Effect of Light Intensity on the I-V Characteristics of LaF3/Porous-Silicon Structure Prepared by Chemical Bath Deposition Technique

Md. Hafijur Rahman; Abu Bakar Md. Ismail

doi:doi:10.11648/j.ijmsa.20150401.16

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Effect of Light Intensity on the I-V Characteristics of LaF3/Porous-Silicon Structure Prepared by Chemical Bath Deposition Technique

Md. Hafijur Rahman, Abu Bakar Md. Ismail

Published in International Journal of Materials Science and Applications (Volume 4, Issue 1)

Received: 14 November 2014 Accepted: 27 November 2014 Published: 26 January 2015

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Abstract

Effect of Light intensity on the I-V characteristics of LaF3/PS heterojunction has been investigated in this report. LaF3 layers have been deposited by a novel chemical bath deposition (CBD) technique. With this simple technique LaF3 produced as LaCl3 are made to react with hydrofluoric (HF) acid on the porous silicon substrate. This enables direct deposition of LaF3 on the pore walls of the porous silicon leading to a successful passivation of PS. The compositions of the deposited LaF3 were confirmed by Energy Dispersive of X-ray (EDX) analysis. The current increases with light intensity. From the experimental results it can be concluded that lanthanum fluorides can be deposited on the PS surface by the CBD technique, which provides the required passivation for PS. This passivation can enable the PS to be considered as an important material for photonics.

Published in	International Journal of Materials Science and Applications (Volume 4, Issue 1)
DOI	10.11648/j.ijmsa.20150401.16
Page(s)	31-34
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2015. Published by Science Publishing Group

Keywords

Porous Silicon, Passivation, Photonics, Chemical Bath Deposition (CBD), Light Intensity

References

[1]	T.Pilvi, E. Puukilainen, K. Arstila, M. Leskela, and M. Ritala, “ Atomic Layer Deposition of LaF3 Thin Films using La(thd)3 and TiF4 as Precursors” che. Vap. Deposition,14, 85-91,(2008).
[2]	Boukherroub R et al. (2000). “Thermal route for chemical modification and photoluminescence stabilization of porous silicon”, Phys. Stat. Sol. (A), 182, 117-121.
[3]	Andrea Edit Pap, Faculty of Technology, University of oulu, P.O. Box 4000, FIN-90014 University of oulu Finland.(http://herkules.oulu.fi/isbn9514277759/).
[4]	Yimin Fan, School of Materials Science and Engineering, Shanghai University Shanghai 201 800, China.
[5]	R.H. Hopkins, R.A. Hoffman, W.E. Kramer, Appl.Opt 14, (1975), 2631.
[6]	Abdul Al Mortuza, Md. Hafijur Rahman, Sinthia Shabnam Mou, Md. JulkarNain and Abu Bakar Md. Ismail, "Passivation of Porous Silicon by LaF3 Using a Simple Single-Source Chemical Bath Technique", International Journal of Materials and Chemistry, Vol.2, No.4, August 2012, pp 111-115 .
[7]	A. Halimaoui ‘Porous silicon formation by anodisation’. In: Properties of porous silicon, ed. by L.T. Chanham (IEE INSPEC, The Institution of Electrical Engineers, London) (1997) 12-13.
[8]	Patnaik P (2002). “Handbook of Inorganic Chemicals”, McGraw-Hill Professional, New York. 448.
[9]	Herino R (2000). “Nanocomposite materials from porous silicon”, Mater. Sc. Eng. B, 69–70, 70–76.

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Md. Hafijur Rahman, Abu Bakar Md. Ismail. (2015). Effect of Light Intensity on the I-V Characteristics of LaF3/Porous-Silicon Structure Prepared by Chemical Bath Deposition Technique. International Journal of Materials Science and Applications, 4(1), 31-34. https://doi.org/10.11648/j.ijmsa.20150401.16

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ACS Style

Md. Hafijur Rahman; Abu Bakar Md. Ismail. Effect of Light Intensity on the I-V Characteristics of LaF3/Porous-Silicon Structure Prepared by Chemical Bath Deposition Technique. Int. J. Mater. Sci. Appl. 2015, 4(1), 31-34. doi: 10.11648/j.ijmsa.20150401.16

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AMA Style

Md. Hafijur Rahman, Abu Bakar Md. Ismail. Effect of Light Intensity on the I-V Characteristics of LaF3/Porous-Silicon Structure Prepared by Chemical Bath Deposition Technique. Int J Mater Sci Appl. 2015;4(1):31-34. doi: 10.11648/j.ijmsa.20150401.16

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@article{10.11648/j.ijmsa.20150401.16,
  author = {Md. Hafijur Rahman and Abu Bakar Md. Ismail},
  title = {Effect of Light Intensity on the I-V Characteristics of LaF3/Porous-Silicon Structure Prepared by Chemical Bath Deposition Technique},
  journal = {International Journal of Materials Science and Applications},
  volume = {4},
  number = {1},
  pages = {31-34},
  doi = {10.11648/j.ijmsa.20150401.16},
  url = {https://doi.org/10.11648/j.ijmsa.20150401.16},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20150401.16},
  abstract = {Effect of Light intensity on the I-V characteristics of LaF3/PS heterojunction has been investigated in this report. LaF3 layers have been deposited by a novel chemical bath deposition (CBD) technique. With this simple technique LaF3 produced as LaCl3 are made to react with hydrofluoric (HF) acid on the porous silicon substrate. This enables direct deposition of LaF3 on the pore walls of the porous silicon leading to a successful passivation of PS. The compositions of the deposited LaF3 were confirmed by Energy Dispersive of X-ray (EDX) analysis. The current increases with light intensity. From the experimental results it can be concluded that lanthanum fluorides can be deposited on the PS surface by the CBD technique, which provides the required passivation for PS. This passivation can enable the PS to be considered as an important material for photonics.},
 year = {2015}
}

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TY - JOUR
T1 - Effect of Light Intensity on the I-V Characteristics of LaF3/Porous-Silicon Structure Prepared by Chemical Bath Deposition Technique
AU - Md. Hafijur Rahman
AU - Abu Bakar Md. Ismail
Y1 - 2015/01/26
PY - 2015
N1 - https://doi.org/10.11648/j.ijmsa.20150401.16
DO - 10.11648/j.ijmsa.20150401.16
T2 - International Journal of Materials Science and Applications
JF - International Journal of Materials Science and Applications
JO - International Journal of Materials Science and Applications
SP - 31
EP - 34
PB - Science Publishing Group
SN - 2327-2643
UR - https://doi.org/10.11648/j.ijmsa.20150401.16
AB - Effect of Light intensity on the I-V characteristics of LaF3/PS heterojunction has been investigated in this report. LaF3 layers have been deposited by a novel chemical bath deposition (CBD) technique. With this simple technique LaF3 produced as LaCl3 are made to react with hydrofluoric (HF) acid on the porous silicon substrate. This enables direct deposition of LaF3 on the pore walls of the porous silicon leading to a successful passivation of PS. The compositions of the deposited LaF3 were confirmed by Energy Dispersive of X-ray (EDX) analysis. The current increases with light intensity. From the experimental results it can be concluded that lanthanum fluorides can be deposited on the PS surface by the CBD technique, which provides the required passivation for PS. This passivation can enable the PS to be considered as an important material for photonics.
VL - 4
IS - 1
ER -

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Author Information

Md. Hafijur Rahman

Department of Physics, Pabna University of Science and Technology, Pabna-6600, Bangladesh
Abu Bakar Md. Ismail

Department of Applied Physics & Electronic Engineering, University of Rajshahi, Rajshahi-6205, Bangladesh

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APA Style

Md. Hafijur Rahman, Abu Bakar Md. Ismail. (2015). Effect of Light Intensity on the I-V Characteristics of LaF3/Porous-Silicon Structure Prepared by Chemical Bath Deposition Technique. International Journal of Materials Science and Applications, 4(1), 31-34. https://doi.org/10.11648/j.ijmsa.20150401.16

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ACS Style

Md. Hafijur Rahman; Abu Bakar Md. Ismail. Effect of Light Intensity on the I-V Characteristics of LaF3/Porous-Silicon Structure Prepared by Chemical Bath Deposition Technique. Int. J. Mater. Sci. Appl. 2015, 4(1), 31-34. doi: 10.11648/j.ijmsa.20150401.16

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AMA Style

Md. Hafijur Rahman, Abu Bakar Md. Ismail. Effect of Light Intensity on the I-V Characteristics of LaF3/Porous-Silicon Structure Prepared by Chemical Bath Deposition Technique. Int J Mater Sci Appl. 2015;4(1):31-34. doi: 10.11648/j.ijmsa.20150401.16

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@article{10.11648/j.ijmsa.20150401.16,
  author = {Md. Hafijur Rahman and Abu Bakar Md. Ismail},
  title = {Effect of Light Intensity on the I-V Characteristics of LaF3/Porous-Silicon Structure Prepared by Chemical Bath Deposition Technique},
  journal = {International Journal of Materials Science and Applications},
  volume = {4},
  number = {1},
  pages = {31-34},
  doi = {10.11648/j.ijmsa.20150401.16},
  url = {https://doi.org/10.11648/j.ijmsa.20150401.16},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20150401.16},
  abstract = {Effect of Light intensity on the I-V characteristics of LaF3/PS heterojunction has been investigated in this report. LaF3 layers have been deposited by a novel chemical bath deposition (CBD) technique. With this simple technique LaF3 produced as LaCl3 are made to react with hydrofluoric (HF) acid on the porous silicon substrate. This enables direct deposition of LaF3 on the pore walls of the porous silicon leading to a successful passivation of PS. The compositions of the deposited LaF3 were confirmed by Energy Dispersive of X-ray (EDX) analysis. The current increases with light intensity. From the experimental results it can be concluded that lanthanum fluorides can be deposited on the PS surface by the CBD technique, which provides the required passivation for PS. This passivation can enable the PS to be considered as an important material for photonics.},
 year = {2015}
}

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