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Design of a Low Temperature Drift Bandgap Reference Circuit with Second-order Curvature Compensation

Received: 9 June 2020     Published: 29 June 2020
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Abstract

In order to improve the accuracy and stability of bandgap reference output voltage, a bandgap reference circuit with high power supply rejection ratio and low temperature drift is designed based on 0.18um BCD technology. Based on the traditional bandgap voltage reference structure, this paper designs a current mirror cascade and a prereference circuit to supply power to the bandgap reference, and achieves a high power rejection ratio. At the same time, a PTAT2 current generation circuit is designed to realize the second-order temperature compensation of the reference output voltage. The simulation results show that the power supply voltage is 5V, PSRR is - 80dB, the temperature changes from - 55°C to 125°C, and the reference voltage temperature coefficient is 4.27ppm /°C. The circuit is simple in structure and easy to integrate. It can be widely used in bandgap reference circuit design.

Published in Science Discovery (Volume 8, Issue 3)
DOI 10.11648/j.sd.20200803.11
Page(s) 46-51
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2020. Published by Science Publishing Group

Keywords

Second Order Curvature Compensation, Low Temperature Drift, High Power Rejection ratio

References
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[3] 张万东,陈宏,王一鹏,等. 高电源抑制比和高阶曲率补偿带隙电压基准源[J].微电子学,2011,41(1):57-60.
[4] PAUL R.GRAY,PAUL J.HURST. 模拟集成电路的分析与设计[M]. 北京:高等教育出版社,2003.
[5] 张博亮.一种基于LDO稳压器的带隙基准电压源设计 [J].电子设计工程,2015,23(24):64—66.
[6] Phillip.E. Allen, Douglas R. Holberg. CMOS模拟集成电路设计[M]. 北京:电子工业出版社.2002.
[7] 杨金梅,唐祯安. 采用曲率补偿的高PSRR基准电压源[J].微电子学 ,2009,39(1):34-37.
[8] 王文建. 基于BiCMOS工艺可修调的高精度低温度系数带隙基准源设计[J]. 传感技术学报,2017,30(5):674-677.
[9] Lai Xinquan,Xu Ziyou,Li Yanming,et a1.A CMOS Piecewise Curvature-compensated Voltage Reference [J]. Microelectronics Journal,2009,40(1):39-45.
[10] RAZAVI. B. 模拟CMOS集成电路设计[M].陈贵灿,等译。西安:西安交通大学出版社,2003.
[11] WANG H Y,LAI X Q,LI Y S,et a1.A CMOS bandgap reference corrected by second degree curve[J].Chinese Journal of Electron Devices,2007,30(4):1 155-1 158.
[12] 张宗航,赵毅强,耿俊峰. 一种二阶曲率补偿带隙基准电压源[J].微电子学与计算机,2012,29(5):15-19.
[13] 唐宇,冯全源. 一种低温漂低功耗带隙基准的设计[J].电子元件与材料,2014,33(2):30-33.
[14] Zhou Zekun,Ming Xin,Zhang Bo,et al. A novel precision curvature compensated bandgap reference[J].Journal of Semiconductors,2010,31(1):015010-1-015010-4.
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Cite This Article
  • APA Style

    Can Guo, Rui Xu, Jun Pan. (2020). Design of a Low Temperature Drift Bandgap Reference Circuit with Second-order Curvature Compensation. Science Discovery, 8(3), 46-51. https://doi.org/10.11648/j.sd.20200803.11

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    ACS Style

    Can Guo; Rui Xu; Jun Pan. Design of a Low Temperature Drift Bandgap Reference Circuit with Second-order Curvature Compensation. Sci. Discov. 2020, 8(3), 46-51. doi: 10.11648/j.sd.20200803.11

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    AMA Style

    Can Guo, Rui Xu, Jun Pan. Design of a Low Temperature Drift Bandgap Reference Circuit with Second-order Curvature Compensation. Sci Discov. 2020;8(3):46-51. doi: 10.11648/j.sd.20200803.11

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  • @article{10.11648/j.sd.20200803.11,
      author = {Can Guo and Rui Xu and Jun Pan},
      title = {Design of a Low Temperature Drift Bandgap Reference Circuit with Second-order Curvature Compensation},
      journal = {Science Discovery},
      volume = {8},
      number = {3},
      pages = {46-51},
      doi = {10.11648/j.sd.20200803.11},
      url = {https://doi.org/10.11648/j.sd.20200803.11},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.sd.20200803.11},
      abstract = {In order to improve the accuracy and stability of bandgap reference output voltage, a bandgap reference circuit with high power supply rejection ratio and low temperature drift is designed based on 0.18um BCD technology. Based on the traditional bandgap voltage reference structure, this paper designs a current mirror cascade and a prereference circuit to supply power to the bandgap reference, and achieves a high power rejection ratio. At the same time, a PTAT2 current generation circuit is designed to realize the second-order temperature compensation of the reference output voltage. The simulation results show that the power supply voltage is 5V, PSRR is - 80dB, the temperature changes from - 55°C to 125°C, and the reference voltage temperature coefficient is 4.27ppm /°C. The circuit is simple in structure and easy to integrate. It can be widely used in bandgap reference circuit design.},
     year = {2020}
    }
    

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  • TY  - JOUR
    T1  - Design of a Low Temperature Drift Bandgap Reference Circuit with Second-order Curvature Compensation
    AU  - Can Guo
    AU  - Rui Xu
    AU  - Jun Pan
    Y1  - 2020/06/29
    PY  - 2020
    N1  - https://doi.org/10.11648/j.sd.20200803.11
    DO  - 10.11648/j.sd.20200803.11
    T2  - Science Discovery
    JF  - Science Discovery
    JO  - Science Discovery
    SP  - 46
    EP  - 51
    PB  - Science Publishing Group
    SN  - 2331-0650
    UR  - https://doi.org/10.11648/j.sd.20200803.11
    AB  - In order to improve the accuracy and stability of bandgap reference output voltage, a bandgap reference circuit with high power supply rejection ratio and low temperature drift is designed based on 0.18um BCD technology. Based on the traditional bandgap voltage reference structure, this paper designs a current mirror cascade and a prereference circuit to supply power to the bandgap reference, and achieves a high power rejection ratio. At the same time, a PTAT2 current generation circuit is designed to realize the second-order temperature compensation of the reference output voltage. The simulation results show that the power supply voltage is 5V, PSRR is - 80dB, the temperature changes from - 55°C to 125°C, and the reference voltage temperature coefficient is 4.27ppm /°C. The circuit is simple in structure and easy to integrate. It can be widely used in bandgap reference circuit design.
    VL  - 8
    IS  - 3
    ER  - 

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Author Information
  • Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp., Chongqing, P. R. China

  • Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp., Chongqing, P. R. China

  • Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp., Chongqing, P. R. China

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