Analysis and Solution of Abnormal Fault of Data Storage Based on NAND-flash

Zhao Long; Shen Xiaohe; Chen Geng; Hu Xiaoxi

doi:doi:10.11648/j.sd.20200804.12

| Peer-Reviewed

Analysis and Solution of Abnormal Fault of Data Storage Based on NAND-flash

Zhao Long, Shen Xiaohe, Chen Geng, Hu Xiaoxi

Published in Science Discovery (Volume 8, Issue 4)

Received: 18 June 2020 Published: 25 August 2020

Views: Downloads:

Download PDF

Share This Article

Twitter
Linked In
Facebook

Abstract

NAND-flash memory has the advantages of large capacity and fast rewriting speed. It is suitable for the storage of large amounts of data and is often used as an online storage device for embedded products. However, NAND-flash has the problems of bad blocks and other insufficient reliability.In a certain aerospace model temperature/strain measurement system, the NAND-flash memory is erased and written through DSP software, and the strain/temperature measurement data collected by the sensor is stored in real time. After the system was powered on many times and completed data collection and decoding, it was found that the data stored in the NAND-flash had abnormal faults. By analyzing the test phenomenon and failure mechanism, the failure problem is attributed to the fact that the data in the NAND-flash is not erased, and it is coupled with the newly written data, and it is finally located because the data in the original data address cannot be effectively erased when the data address is stored. Coupling also occurred, resulting in an error in the data address, and the data was coupled after power-on again. Based on the above-mentioned reasons, this paper proposed a troubleshooting method and conducted a test. The verification was successfully passed and the problem was resolved.This method has high reference significance in the large-capacity and high-reliability data storage of NAND-flash in the field of aerospace models.

Published in	Science Discovery (Volume 8, Issue 4)
DOI	10.11648/j.sd.20200804.12
Page(s)	69-73
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2020. Published by Science Publishing Group

Keywords

NAND-flash, Data Exception, Fault Analysis

References

[1]	乔立岩，李元亨，王戈，等.一种NAND Flash坏块管理优化方法的实现[J]，电子测量技术，2015.07。
[2]	彭兵，步凯，徐欣，NAND Flash坏块管理研究[J]，微处理机，2009.02。
[3]	周军，NAND Flash的坏块管理设计[J]，单片机与嵌入式系统应用，2010.09。
[4]	舒文丽，吴云峰，赵启义，孙长胜，NAND Flash存储的坏块管理方法[J]，电子器件，2011.05。
[5]	Samsung, datasheet: 256MX8Bit/64MX16BitNAND Flashmemory [S], Samsung Electronics, Revision 0.2, March 2003.
[6]	Samsung. NAND Flash spare assignment recommendation [S], http//wwn.Sumsung.corn,2003.
[7]	蔡锦达，王德福，大容量Nand Flash在ARM嵌人式系统中的应用[J]，工业控制计算机.2004,06。
[8]	谢民，高梅国，王超，NAND型Flash在大容量存储回放系统中的应用[J]，电子技术应用，2006.4。
[9]	高文青，沈维聪，NAND存储器在嵌入式系统中的应用[J]，电测与仪表，2008.02。
[10]	高怡祯，基于闪存的星载大容量存储器的研究和实现[J],集成电路应用2003.08。
[11]	张伟功，邱庆林，荣金叶，高可靠性大容量星载存储器的设计与研究[J],第三次会议，2010.08。
[12]	李进，金龙旭，韩双丽，李国宁，王文华，间图像存储器NAND Flash的可靠性[J]，光学精密工程，2012.05。
[13]	沈浩，付宇卓，NAND Flash存储控制器的软硬件划分设计[J]，计算机工程，2004.24。

Cite This Article

Plain Text BibTeX RIS

APA Style

Zhao Long, Shen Xiaohe, Chen Geng, Hu Xiaoxi. (2020). Analysis and Solution of Abnormal Fault of Data Storage Based on NAND-flash. Science Discovery, 8(4), 69-73. https://doi.org/10.11648/j.sd.20200804.12

Copy | Download

ACS Style

Zhao Long; Shen Xiaohe; Chen Geng; Hu Xiaoxi. Analysis and Solution of Abnormal Fault of Data Storage Based on NAND-flash. Sci. Discov. 2020, 8(4), 69-73. doi: 10.11648/j.sd.20200804.12

Copy | Download

AMA Style

Zhao Long, Shen Xiaohe, Chen Geng, Hu Xiaoxi. Analysis and Solution of Abnormal Fault of Data Storage Based on NAND-flash. Sci Discov. 2020;8(4):69-73. doi: 10.11648/j.sd.20200804.12

Copy | Download

@article{10.11648/j.sd.20200804.12,
  author = {Zhao Long and Shen Xiaohe and Chen Geng and Hu Xiaoxi},
  title = {Analysis and Solution of Abnormal Fault of Data Storage Based on NAND-flash},
  journal = {Science Discovery},
  volume = {8},
  number = {4},
  pages = {69-73},
  doi = {10.11648/j.sd.20200804.12},
  url = {https://doi.org/10.11648/j.sd.20200804.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.sd.20200804.12},
  abstract = {NAND-flash memory has the advantages of large capacity and fast rewriting speed. It is suitable for the storage of large amounts of data and is often used as an online storage device for embedded products. However, NAND-flash has the problems of bad blocks and other insufficient reliability.In a certain aerospace model temperature/strain measurement system, the NAND-flash memory is erased and written through DSP software, and the strain/temperature measurement data collected by the sensor is stored in real time. After the system was powered on many times and completed data collection and decoding, it was found that the data stored in the NAND-flash had abnormal faults. By analyzing the test phenomenon and failure mechanism, the failure problem is attributed to the fact that the data in the NAND-flash is not erased, and it is coupled with the newly written data, and it is finally located because the data in the original data address cannot be effectively erased when the data address is stored. Coupling also occurred, resulting in an error in the data address, and the data was coupled after power-on again. Based on the above-mentioned reasons, this paper proposed a troubleshooting method and conducted a test. The verification was successfully passed and the problem was resolved.This method has high reference significance in the large-capacity and high-reliability data storage of NAND-flash in the field of aerospace models.},
 year = {2020}
}

Copy | Download

TY  - JOUR
T1  - Analysis and Solution of Abnormal Fault of Data Storage Based on NAND-flash
AU  - Zhao Long
AU  - Shen Xiaohe
AU  - Chen Geng
AU  - Hu Xiaoxi
Y1  - 2020/08/25
PY  - 2020
N1  - https://doi.org/10.11648/j.sd.20200804.12
DO  - 10.11648/j.sd.20200804.12
T2  - Science Discovery
JF  - Science Discovery
JO  - Science Discovery
SP  - 69
EP  - 73
PB  - Science Publishing Group
SN  - 2331-0650
UR  - https://doi.org/10.11648/j.sd.20200804.12
AB  - NAND-flash memory has the advantages of large capacity and fast rewriting speed. It is suitable for the storage of large amounts of data and is often used as an online storage device for embedded products. However, NAND-flash has the problems of bad blocks and other insufficient reliability.In a certain aerospace model temperature/strain measurement system, the NAND-flash memory is erased and written through DSP software, and the strain/temperature measurement data collected by the sensor is stored in real time. After the system was powered on many times and completed data collection and decoding, it was found that the data stored in the NAND-flash had abnormal faults. By analyzing the test phenomenon and failure mechanism, the failure problem is attributed to the fact that the data in the NAND-flash is not erased, and it is coupled with the newly written data, and it is finally located because the data in the original data address cannot be effectively erased when the data address is stored. Coupling also occurred, resulting in an error in the data address, and the data was coupled after power-on again. Based on the above-mentioned reasons, this paper proposed a troubleshooting method and conducted a test. The verification was successfully passed and the problem was resolved.This method has high reference significance in the large-capacity and high-reliability data storage of NAND-flash in the field of aerospace models.
VL  - 8
IS  - 4
ER  -

Copy | Download

Author Information

Zhao Long

Beijing Institute of Aerospace Control Devices, Beijing, China
Shen Xiaohe

Beijing Institute of Aerospace Control Devices, Beijing, China
Chen Geng

Beijing Institute of Aerospace Control Devices, Beijing, China
Hu Xiaoxi

Beijing Institute of Aerospace Control Devices, Beijing, China

Download PDF

Sections

Plain Text BibTeX RIS

APA Style

Zhao Long, Shen Xiaohe, Chen Geng, Hu Xiaoxi. (2020). Analysis and Solution of Abnormal Fault of Data Storage Based on NAND-flash. Science Discovery, 8(4), 69-73. https://doi.org/10.11648/j.sd.20200804.12

Copy | Download

ACS Style

Zhao Long; Shen Xiaohe; Chen Geng; Hu Xiaoxi. Analysis and Solution of Abnormal Fault of Data Storage Based on NAND-flash. Sci. Discov. 2020, 8(4), 69-73. doi: 10.11648/j.sd.20200804.12

Copy | Download

AMA Style

Zhao Long, Shen Xiaohe, Chen Geng, Hu Xiaoxi. Analysis and Solution of Abnormal Fault of Data Storage Based on NAND-flash. Sci Discov. 2020;8(4):69-73. doi: 10.11648/j.sd.20200804.12

Copy | Download

@article{10.11648/j.sd.20200804.12,
  author = {Zhao Long and Shen Xiaohe and Chen Geng and Hu Xiaoxi},
  title = {Analysis and Solution of Abnormal Fault of Data Storage Based on NAND-flash},
  journal = {Science Discovery},
  volume = {8},
  number = {4},
  pages = {69-73},
  doi = {10.11648/j.sd.20200804.12},
  url = {https://doi.org/10.11648/j.sd.20200804.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.sd.20200804.12},
  abstract = {NAND-flash memory has the advantages of large capacity and fast rewriting speed. It is suitable for the storage of large amounts of data and is often used as an online storage device for embedded products. However, NAND-flash has the problems of bad blocks and other insufficient reliability.In a certain aerospace model temperature/strain measurement system, the NAND-flash memory is erased and written through DSP software, and the strain/temperature measurement data collected by the sensor is stored in real time. After the system was powered on many times and completed data collection and decoding, it was found that the data stored in the NAND-flash had abnormal faults. By analyzing the test phenomenon and failure mechanism, the failure problem is attributed to the fact that the data in the NAND-flash is not erased, and it is coupled with the newly written data, and it is finally located because the data in the original data address cannot be effectively erased when the data address is stored. Coupling also occurred, resulting in an error in the data address, and the data was coupled after power-on again. Based on the above-mentioned reasons, this paper proposed a troubleshooting method and conducted a test. The verification was successfully passed and the problem was resolved.This method has high reference significance in the large-capacity and high-reliability data storage of NAND-flash in the field of aerospace models.},
 year = {2020}
}

Copy | Download

TY  - JOUR
T1  - Analysis and Solution of Abnormal Fault of Data Storage Based on NAND-flash
AU  - Zhao Long
AU  - Shen Xiaohe
AU  - Chen Geng
AU  - Hu Xiaoxi
Y1  - 2020/08/25
PY  - 2020
N1  - https://doi.org/10.11648/j.sd.20200804.12
DO  - 10.11648/j.sd.20200804.12
T2  - Science Discovery
JF  - Science Discovery
JO  - Science Discovery
SP  - 69
EP  - 73
PB  - Science Publishing Group
SN  - 2331-0650
UR  - https://doi.org/10.11648/j.sd.20200804.12
AB  - NAND-flash memory has the advantages of large capacity and fast rewriting speed. It is suitable for the storage of large amounts of data and is often used as an online storage device for embedded products. However, NAND-flash has the problems of bad blocks and other insufficient reliability.In a certain aerospace model temperature/strain measurement system, the NAND-flash memory is erased and written through DSP software, and the strain/temperature measurement data collected by the sensor is stored in real time. After the system was powered on many times and completed data collection and decoding, it was found that the data stored in the NAND-flash had abnormal faults. By analyzing the test phenomenon and failure mechanism, the failure problem is attributed to the fact that the data in the NAND-flash is not erased, and it is coupled with the newly written data, and it is finally located because the data in the original data address cannot be effectively erased when the data address is stored. Coupling also occurred, resulting in an error in the data address, and the data was coupled after power-on again. Based on the above-mentioned reasons, this paper proposed a troubleshooting method and conducted a test. The verification was successfully passed and the problem was resolved.This method has high reference significance in the large-capacity and high-reliability data storage of NAND-flash in the field of aerospace models.
VL  - 8
IS  - 4
ER  -

Copy | Download