891
UR  - https://doi.org/10.11648/j.ajmp.20140301.15
AB  - A number of authors reported values for positron diffusion length in Gallium nitride less than 60 nm where the expected values in semiconductors are in the range of 200 nm to 300 nm. As these values are usually obtained from fitting a theoretical diffusion model to experimental Doppler broadening results, a possibility of fitting errors exist. In this study, positron annihilation experimental results for two MBE Gallium nitride samples are used to determine diffusion length. Several models are examined and fitted to the data in order to find reasons behind such short values. The study concluded to rule out errors in theoretical fittings, confirmed the shortness and owed the shortness to trapping of positrons by line defects which have high density in this material.
VL  - 3
IS  - 1
ER  -

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