Investigation of the Airborne Molecular Contamination Behavior in 300 mm Semiconductor Front - End Manufacturing

Peter Franze; Germar Schneider; Clara Zaengle; Markus Pfeffer; Stefan Kaskel

doi:doi:10.11648/j.ijmsa.20200901.13

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Investigation of the Airborne Molecular Contamination Behavior in 300 mm Semiconductor Front - End Manufacturing

Peter Franze, Germar Schneider, Clara Zaengle, Markus Pfeffer, Stefan Kaskel

Published in International Journal of Materials Science and Applications (Volume 9, Issue 1)

Received: 6 January 2020 Accepted: 15 January 2020 Published: 6 March 2020

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Abstract

Front-end manufacturing of power semiconductor devices requires numerous different processes and materials. To control the complexity of fully automated 300 mm manufacturing lines, which typically utilize closed wafer containers, so called FOUPs (Front Opening Unified Pod), a systematic FOUP management concept is mandatory. This concept has to fulfill the quality targets in terms of organic and inorganic contaminants to assure the highest yield level of the semiconductor products. The focus of this study is to understand the behavior of airborne molecular contaminations (AMC) and to define strategies to prevent yield loss driven by AMC. The first step was to achieve a comprehensive knowledge of the AMC level within the different process steps of a selected power technology. Sampling and analysis procedures based on laser spectroscopy, measurements of electrical conductivity and mass spectrometry systems were used to understand the AMC level of the investigated components. A special automated research platform to analyze the gas phase in the FOUPs was used within the 300 mm high volume power semiconductor fab at Infineon Technologies Dresden. A pronounced dependence of the investigated component level on the different production steps was found. First offline root cause analyses due to contaminations of FOUPs with boron were performed using mass spectrometry, and the air filter systems used within the 300 mm cleanroom could be identified as a second source for boron contaminations. Other special experiments investigated the time dependency of the AMC level in the FOUP atmospheres. With this work, Infineon Dresden has established methods and strategies to prevent AMC-caused yield losses.

Published in	International Journal of Materials Science and Applications (Volume 9, Issue 1)
DOI	10.11648/j.ijmsa.20200901.13
Page(s)	14-24
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2020. Published by Science Publishing Group

Keywords

AMC, Airborne Molecular Contamination, FOUP, FOUP Management, Chemical Analysis, Power Semiconductors, CRDS, Mass Spectroscopy, Electrochemical Conductivity Measurements

References

[1]	Schneider, G., Wagner, T., Kraft, M., 2015. Use of simulation studies to overcome key challenges in the fab automation of a 300 mm power semiconductor pilot line comprising thin-wafer processing. In: 2015 16th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), Advanced Semiconductor Manufacturing, IEEE/SEMI Conference and Workshop. Saratoga Springs, NY, USA, 3-6 May 2015. New York: IEEE.
[2]	Heinrich, et al., 2008. Pursuing the increase of factory automation in 200 mm frontend manufacturing to manage the changes imposed by the transition from high-volume low-mix to high-mix low-volume production. In: 2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, Advanced Semiconductor Manufacturing, IEEE/SEMI Conference and Workshop. Cambridge, MA, USA, 5-7 May 2008. New York: IEEE.
[3]	Lin, I-K., Bai, H., Wu, B.-J., 2009. Surface deposition of ionic contaminants on silicon wafers in a cleanroom environment. IEEE Transactions on Semiconductor Manufacturing, 22 (2), pp. 321-327.
[4]	Schneider, et al., 2016. Contamination control for wafer container used within 300 mm manufacturing for power microelectronics. Solid State Phenomena, 255, pp. 381–386.
[5]	Zhu, S., 1997. Molecular contamination on silicon wafers: a theoretical study. In: IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop ASMC 97 Proceedings, Advanced Semiconductor Manufacturing Conference and Workshop. Cambridge, MA, USA, 10-12 September 1997. New York: IEEE.
[6]	Frickinger, et al., 2000. Reducing airborne molecular contamination by efficient purging of FOUPs for 300 mm wafers - the influence of materials properties. IEEE Transactions on Semiconductor Manufacturing, 13 (4), pp. 427-433.
[7]	Illuzzi, et al., 2003. Airborne molecular contamination: on-line analytical system for real time contamination control. In: Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI, Advanced Semiconductor Manufacturing Conference and Workshop. Munich, Germany, 31 March-1 April 2003. New York: IEEE.
[8]	Yeh, et al., 2004. The removal of airborne molecular contamination in cleanroom using PTFE and chemical filters. IEEE Transactions on Semiconductor Manufacturing, 17 (2), pp. 214-220.
[9]	Wu, B.-J., Bai, H., Lin, I-K., Liu, S. S., 2010. Al–Cu pattern wafer study on metal corrosion due to Chloride ion contaminants. IEEE Transactions on Semiconductor Manufacturing, 23 (4), pp. 553-558.
[10]	Hwang, et al., 2012. Innovative approach to identify location of AMC source in cleanroom by inverse computational fluid dynamics modeling. In: 2012 SEMI Advanced Semiconductor Manufacturing Conference, 2012 SEMI Advanced Semiconductor Manufacturing Conference. Saratoga Springs, NY, USA, 15-17 May 2012. New York: IEEE.
[11]	Pfeffer, M., Richter, H., Altmann, R., Leibold, A., Bauer, A., 2016. Enhanced contamination control methods in advanced wafer processing. In: 2016 International Symposium on Semiconductor Manufacturing (ISSM), 2016 International Symposium on Semiconductor Manufacturing (ISSM). Tokyo, Japan, 12-13 December 2016. New York: IEEE.
[12]	Baltzinger, J.-L., Bruno, D., 2010. Contamination monitoring and analysis in semiconductor manufacturing [e-book] London: IntechOpen Limited. Available through: [Accessed 3 December 2019].
[13]	Mittal, K. L., Kohli, R., 2015. Developments in surface contamination and cleaning: Volume 1: Fundamentals and applied aspects. 2nd ed. San Diego: Elsevier.
[14]	International Technology Roadmap for Semiconductors, 2014. ITRS 2011 Edition. [online] Available at: [Accessed 3 December 2019].
[15]	Picarro, Inc., Cavity Ring-Down Spectroscopy (CRDS). [online] Available at: [Accessed 3 December 2019].
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APA Style

Peter Franze, Germar Schneider, Clara Zaengle, Markus Pfeffer, Stefan Kaskel. (2020). Investigation of the Airborne Molecular Contamination Behavior in 300 mm Semiconductor Front - End Manufacturing. International Journal of Materials Science and Applications, 9(1), 14-24. https://doi.org/10.11648/j.ijmsa.20200901.13

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ACS Style

Peter Franze; Germar Schneider; Clara Zaengle; Markus Pfeffer; Stefan Kaskel. Investigation of the Airborne Molecular Contamination Behavior in 300 mm Semiconductor Front - End Manufacturing. Int. J. Mater. Sci. Appl. 2020, 9(1), 14-24. doi: 10.11648/j.ijmsa.20200901.13

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AMA Style

Peter Franze, Germar Schneider, Clara Zaengle, Markus Pfeffer, Stefan Kaskel. Investigation of the Airborne Molecular Contamination Behavior in 300 mm Semiconductor Front - End Manufacturing. Int J Mater Sci Appl. 2020;9(1):14-24. doi: 10.11648/j.ijmsa.20200901.13

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@article{10.11648/j.ijmsa.20200901.13,
  author = {Peter Franze and Germar Schneider and Clara Zaengle and Markus Pfeffer and Stefan Kaskel},
  title = {Investigation of the Airborne Molecular Contamination Behavior in 300 mm Semiconductor Front - End Manufacturing},
  journal = {International Journal of Materials Science and Applications},
  volume = {9},
  number = {1},
  pages = {14-24},
  doi = {10.11648/j.ijmsa.20200901.13},
  url = {https://doi.org/10.11648/j.ijmsa.20200901.13},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20200901.13},
  abstract = {Front-end manufacturing of power semiconductor devices requires numerous different processes and materials. To control the complexity of fully automated 300 mm manufacturing lines, which typically utilize closed wafer containers, so called FOUPs (Front Opening Unified Pod), a systematic FOUP management concept is mandatory. This concept has to fulfill the quality targets in terms of organic and inorganic contaminants to assure the highest yield level of the semiconductor products. The focus of this study is to understand the behavior of airborne molecular contaminations (AMC) and to define strategies to prevent yield loss driven by AMC. The first step was to achieve a comprehensive knowledge of the AMC level within the different process steps of a selected power technology. Sampling and analysis procedures based on laser spectroscopy, measurements of electrical conductivity and mass spectrometry systems were used to understand the AMC level of the investigated components. A special automated research platform to analyze the gas phase in the FOUPs was used within the 300 mm high volume power semiconductor fab at Infineon Technologies Dresden. A pronounced dependence of the investigated component level on the different production steps was found. First offline root cause analyses due to contaminations of FOUPs with boron were performed using mass spectrometry, and the air filter systems used within the 300 mm cleanroom could be identified as a second source for boron contaminations. Other special experiments investigated the time dependency of the AMC level in the FOUP atmospheres. With this work, Infineon Dresden has established methods and strategies to prevent AMC-caused yield losses.},
 year = {2020}
}

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TY  - JOUR
T1  - Investigation of the Airborne Molecular Contamination Behavior in 300 mm Semiconductor Front - End Manufacturing
AU  - Peter Franze
AU  - Germar Schneider
AU  - Clara Zaengle
AU  - Markus Pfeffer
AU  - Stefan Kaskel
Y1  - 2020/03/06
PY  - 2020
N1  - https://doi.org/10.11648/j.ijmsa.20200901.13
DO  - 10.11648/j.ijmsa.20200901.13
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 14
EP  - 24
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20200901.13
AB  - Front-end manufacturing of power semiconductor devices requires numerous different processes and materials. To control the complexity of fully automated 300 mm manufacturing lines, which typically utilize closed wafer containers, so called FOUPs (Front Opening Unified Pod), a systematic FOUP management concept is mandatory. This concept has to fulfill the quality targets in terms of organic and inorganic contaminants to assure the highest yield level of the semiconductor products. The focus of this study is to understand the behavior of airborne molecular contaminations (AMC) and to define strategies to prevent yield loss driven by AMC. The first step was to achieve a comprehensive knowledge of the AMC level within the different process steps of a selected power technology. Sampling and analysis procedures based on laser spectroscopy, measurements of electrical conductivity and mass spectrometry systems were used to understand the AMC level of the investigated components. A special automated research platform to analyze the gas phase in the FOUPs was used within the 300 mm high volume power semiconductor fab at Infineon Technologies Dresden. A pronounced dependence of the investigated component level on the different production steps was found. First offline root cause analyses due to contaminations of FOUPs with boron were performed using mass spectrometry, and the air filter systems used within the 300 mm cleanroom could be identified as a second source for boron contaminations. Other special experiments investigated the time dependency of the AMC level in the FOUP atmospheres. With this work, Infineon Dresden has established methods and strategies to prevent AMC-caused yield losses.
VL  - 9
IS  - 1
ER  -

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Author Information

Peter Franze

Infineon Technologies Dresden GmbH & Co. KG, Dresden, Germany
Germar Schneider

Infineon Technologies Dresden GmbH & Co. KG, Dresden, Germany
Clara Zaengle

Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Erlangen, Germany
Markus Pfeffer

Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Erlangen, Germany
Stefan Kaskel

Chair of Inorganic Chemistry I, Technical University of Dresden, Dresden, Germany

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APA Style

Peter Franze, Germar Schneider, Clara Zaengle, Markus Pfeffer, Stefan Kaskel. (2020). Investigation of the Airborne Molecular Contamination Behavior in 300 mm Semiconductor Front - End Manufacturing. International Journal of Materials Science and Applications, 9(1), 14-24. https://doi.org/10.11648/j.ijmsa.20200901.13

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ACS Style

Peter Franze; Germar Schneider; Clara Zaengle; Markus Pfeffer; Stefan Kaskel. Investigation of the Airborne Molecular Contamination Behavior in 300 mm Semiconductor Front - End Manufacturing. Int. J. Mater. Sci. Appl. 2020, 9(1), 14-24. doi: 10.11648/j.ijmsa.20200901.13

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AMA Style

Peter Franze, Germar Schneider, Clara Zaengle, Markus Pfeffer, Stefan Kaskel. Investigation of the Airborne Molecular Contamination Behavior in 300 mm Semiconductor Front - End Manufacturing. Int J Mater Sci Appl. 2020;9(1):14-24. doi: 10.11648/j.ijmsa.20200901.13

Copy | Download

@article{10.11648/j.ijmsa.20200901.13,
  author = {Peter Franze and Germar Schneider and Clara Zaengle and Markus Pfeffer and Stefan Kaskel},
  title = {Investigation of the Airborne Molecular Contamination Behavior in 300 mm Semiconductor Front - End Manufacturing},
  journal = {International Journal of Materials Science and Applications},
  volume = {9},
  number = {1},
  pages = {14-24},
  doi = {10.11648/j.ijmsa.20200901.13},
  url = {https://doi.org/10.11648/j.ijmsa.20200901.13},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20200901.13},
  abstract = {Front-end manufacturing of power semiconductor devices requires numerous different processes and materials. To control the complexity of fully automated 300 mm manufacturing lines, which typically utilize closed wafer containers, so called FOUPs (Front Opening Unified Pod), a systematic FOUP management concept is mandatory. This concept has to fulfill the quality targets in terms of organic and inorganic contaminants to assure the highest yield level of the semiconductor products. The focus of this study is to understand the behavior of airborne molecular contaminations (AMC) and to define strategies to prevent yield loss driven by AMC. The first step was to achieve a comprehensive knowledge of the AMC level within the different process steps of a selected power technology. Sampling and analysis procedures based on laser spectroscopy, measurements of electrical conductivity and mass spectrometry systems were used to understand the AMC level of the investigated components. A special automated research platform to analyze the gas phase in the FOUPs was used within the 300 mm high volume power semiconductor fab at Infineon Technologies Dresden. A pronounced dependence of the investigated component level on the different production steps was found. First offline root cause analyses due to contaminations of FOUPs with boron were performed using mass spectrometry, and the air filter systems used within the 300 mm cleanroom could be identified as a second source for boron contaminations. Other special experiments investigated the time dependency of the AMC level in the FOUP atmospheres. With this work, Infineon Dresden has established methods and strategies to prevent AMC-caused yield losses.},
 year = {2020}
}

Copy | Download

TY  - JOUR
T1  - Investigation of the Airborne Molecular Contamination Behavior in 300 mm Semiconductor Front - End Manufacturing
AU  - Peter Franze
AU  - Germar Schneider
AU  - Clara Zaengle
AU  - Markus Pfeffer
AU  - Stefan Kaskel
Y1  - 2020/03/06
PY  - 2020
N1  - https://doi.org/10.11648/j.ijmsa.20200901.13
DO  - 10.11648/j.ijmsa.20200901.13
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 14
EP  - 24
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20200901.13
AB  - Front-end manufacturing of power semiconductor devices requires numerous different processes and materials. To control the complexity of fully automated 300 mm manufacturing lines, which typically utilize closed wafer containers, so called FOUPs (Front Opening Unified Pod), a systematic FOUP management concept is mandatory. This concept has to fulfill the quality targets in terms of organic and inorganic contaminants to assure the highest yield level of the semiconductor products. The focus of this study is to understand the behavior of airborne molecular contaminations (AMC) and to define strategies to prevent yield loss driven by AMC. The first step was to achieve a comprehensive knowledge of the AMC level within the different process steps of a selected power technology. Sampling and analysis procedures based on laser spectroscopy, measurements of electrical conductivity and mass spectrometry systems were used to understand the AMC level of the investigated components. A special automated research platform to analyze the gas phase in the FOUPs was used within the 300 mm high volume power semiconductor fab at Infineon Technologies Dresden. A pronounced dependence of the investigated component level on the different production steps was found. First offline root cause analyses due to contaminations of FOUPs with boron were performed using mass spectrometry, and the air filter systems used within the 300 mm cleanroom could be identified as a second source for boron contaminations. Other special experiments investigated the time dependency of the AMC level in the FOUP atmospheres. With this work, Infineon Dresden has established methods and strategies to prevent AMC-caused yield losses.
VL  - 9
IS  - 1
ER  -

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