AgInSe2 Thin Films Prepared by Electrodeposition Process

Mounir Ait Aouaj; Raquel Diaz; Fouzia Cherkaoui El Moursli; Arturo Tiburcio-Silver; Mohammed Abd-Lefdil

doi:doi:10.11648/j.ijmsa.20150401.17

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AgInSe2 Thin Films Prepared by Electrodeposition Process

Mounir Ait Aouaj, Raquel Diaz, Fouzia Cherkaoui El Moursli, Arturo Tiburcio-Silver, Mohammed Abd-Lefdil

Published in International Journal of Materials Science and Applications (Volume 4, Issue 1)

Received: 29 November 2014 Accepted: 14 December 2014 Published: 26 January 2015

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Abstract

In this work, the one step electrodeposition process was used to prepare Ag-In-Se thin films. The films were deposited at room temperature from a bath containing 1-3x10-3 M AgNO3, 6x10-2 M InCl3 and 3x10-2 M of H2SeO3. The KSCN at a concentration of 0.681 M was used as complexing agent. The pH value of the solution was 1.4. Applied potentials to SCE were chosen between -0.3 V and -1.1 V. Films were deposited onto molybdenum/glass and ITO/glass substrates. We showed that the films’ compositions are strongly function of the growth conditions. Heat treatment at 320 °C during 30 minutes under nitrogen led to AgInSe2 chalcopyrite p-type semiconductor. Also, the morphology and crystallinity of the films is improved by annealing. AgInSe2 films deposited on indium tin oxide showed a band gap value of about 1.24 eV.

Published in	International Journal of Materials Science and Applications (Volume 4, Issue 1)
DOI	10.11648/j.ijmsa.20150401.17
Page(s)	35-38
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2015. Published by Science Publishing Group

Keywords

Thin Films, Electrodeposition, AgInSe2, Physical Properties

References

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APA Style

Mounir Ait Aouaj, Raquel Diaz, Fouzia Cherkaoui El Moursli, Arturo Tiburcio-Silver, Mohammed Abd-Lefdil. (2015). AgInSe2 Thin Films Prepared by Electrodeposition Process. International Journal of Materials Science and Applications, 4(1), 35-38. https://doi.org/10.11648/j.ijmsa.20150401.17

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ACS Style

Mounir Ait Aouaj; Raquel Diaz; Fouzia Cherkaoui El Moursli; Arturo Tiburcio-Silver; Mohammed Abd-Lefdil. AgInSe2 Thin Films Prepared by Electrodeposition Process. Int. J. Mater. Sci. Appl. 2015, 4(1), 35-38. doi: 10.11648/j.ijmsa.20150401.17

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AMA Style

Mounir Ait Aouaj, Raquel Diaz, Fouzia Cherkaoui El Moursli, Arturo Tiburcio-Silver, Mohammed Abd-Lefdil. AgInSe2 Thin Films Prepared by Electrodeposition Process. Int J Mater Sci Appl. 2015;4(1):35-38. doi: 10.11648/j.ijmsa.20150401.17

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@article{10.11648/j.ijmsa.20150401.17,
  author = {Mounir Ait Aouaj and Raquel Diaz and Fouzia Cherkaoui El Moursli and Arturo Tiburcio-Silver and Mohammed Abd-Lefdil},
  title = {AgInSe2 Thin Films Prepared by Electrodeposition Process},
  journal = {International Journal of Materials Science and Applications},
  volume = {4},
  number = {1},
  pages = {35-38},
  doi = {10.11648/j.ijmsa.20150401.17},
  url = {https://doi.org/10.11648/j.ijmsa.20150401.17},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20150401.17},
  abstract = {In this work, the one step electrodeposition process was used to prepare Ag-In-Se thin films. The films were deposited at room temperature from a bath containing 1-3x10-3 M AgNO3, 6x10-2 M InCl3 and 3x10-2 M of H2SeO3. The KSCN at a concentration of 0.681 M was used as complexing agent. The pH value of the solution was 1.4. Applied potentials to SCE were chosen between -0.3 V and -1.1 V. Films were deposited onto molybdenum/glass and ITO/glass substrates. We showed that the films’ compositions are strongly function of the growth conditions. Heat treatment at 320 °C during 30 minutes under nitrogen led to AgInSe2 chalcopyrite p-type semiconductor. Also, the morphology and crystallinity of the films is improved by annealing. AgInSe2 films deposited on indium tin oxide showed a band gap value of about 1.24 eV.},
 year = {2015}
}

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TY  - JOUR
T1  - AgInSe2 Thin Films Prepared by Electrodeposition Process
AU  - Mounir Ait Aouaj
AU  - Raquel Diaz
AU  - Fouzia Cherkaoui El Moursli
AU  - Arturo Tiburcio-Silver
AU  - Mohammed Abd-Lefdil
Y1  - 2015/01/26
PY  - 2015
N1  - https://doi.org/10.11648/j.ijmsa.20150401.17
DO  - 10.11648/j.ijmsa.20150401.17
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 35
EP  - 38
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20150401.17
AB  - In this work, the one step electrodeposition process was used to prepare Ag-In-Se thin films. The films were deposited at room temperature from a bath containing 1-3x10-3 M AgNO3, 6x10-2 M InCl3 and 3x10-2 M of H2SeO3. The KSCN at a concentration of 0.681 M was used as complexing agent. The pH value of the solution was 1.4. Applied potentials to SCE were chosen between -0.3 V and -1.1 V. Films were deposited onto molybdenum/glass and ITO/glass substrates. We showed that the films’ compositions are strongly function of the growth conditions. Heat treatment at 320 °C during 30 minutes under nitrogen led to AgInSe2 chalcopyrite p-type semiconductor. Also, the morphology and crystallinity of the films is improved by annealing. AgInSe2 films deposited on indium tin oxide showed a band gap value of about 1.24 eV.
VL  - 4
IS  - 1
ER  -

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Author Information

Mounir Ait Aouaj

Laboratoire de Physique des Matériaux, Université Mohammed V, B.P. 1014, Rabat, Morocco
Raquel Diaz

Departamento de Física Aplicada C-XII, Universidad Autónoma de Madrid, Madrid, Spain
Fouzia Cherkaoui El Moursli

Equipe Batteries Lithium et Dép?ts Electrolytiques, Faculté des Sciences, B.P. 1014, Rabat, Morocco
Arturo Tiburcio-Silver

Apartado Postal 20, 52176, Metepec 3, Estado de México, México
Mohammed Abd-Lefdil

Laboratoire de Physique des Matériaux, Université Mohammed V, B.P. 1014, Rabat, Morocco

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APA Style

Mounir Ait Aouaj, Raquel Diaz, Fouzia Cherkaoui El Moursli, Arturo Tiburcio-Silver, Mohammed Abd-Lefdil. (2015). AgInSe2 Thin Films Prepared by Electrodeposition Process. International Journal of Materials Science and Applications, 4(1), 35-38. https://doi.org/10.11648/j.ijmsa.20150401.17

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ACS Style

Mounir Ait Aouaj; Raquel Diaz; Fouzia Cherkaoui El Moursli; Arturo Tiburcio-Silver; Mohammed Abd-Lefdil. AgInSe2 Thin Films Prepared by Electrodeposition Process. Int. J. Mater. Sci. Appl. 2015, 4(1), 35-38. doi: 10.11648/j.ijmsa.20150401.17

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AMA Style

Mounir Ait Aouaj, Raquel Diaz, Fouzia Cherkaoui El Moursli, Arturo Tiburcio-Silver, Mohammed Abd-Lefdil. AgInSe2 Thin Films Prepared by Electrodeposition Process. Int J Mater Sci Appl. 2015;4(1):35-38. doi: 10.11648/j.ijmsa.20150401.17

Copy | Download

@article{10.11648/j.ijmsa.20150401.17,
  author = {Mounir Ait Aouaj and Raquel Diaz and Fouzia Cherkaoui El Moursli and Arturo Tiburcio-Silver and Mohammed Abd-Lefdil},
  title = {AgInSe2 Thin Films Prepared by Electrodeposition Process},
  journal = {International Journal of Materials Science and Applications},
  volume = {4},
  number = {1},
  pages = {35-38},
  doi = {10.11648/j.ijmsa.20150401.17},
  url = {https://doi.org/10.11648/j.ijmsa.20150401.17},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20150401.17},
  abstract = {In this work, the one step electrodeposition process was used to prepare Ag-In-Se thin films. The films were deposited at room temperature from a bath containing 1-3x10-3 M AgNO3, 6x10-2 M InCl3 and 3x10-2 M of H2SeO3. The KSCN at a concentration of 0.681 M was used as complexing agent. The pH value of the solution was 1.4. Applied potentials to SCE were chosen between -0.3 V and -1.1 V. Films were deposited onto molybdenum/glass and ITO/glass substrates. We showed that the films’ compositions are strongly function of the growth conditions. Heat treatment at 320 °C during 30 minutes under nitrogen led to AgInSe2 chalcopyrite p-type semiconductor. Also, the morphology and crystallinity of the films is improved by annealing. AgInSe2 films deposited on indium tin oxide showed a band gap value of about 1.24 eV.},
 year = {2015}
}

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TY  - JOUR
T1  - AgInSe2 Thin Films Prepared by Electrodeposition Process
AU  - Mounir Ait Aouaj
AU  - Raquel Diaz
AU  - Fouzia Cherkaoui El Moursli
AU  - Arturo Tiburcio-Silver
AU  - Mohammed Abd-Lefdil
Y1  - 2015/01/26
PY  - 2015
N1  - https://doi.org/10.11648/j.ijmsa.20150401.17
DO  - 10.11648/j.ijmsa.20150401.17
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 35
EP  - 38
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20150401.17
AB  - In this work, the one step electrodeposition process was used to prepare Ag-In-Se thin films. The films were deposited at room temperature from a bath containing 1-3x10-3 M AgNO3, 6x10-2 M InCl3 and 3x10-2 M of H2SeO3. The KSCN at a concentration of 0.681 M was used as complexing agent. The pH value of the solution was 1.4. Applied potentials to SCE were chosen between -0.3 V and -1.1 V. Films were deposited onto molybdenum/glass and ITO/glass substrates. We showed that the films’ compositions are strongly function of the growth conditions. Heat treatment at 320 °C during 30 minutes under nitrogen led to AgInSe2 chalcopyrite p-type semiconductor. Also, the morphology and crystallinity of the films is improved by annealing. AgInSe2 films deposited on indium tin oxide showed a band gap value of about 1.24 eV.
VL  - 4
IS  - 1
ER  -

Copy | Download