Cracked die is a serious failure mode in Light Emitting Diode (LED) industry – affecting the LED quality and long-term reliability performance. In this paper, an investigation has been carried out to find out a relation between die bonding force and the occurrence of die crack at Germanium (Ge) substrate due to die attach (DA) ejector pin indentation. Based on the analysis, the results show that cracks start to occur at 60 gram-force (gF) bond force and above. The crack length at the die substrate increases with respect to the bond force. These indented dies were further analyzed by using Scanning Electron Microscope (SEM). The results show plastic deformation, slip traces and material pile-up at the vicinity of ejector pin crater. Some samples were sectioned using Focus Ion Beam (FIB) and it was found the crack depth does not exceed beyond 20.5μm and it follows the (111) plane. These findings, concludes that cracks start to appear at 60gF and they are confined to surface level even indented at extreme load (140gF). These cracks are far away from the active region of LED.
| Published in | International Journal of Materials Science and Applications (Volume 4, Issue 1) |
| DOI | 10.11648/j.ijmsa.20150401.11 |
| Page(s) | 1-7 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2014. Published by Science Publishing Group |
Crack Die, LED Reliability, Bond Force Indentation, Ge (Germanium), Ejector Pin, Stress, Surface Deformation, Slip-Trace
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APA Style
Luruthudass Annaniah, Mutharasu Devarajan. (2014). Analysis of Crack Formation in Germanium Substrate at AlInGaP Die Bonding Process. International Journal of Materials Science and Applications, 4(1), 1-7. https://doi.org/10.11648/j.ijmsa.20150401.11
ACS Style
Luruthudass Annaniah; Mutharasu Devarajan. Analysis of Crack Formation in Germanium Substrate at AlInGaP Die Bonding Process. Int. J. Mater. Sci. Appl. 2014, 4(1), 1-7. doi: 10.11648/j.ijmsa.20150401.11
AMA Style
Luruthudass Annaniah, Mutharasu Devarajan. Analysis of Crack Formation in Germanium Substrate at AlInGaP Die Bonding Process. Int J Mater Sci Appl. 2014;4(1):1-7. doi: 10.11648/j.ijmsa.20150401.11
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Download@article{10.11648/j.ijmsa.20150401.11,
author = {Luruthudass Annaniah and Mutharasu Devarajan},
title = {Analysis of Crack Formation in Germanium Substrate at AlInGaP Die Bonding Process},
journal = {International Journal of Materials Science and Applications},
volume = {4},
number = {1},
pages = {1-7},
doi = {10.11648/j.ijmsa.20150401.11},
url = {https://doi.org/10.11648/j.ijmsa.20150401.11},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20150401.11},
abstract = {Cracked die is a serious failure mode in Light Emitting Diode (LED) industry – affecting the LED quality and long-term reliability performance. In this paper, an investigation has been carried out to find out a relation between die bonding force and the occurrence of die crack at Germanium (Ge) substrate due to die attach (DA) ejector pin indentation. Based on the analysis, the results show that cracks start to occur at 60 gram-force (gF) bond force and above. The crack length at the die substrate increases with respect to the bond force. These indented dies were further analyzed by using Scanning Electron Microscope (SEM). The results show plastic deformation, slip traces and material pile-up at the vicinity of ejector pin crater. Some samples were sectioned using Focus Ion Beam (FIB) and it was found the crack depth does not exceed beyond 20.5μm and it follows the (111) plane. These findings, concludes that cracks start to appear at 60gF and they are confined to surface level even indented at extreme load (140gF). These cracks are far away from the active region of LED.},
year = {2014}
}
TY - JOUR T1 - Analysis of Crack Formation in Germanium Substrate at AlInGaP Die Bonding Process AU - Luruthudass Annaniah AU - Mutharasu Devarajan Y1 - 2014/12/18 PY - 2014 N1 - https://doi.org/10.11648/j.ijmsa.20150401.11 DO - 10.11648/j.ijmsa.20150401.11 T2 - International Journal of Materials Science and Applications JF - International Journal of Materials Science and Applications JO - International Journal of Materials Science and Applications SP - 1 EP - 7 PB - Science Publishing Group SN - 2327-2643 UR - https://doi.org/10.11648/j.ijmsa.20150401.11 AB - Cracked die is a serious failure mode in Light Emitting Diode (LED) industry – affecting the LED quality and long-term reliability performance. In this paper, an investigation has been carried out to find out a relation between die bonding force and the occurrence of die crack at Germanium (Ge) substrate due to die attach (DA) ejector pin indentation. Based on the analysis, the results show that cracks start to occur at 60 gram-force (gF) bond force and above. The crack length at the die substrate increases with respect to the bond force. These indented dies were further analyzed by using Scanning Electron Microscope (SEM). The results show plastic deformation, slip traces and material pile-up at the vicinity of ejector pin crater. Some samples were sectioned using Focus Ion Beam (FIB) and it was found the crack depth does not exceed beyond 20.5μm and it follows the (111) plane. These findings, concludes that cracks start to appear at 60gF and they are confined to surface level even indented at extreme load (140gF). These cracks are far away from the active region of LED. VL - 4 IS - 1 ER -
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