Origin of the Shunt Currents and Their Influence on the Ideality Factor (<i>η</i>) of a p-n Junction

Vishnu Gopal

doi:doi:10.11648/j.jeee.20221005.11

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Origin of the Shunt Currents and Their Influence on the Ideality Factor (η) of a p-n Junction

Vishnu Gopal

Published in Journal of Electrical and Electronic Engineering (Volume 10, Issue 5)

Received: 5 August 2022 Accepted: 25 August 2022 Published: 5 September 2022

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Abstract

It is our current belief that non-ideal nature of the current – voltage characteristics of a p-n junction is mainly caused by the contribution from generation – recombination currents. It was, however, recently reported in a gate-controlled diode experiment that the ideality factor of a Mercury Cadmium Telluride junction diode exhibits strong dependence on the surface leakage current of the diode, which means that the surface leakage currents are another possible source that may be responsible for the non-ideal I – V characteristics of a junction diode. This work presents a general physical model that provides an insight in to the origin of the shunt currents in a p-n junction as the surface leakage currents are known to be modelled as shunt current. The role of surface leakage currents in influencing the ideality factor of the junction as one of the sources of shunt current therefore constitutes the main theme of the present communication. The investigation of the effect of dislocations, which also contribute to the shunt current, on the ideality factor of the junction is proposed to be a problem for future study. It is concluded that the surface leakage currents owing their origin to recombination currents are responsible for the operation of a shunt resistance in parallel to the junction and consequent degradation in its dynamic impedance. Whereas the previously reported increase in the thermal reverse bias saturation diffusion current of the junction diode is shown to be due to the real time transfer of minority carriers from the one side of the junction to the opposite side. But the degradation in dynamic impedance of the junction is due to apparent reduction in junction barrier hight from exp (qV/kT) to exp (qV/ηkT) by virtue of the operation of the shunt resistance in parallel to the junction impedance.

Published in	Journal of Electrical and Electronic Engineering (Volume 10, Issue 5)
DOI	10.11648/j.jeee.20221005.11
Page(s)	180-183
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Ideality Factor, p-n Junction, Semiconductor Diode, Shunt Currents, Surface Leakage Currents

References

[1]	Gopal, V., Li, Qing., He, Jiale., He, Kai., Lin Chun and Hu, Wieda. (2016) “Current transport mechanisms in Mercury Cadmium Telluride diode,” J. Appl. Phys. Vol. 120, No. 8, pp 084508-1 to 084508-10.
[2]	Sah, C. T., Noyce, R. N. and Shockley, W. (1957) “Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics,” Proc. IRE, Vol, 45, pp 1228-1243.
[3]	Gopal, V and Gupta, S. (2003) “Effect of dislocations on the zero-bias resistance-area product, quantum efficiency and spectral response of LWIR HgCdTe photovoltaic detectors,” IEEE Transaction Electron Devices Vol 50, No. 5, pp 1220-1226.
[4]	Many, A., Goldstein, Y and Grover, N. B. (1965) “Semiconductor Surfaces,” North-Holland Publishing Company- Amsterdam, p. 211.
[5]	Gopal, V and Gupta, S., (2004) “Temperature dependence of ohmic shunt resistance in Mercury Cadmium Telluride junction diode,” Infrared Phys. And Technology, Vol. 45, No. 4, pp 265-271.
[6]	Gopal, V. and Gupta, S. (2004) “Contribution of dislocations to the zero-bias resistance-area product of LWIR HgCdTe junction photodiodes at low temperature,” IEEE Transaction Electron Devices Vol. 51, No. 7, pp 1078-1083.
[7]	Gopal, V and Gupta, S. (2004) “Effect of dislocations on minority carrier lifetime in HgCdTe,” J. Appl. Phys. Vol. 95, No. 5, pp 2467-2472.
[8]	Gopal, V and Gupta, S (2005) “Modelling of Zero-bias Resistance-area Product of Long wavelength Infrared HgCdTe – on – Si Diodes Fabricated from MBE Grown Epitaxial Layers,” J. Electronic Materials Vol. 34 No. 10, pp 1280-1286.
[9]	Gupta, S., Gopal, V and Tandon, R. P. “Realization of Very Long Wavelength Infrared Photovoltaic Detector Arrays on Mercury Cadmium Telluride Epitaxial Layers Grown on Si Substrates,” J. Electronic Materials Vol. 35 No. 11, pp 2056-2060, (2006).
[10]	Gopal, V and Gupta, S. (2006) “A Study of Dislocation Contribution from the Temperature dependence of Zero-bias Resistance-Area Product of Long Wavelength n – on – p Mercury Cadmium Telluride Diodes,” Phys. Stat. Sol. (a), Vol. 203 No. 2, pp 397-403.
[11]	Johnson, S., Rhiger, M. D. R., Rosebeck, J. P., Peterson, J. M., Taylor, S. M. and Boyd, M. E., (July/August 1992) “ Effect of dislocations on the electrical and optical properties of long-wavelength infrared HgCdTe photovoltaic detectors,” J. Vac. Sci. Technol. B, Vol. 10, No. 4, pp 1499-1506.
[12]	Baker, I. M and Maxey, C. D. (2001) “Summary of HgCdTe 2D array technology in the U.K,” J. Electron. Mater. Vol. 30, pp 682-689.
[13]	Gopal, V., Gautam, N., Plis, E. and Krishna, S. (2015) “Modelling of current – voltage characteristics of infrared photo-detectors based on type II InAs/GaSb super-lattice diodes with unipolar blocking layers,” AIP Advances 5 (9), 097132.

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APA Style

Vishnu Gopal. (2022). Origin of the Shunt Currents and Their Influence on the Ideality Factor (η) of a p-n Junction. Journal of Electrical and Electronic Engineering, 10(5), 180-183. https://doi.org/10.11648/j.jeee.20221005.11

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ACS Style

Vishnu Gopal. Origin of the Shunt Currents and Their Influence on the Ideality Factor (η) of a p-n Junction. J. Electr. Electron. Eng. 2022, 10(5), 180-183. doi: 10.11648/j.jeee.20221005.11

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AMA Style

Vishnu Gopal. Origin of the Shunt Currents and Their Influence on the Ideality Factor (η) of a p-n Junction. J Electr Electron Eng. 2022;10(5):180-183. doi: 10.11648/j.jeee.20221005.11

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@article{10.11648/j.jeee.20221005.11,
  author = {Vishnu Gopal},
  title = {Origin of the Shunt Currents and Their Influence on the Ideality Factor (η) of a p-n Junction},
  journal = {Journal of Electrical and Electronic Engineering},
  volume = {10},
  number = {5},
  pages = {180-183},
  doi = {10.11648/j.jeee.20221005.11},
  url = {https://doi.org/10.11648/j.jeee.20221005.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.20221005.11},
  abstract = {It is our current belief that non-ideal nature of the current – voltage characteristics of a p-n junction is mainly caused by the contribution from generation – recombination currents. It was, however, recently reported in a gate-controlled diode experiment that the ideality factor of a Mercury Cadmium Telluride junction diode exhibits strong dependence on the surface leakage current of the diode, which means that the surface leakage currents are another possible source that may be responsible for the non-ideal I – V characteristics of a junction diode. This work presents a general physical model that provides an insight in to the origin of the shunt currents in a p-n junction as the surface leakage currents are known to be modelled as shunt current. The role of surface leakage currents in influencing the ideality factor of the junction as one of the sources of shunt current therefore constitutes the main theme of the present communication. The investigation of the effect of dislocations, which also contribute to the shunt current, on the ideality factor of the junction is proposed to be a problem for future study. It is concluded that the surface leakage currents owing their origin to recombination currents are responsible for the operation of a shunt resistance in parallel to the junction and consequent degradation in its dynamic impedance. Whereas the previously reported increase in the thermal reverse bias saturation diffusion current of the junction diode is shown to be due to the real time transfer of minority carriers from the one side of the junction to the opposite side. But the degradation in dynamic impedance of the junction is due to apparent reduction in junction barrier hight from exp (qV/kT) to exp (qV/ηkT) by virtue of the operation of the shunt resistance in parallel to the junction impedance.},
 year = {2022}
}

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TY  - JOUR
T1  - Origin of the Shunt Currents and Their Influence on the Ideality Factor (η) of a p-n Junction
AU  - Vishnu Gopal
Y1  - 2022/09/05
PY  - 2022
N1  - https://doi.org/10.11648/j.jeee.20221005.11
DO  - 10.11648/j.jeee.20221005.11
T2  - Journal of Electrical and Electronic Engineering
JF  - Journal of Electrical and Electronic Engineering
JO  - Journal of Electrical and Electronic Engineering
SP  - 180
EP  - 183
PB  - Science Publishing Group
SN  - 2329-1605
UR  - https://doi.org/10.11648/j.jeee.20221005.11
AB  - It is our current belief that non-ideal nature of the current – voltage characteristics of a p-n junction is mainly caused by the contribution from generation – recombination currents. It was, however, recently reported in a gate-controlled diode experiment that the ideality factor of a Mercury Cadmium Telluride junction diode exhibits strong dependence on the surface leakage current of the diode, which means that the surface leakage currents are another possible source that may be responsible for the non-ideal I – V characteristics of a junction diode. This work presents a general physical model that provides an insight in to the origin of the shunt currents in a p-n junction as the surface leakage currents are known to be modelled as shunt current. The role of surface leakage currents in influencing the ideality factor of the junction as one of the sources of shunt current therefore constitutes the main theme of the present communication. The investigation of the effect of dislocations, which also contribute to the shunt current, on the ideality factor of the junction is proposed to be a problem for future study. It is concluded that the surface leakage currents owing their origin to recombination currents are responsible for the operation of a shunt resistance in parallel to the junction and consequent degradation in its dynamic impedance. Whereas the previously reported increase in the thermal reverse bias saturation diffusion current of the junction diode is shown to be due to the real time transfer of minority carriers from the one side of the junction to the opposite side. But the degradation in dynamic impedance of the junction is due to apparent reduction in junction barrier hight from exp (qV/kT) to exp (qV/ηkT) by virtue of the operation of the shunt resistance in parallel to the junction impedance.
VL  - 10
IS  - 5
ER  -

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Author Information

Vishnu Gopal

Institute of Defence Scientists and Technologists, Centre for Fire, Explosive and Environment Safety (CFEES), Complex, Brig. S. K. Majumdar Marg, Delhi, India

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APA Style

Vishnu Gopal. (2022). Origin of the Shunt Currents and Their Influence on the Ideality Factor (η) of a p-n Junction. Journal of Electrical and Electronic Engineering, 10(5), 180-183. https://doi.org/10.11648/j.jeee.20221005.11

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ACS Style

Vishnu Gopal. Origin of the Shunt Currents and Their Influence on the Ideality Factor (η) of a p-n Junction. J. Electr. Electron. Eng. 2022, 10(5), 180-183. doi: 10.11648/j.jeee.20221005.11

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AMA Style

Vishnu Gopal. Origin of the Shunt Currents and Their Influence on the Ideality Factor (η) of a p-n Junction. J Electr Electron Eng. 2022;10(5):180-183. doi: 10.11648/j.jeee.20221005.11

Copy | Download

@article{10.11648/j.jeee.20221005.11,
  author = {Vishnu Gopal},
  title = {Origin of the Shunt Currents and Their Influence on the Ideality Factor (η) of a p-n Junction},
  journal = {Journal of Electrical and Electronic Engineering},
  volume = {10},
  number = {5},
  pages = {180-183},
  doi = {10.11648/j.jeee.20221005.11},
  url = {https://doi.org/10.11648/j.jeee.20221005.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.20221005.11},
  abstract = {It is our current belief that non-ideal nature of the current – voltage characteristics of a p-n junction is mainly caused by the contribution from generation – recombination currents. It was, however, recently reported in a gate-controlled diode experiment that the ideality factor of a Mercury Cadmium Telluride junction diode exhibits strong dependence on the surface leakage current of the diode, which means that the surface leakage currents are another possible source that may be responsible for the non-ideal I – V characteristics of a junction diode. This work presents a general physical model that provides an insight in to the origin of the shunt currents in a p-n junction as the surface leakage currents are known to be modelled as shunt current. The role of surface leakage currents in influencing the ideality factor of the junction as one of the sources of shunt current therefore constitutes the main theme of the present communication. The investigation of the effect of dislocations, which also contribute to the shunt current, on the ideality factor of the junction is proposed to be a problem for future study. It is concluded that the surface leakage currents owing their origin to recombination currents are responsible for the operation of a shunt resistance in parallel to the junction and consequent degradation in its dynamic impedance. Whereas the previously reported increase in the thermal reverse bias saturation diffusion current of the junction diode is shown to be due to the real time transfer of minority carriers from the one side of the junction to the opposite side. But the degradation in dynamic impedance of the junction is due to apparent reduction in junction barrier hight from exp (qV/kT) to exp (qV/ηkT) by virtue of the operation of the shunt resistance in parallel to the junction impedance.},
 year = {2022}
}

Copy | Download

TY  - JOUR
T1  - Origin of the Shunt Currents and Their Influence on the Ideality Factor (η) of a p-n Junction
AU  - Vishnu Gopal
Y1  - 2022/09/05
PY  - 2022
N1  - https://doi.org/10.11648/j.jeee.20221005.11
DO  - 10.11648/j.jeee.20221005.11
T2  - Journal of Electrical and Electronic Engineering
JF  - Journal of Electrical and Electronic Engineering
JO  - Journal of Electrical and Electronic Engineering
SP  - 180
EP  - 183
PB  - Science Publishing Group
SN  - 2329-1605
UR  - https://doi.org/10.11648/j.jeee.20221005.11
AB  - It is our current belief that non-ideal nature of the current – voltage characteristics of a p-n junction is mainly caused by the contribution from generation – recombination currents. It was, however, recently reported in a gate-controlled diode experiment that the ideality factor of a Mercury Cadmium Telluride junction diode exhibits strong dependence on the surface leakage current of the diode, which means that the surface leakage currents are another possible source that may be responsible for the non-ideal I – V characteristics of a junction diode. This work presents a general physical model that provides an insight in to the origin of the shunt currents in a p-n junction as the surface leakage currents are known to be modelled as shunt current. The role of surface leakage currents in influencing the ideality factor of the junction as one of the sources of shunt current therefore constitutes the main theme of the present communication. The investigation of the effect of dislocations, which also contribute to the shunt current, on the ideality factor of the junction is proposed to be a problem for future study. It is concluded that the surface leakage currents owing their origin to recombination currents are responsible for the operation of a shunt resistance in parallel to the junction and consequent degradation in its dynamic impedance. Whereas the previously reported increase in the thermal reverse bias saturation diffusion current of the junction diode is shown to be due to the real time transfer of minority carriers from the one side of the junction to the opposite side. But the degradation in dynamic impedance of the junction is due to apparent reduction in junction barrier hight from exp (qV/kT) to exp (qV/ηkT) by virtue of the operation of the shunt resistance in parallel to the junction impedance.
VL  - 10
IS  - 5
ER  -

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