Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz

Tsung-Tse Lin; Hideki Hirayama

doi:doi:10.11648/j.ijmsa.20170605.11

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Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz

Tsung-Tse Lin, Hideki Hirayama

Published in International Journal of Materials Science and Applications (Volume 6, Issue 5)

Received: 4 July 2017 Accepted: 17 July 2017 Published: 11 August 2017

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Abstract

In order to realize high temperature lasing of low frequency (< 2 THz) terahertz quantum cascade lasers (THz QCLs), selective carrier injection into an upper lasing level using an indirect injection (II) scheme is an effective method for inducing population inversion. The II scheme is realized with a four-level system. However, a three-level system that operates at low applied bias voltages causes additional lasing at higher frequencies (4～5 THz). By detuning the wave functions at the three lasing levels operating at low bias voltages, we were able to operate an II scheme THz QCL at a single stable frequency. Utilizing the higher injection selectivity, achieved through an indirect scattering-assisted injection process combined with diagonal emission, we were able to demonstrate stable operation of an AlGaAs/GaAs QCL operating at 1.89 THz at temperatures up to 160 K.

Published in	International Journal of Materials Science and Applications (Volume 6, Issue 5)
DOI	10.11648/j.ijmsa.20170605.11
Page(s)	230-234
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2017. Published by Science Publishing Group

Keywords

Terahertz, Quantum Cascade Lasers, Indirect Injection

References

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[14]	K. Fujita, M. Yamanishi, S. Furuta, K. Tanaka, T. Edamura, T. Kubis, and G. Klimeck, "Indirectly pumped 3.7 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy," Opt. Express 20 (2012) 20647.
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APA Style

Tsung-Tse Lin, Hideki Hirayama. (2017). Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz. International Journal of Materials Science and Applications, 6(5), 230-234. https://doi.org/10.11648/j.ijmsa.20170605.11

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ACS Style

Tsung-Tse Lin; Hideki Hirayama. Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz. Int. J. Mater. Sci. Appl. 2017, 6(5), 230-234. doi: 10.11648/j.ijmsa.20170605.11

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AMA Style

Tsung-Tse Lin, Hideki Hirayama. Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz. Int J Mater Sci Appl. 2017;6(5):230-234. doi: 10.11648/j.ijmsa.20170605.11

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@article{10.11648/j.ijmsa.20170605.11,
  author = {Tsung-Tse Lin and Hideki Hirayama},
  title = {Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz},
  journal = {International Journal of Materials Science and Applications},
  volume = {6},
  number = {5},
  pages = {230-234},
  doi = {10.11648/j.ijmsa.20170605.11},
  url = {https://doi.org/10.11648/j.ijmsa.20170605.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20170605.11},
  abstract = {In order to realize high temperature lasing of low frequency (< 2 THz) terahertz quantum cascade lasers (THz QCLs), selective carrier injection into an upper lasing level using an indirect injection (II) scheme is an effective method for inducing population inversion. The II scheme is realized with a four-level system. However, a three-level system that operates at low applied bias voltages causes additional lasing at higher frequencies (4～5 THz). By detuning the wave functions at the three lasing levels operating at low bias voltages, we were able to operate an II scheme THz QCL at a single stable frequency. Utilizing the higher injection selectivity, achieved through an indirect scattering-assisted injection process combined with diagonal emission, we were able to demonstrate stable operation of an AlGaAs/GaAs QCL operating at 1.89 THz at temperatures up to 160 K.},
 year = {2017}
}

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TY  - JOUR
T1  - Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz
AU  - Tsung-Tse Lin
AU  - Hideki Hirayama
Y1  - 2017/08/11
PY  - 2017
N1  - https://doi.org/10.11648/j.ijmsa.20170605.11
DO  - 10.11648/j.ijmsa.20170605.11
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 230
EP  - 234
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20170605.11
AB  - In order to realize high temperature lasing of low frequency (< 2 THz) terahertz quantum cascade lasers (THz QCLs), selective carrier injection into an upper lasing level using an indirect injection (II) scheme is an effective method for inducing population inversion. The II scheme is realized with a four-level system. However, a three-level system that operates at low applied bias voltages causes additional lasing at higher frequencies (4～5 THz). By detuning the wave functions at the three lasing levels operating at low bias voltages, we were able to operate an II scheme THz QCL at a single stable frequency. Utilizing the higher injection selectivity, achieved through an indirect scattering-assisted injection process combined with diagonal emission, we were able to demonstrate stable operation of an AlGaAs/GaAs QCL operating at 1.89 THz at temperatures up to 160 K.
VL  - 6
IS  - 5
ER  -

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Author Information

Tsung-Tse Lin

Terahertz Quantum Device Laboratory, Center for Advanced Photonics, RIKEN, Sendai, Japan
Hideki Hirayama

Terahertz Quantum Device Laboratory, Center for Advanced Photonics, RIKEN, Sendai, Japan

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Plain Text BibTeX RIS

APA Style

Tsung-Tse Lin, Hideki Hirayama. (2017). Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz. International Journal of Materials Science and Applications, 6(5), 230-234. https://doi.org/10.11648/j.ijmsa.20170605.11

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ACS Style

Tsung-Tse Lin; Hideki Hirayama. Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz. Int. J. Mater. Sci. Appl. 2017, 6(5), 230-234. doi: 10.11648/j.ijmsa.20170605.11

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AMA Style

Tsung-Tse Lin, Hideki Hirayama. Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz. Int J Mater Sci Appl. 2017;6(5):230-234. doi: 10.11648/j.ijmsa.20170605.11

Copy | Download

@article{10.11648/j.ijmsa.20170605.11,
  author = {Tsung-Tse Lin and Hideki Hirayama},
  title = {Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz},
  journal = {International Journal of Materials Science and Applications},
  volume = {6},
  number = {5},
  pages = {230-234},
  doi = {10.11648/j.ijmsa.20170605.11},
  url = {https://doi.org/10.11648/j.ijmsa.20170605.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20170605.11},
  abstract = {In order to realize high temperature lasing of low frequency (< 2 THz) terahertz quantum cascade lasers (THz QCLs), selective carrier injection into an upper lasing level using an indirect injection (II) scheme is an effective method for inducing population inversion. The II scheme is realized with a four-level system. However, a three-level system that operates at low applied bias voltages causes additional lasing at higher frequencies (4～5 THz). By detuning the wave functions at the three lasing levels operating at low bias voltages, we were able to operate an II scheme THz QCL at a single stable frequency. Utilizing the higher injection selectivity, achieved through an indirect scattering-assisted injection process combined with diagonal emission, we were able to demonstrate stable operation of an AlGaAs/GaAs QCL operating at 1.89 THz at temperatures up to 160 K.},
 year = {2017}
}

Copy | Download

TY  - JOUR
T1  - Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz
AU  - Tsung-Tse Lin
AU  - Hideki Hirayama
Y1  - 2017/08/11
PY  - 2017
N1  - https://doi.org/10.11648/j.ijmsa.20170605.11
DO  - 10.11648/j.ijmsa.20170605.11
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 230
EP  - 234
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20170605.11
AB  - In order to realize high temperature lasing of low frequency (< 2 THz) terahertz quantum cascade lasers (THz QCLs), selective carrier injection into an upper lasing level using an indirect injection (II) scheme is an effective method for inducing population inversion. The II scheme is realized with a four-level system. However, a three-level system that operates at low applied bias voltages causes additional lasing at higher frequencies (4～5 THz). By detuning the wave functions at the three lasing levels operating at low bias voltages, we were able to operate an II scheme THz QCL at a single stable frequency. Utilizing the higher injection selectivity, achieved through an indirect scattering-assisted injection process combined with diagonal emission, we were able to demonstrate stable operation of an AlGaAs/GaAs QCL operating at 1.89 THz at temperatures up to 160 K.
VL  - 6
IS  - 5
ER  -

Copy | Download