Interaction of an Ultra-Short Laser Pulse and Ultra-Intense with a Dielectric

Oussama Boultif; Slimen Belghit; Beddiaf Zaidi; Abdelaziz Sid

doi:doi:10.11648/j.ajn.20180403.11

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Interaction of an Ultra-Short Laser Pulse and Ultra-Intense with a Dielectric

Oussama Boultif, Slimen Belghit, Beddiaf Zaidi, Abdelaziz Sid

Published in American Journal of Nanosciences (Volume 4, Issue 3)

Received: 6 September 2018 Accepted: 17 September 2018 Published: 7 November 2018

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Abstract

In this work, we dedicated to the presentation of our results concerning the evolution of the electron density in the conduction band and the optical damage threshold (OBT). A study of the influence of the initial electronic density on the electron density in the conduction band and on the threshold of optical damage will also be presented. The main objective of this work is the theoretical study of optical damage of dielectric Materials like: Silicate by using a technique based on ultra-short and high-density laser pulses. The mains theoretical models about the OBT technique given in the literature are also studied. A new theoretical model with several improvements is proposed. This model takes into account the recombination’s mechanism with three holes. New numerical software has been developed in order to solve the PDE systems of our theoretical model using MATLAB simulation. The contribution of different mechanisms with OBT has been studied numerically. The obtained results showed that recombination mechanism with three holes plays an important role to estimate the density of free electrons and the OBT. We showed in our model that the recombination mechanisms reduce the electron density in the band of conduction is therefore increasing the threshold of optical damage (OBT). The predictions of the code developed in this study have been successfully compared to different experimental measurements of thresholds of breakdown in silica. The found results have a good agreement with experimental results.

Published in	American Journal of Nanosciences (Volume 4, Issue 3)
DOI	10.11648/j.ajn.20180403.11
Page(s)	26-34
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2018. Published by Science Publishing Group

Keywords

Dielectrics, Optical Breakdown Threshold, Ultra-Short Laser Pulse, Laser-Dielectric Interaction

References

[1]	G. Mourou, Appl Phys B, 65:205–211 (1997).
[2]	L. V. Keldysh, Sov Phy JETP 20:1307 (1965).
[3]	B. C. Stuart, M. D. Feit, S. Herman, A. M. Rubenchik, B. W. Shore, M. D. Perry, Phys Rev B, 53:1749. (1996).
[4]	B. C. Stuart, M. D. Feit, S. Herman, A. M. Rubenchik, B. W. Shore, M. D. Perry J Opt Soc Am B 13: 459 (1996).
[5]	G. G. Eugene and L. D. Barry, Phys Rev B 73: 214101 (2006).
[6]	P. Yuri, Raizer, Gas Discharge Physics: Springer-Verlag Berlin Heidelberg (1991).
[7]	Y. B. Zel'dovich and Y. P. Raizer Physics of Shock Waves and High-Temperature Hydrodynamic Phenomena, academic press New York and London (1967).
[8]	L. Bergé, S. Skupin, R. Nuter, J. Kasparian, J. P. Wolf, Phys Rev Lett 92: 225002 (2004).
[9]	S. S. Mao, F. Quéré, S. Guizard, X. Mao, R. E. Russo, G. petite, P. Martin, Appl Phys A 79: 1695–1709 (2004).
[10]	S. Guizard, P. Martin, G. Petite, P. D’Oliveiraz, P. Meynadier, J Phys Condens Matter 8:1281–1290 (1996).
[11]	P. Martin, S. Guizard, Ph. Daguzan, H. Petite, Phys Rev B 55: 5799 (1997).
[12]	F. Quéré, S. Guizard, P. Martin, G. Petite, O. Gobert, P. Meynadier, M. Perdrix, Appl Phys B 68: 459–463 (1999).
[13]	W. Joosen, S. Guizard, P. Martin, Appl Phys Lett 61: 2260 (1992).
[14]	B. C. Stuart, M. D. Feit, S. Herman, A. M. Rubenchik, B. W. Shore, M. D. Perry, Phy Rev Lett 74: 2248 (1995).
[15]	C. W. Gear Numerical Initial Value Problems in Ordinary Differential Equations, Englewood Cliffs, NJ: Prentice-Hall (1971).
[16]	A. C. Tien, S. Backus, H. Kapteyn, M. Murnane, G. Mourou, Phys Rev Lett 82: 3883 (1999).
[17]	O. Boultif, S. Belghit, A. Sid, interaction lasers avec un diélectriques (Lasers ultracourtes) Editions Universitaires Européennes (2017).

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Oussama Boultif, Slimen Belghit, Beddiaf Zaidi, Abdelaziz Sid. (2018). Interaction of an Ultra-Short Laser Pulse and Ultra-Intense with a Dielectric. American Journal of Nanosciences, 4(3), 26-34. https://doi.org/10.11648/j.ajn.20180403.11

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ACS Style

Oussama Boultif; Slimen Belghit; Beddiaf Zaidi; Abdelaziz Sid. Interaction of an Ultra-Short Laser Pulse and Ultra-Intense with a Dielectric. Am. J. Nanosci. 2018, 4(3), 26-34. doi: 10.11648/j.ajn.20180403.11

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AMA Style

Oussama Boultif, Slimen Belghit, Beddiaf Zaidi, Abdelaziz Sid. Interaction of an Ultra-Short Laser Pulse and Ultra-Intense with a Dielectric. Am J Nanosci. 2018;4(3):26-34. doi: 10.11648/j.ajn.20180403.11

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@article{10.11648/j.ajn.20180403.11,
  author = {Oussama Boultif and Slimen Belghit and Beddiaf Zaidi and Abdelaziz Sid},
  title = {Interaction of an Ultra-Short Laser Pulse and Ultra-Intense with a Dielectric},
  journal = {American Journal of Nanosciences},
  volume = {4},
  number = {3},
  pages = {26-34},
  doi = {10.11648/j.ajn.20180403.11},
  url = {https://doi.org/10.11648/j.ajn.20180403.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajn.20180403.11},
  abstract = {In this work, we dedicated to the presentation of our results concerning the evolution of the electron density in the conduction band and the optical damage threshold (OBT). A study of the influence of the initial electronic density on the electron density in the conduction band and on the threshold of optical damage will also be presented. The main objective of this work is the theoretical study of optical damage of dielectric Materials like: Silicate by using a technique based on ultra-short and high-density laser pulses. The mains theoretical models about the OBT technique given in the literature are also studied. A new theoretical model with several improvements is proposed. This model takes into account the recombination’s mechanism with three holes. New numerical software has been developed in order to solve the PDE systems of our theoretical model using MATLAB simulation. The contribution of different mechanisms with OBT has been studied numerically. The obtained results showed that recombination mechanism with three holes plays an important role to estimate the density of free electrons and the OBT. We showed in our model that the recombination mechanisms reduce the electron density in the band of conduction is therefore increasing the threshold of optical damage (OBT). The predictions of the code developed in this study have been successfully compared to different experimental measurements of thresholds of breakdown in silica. The found results have a good agreement with experimental results.},
 year = {2018}
}

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TY - JOUR
T1 - Interaction of an Ultra-Short Laser Pulse and Ultra-Intense with a Dielectric
AU - Oussama Boultif
AU - Slimen Belghit
AU - Beddiaf Zaidi
AU - Abdelaziz Sid
Y1 - 2018/11/07
PY - 2018
N1 - https://doi.org/10.11648/j.ajn.20180403.11
DO - 10.11648/j.ajn.20180403.11
T2 - American Journal of Nanosciences
JF - American Journal of Nanosciences
JO - American Journal of Nanosciences
SP - 26
EP - 34
PB - Science Publishing Group
SN - 2575-4858
UR - https://doi.org/10.11648/j.ajn.20180403.11
AB - In this work, we dedicated to the presentation of our results concerning the evolution of the electron density in the conduction band and the optical damage threshold (OBT). A study of the influence of the initial electronic density on the electron density in the conduction band and on the threshold of optical damage will also be presented. The main objective of this work is the theoretical study of optical damage of dielectric Materials like: Silicate by using a technique based on ultra-short and high-density laser pulses. The mains theoretical models about the OBT technique given in the literature are also studied. A new theoretical model with several improvements is proposed. This model takes into account the recombination’s mechanism with three holes. New numerical software has been developed in order to solve the PDE systems of our theoretical model using MATLAB simulation. The contribution of different mechanisms with OBT has been studied numerically. The obtained results showed that recombination mechanism with three holes plays an important role to estimate the density of free electrons and the OBT. We showed in our model that the recombination mechanisms reduce the electron density in the band of conduction is therefore increasing the threshold of optical damage (OBT). The predictions of the code developed in this study have been successfully compared to different experimental measurements of thresholds of breakdown in silica. The found results have a good agreement with experimental results.
VL - 4
IS - 3
ER -

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Author Information

Oussama Boultif

PRIMALAB Laboratory, Department of Physics, Faculty of Material Sciences, University of Batna1, Batna, Algeria
Slimen Belghit

PRIMALAB Laboratory, Department of Physics, Faculty of Material Sciences, University of Batna1, Batna, Algeria
Beddiaf Zaidi

PRIMALAB Laboratory, Department of Physics, Faculty of Material Sciences, University of Batna1, Batna, Algeria
Abdelaziz Sid

PRIMALAB Laboratory, Department of Physics, Faculty of Material Sciences, University of Batna1, Batna, Algeria

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APA Style

Oussama Boultif, Slimen Belghit, Beddiaf Zaidi, Abdelaziz Sid. (2018). Interaction of an Ultra-Short Laser Pulse and Ultra-Intense with a Dielectric. American Journal of Nanosciences, 4(3), 26-34. https://doi.org/10.11648/j.ajn.20180403.11

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ACS Style

Oussama Boultif; Slimen Belghit; Beddiaf Zaidi; Abdelaziz Sid. Interaction of an Ultra-Short Laser Pulse and Ultra-Intense with a Dielectric. Am. J. Nanosci. 2018, 4(3), 26-34. doi: 10.11648/j.ajn.20180403.11

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AMA Style

Oussama Boultif, Slimen Belghit, Beddiaf Zaidi, Abdelaziz Sid. Interaction of an Ultra-Short Laser Pulse and Ultra-Intense with a Dielectric. Am J Nanosci. 2018;4(3):26-34. doi: 10.11648/j.ajn.20180403.11

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@article{10.11648/j.ajn.20180403.11,
  author = {Oussama Boultif and Slimen Belghit and Beddiaf Zaidi and Abdelaziz Sid},
  title = {Interaction of an Ultra-Short Laser Pulse and Ultra-Intense with a Dielectric},
  journal = {American Journal of Nanosciences},
  volume = {4},
  number = {3},
  pages = {26-34},
  doi = {10.11648/j.ajn.20180403.11},
  url = {https://doi.org/10.11648/j.ajn.20180403.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajn.20180403.11},
  abstract = {In this work, we dedicated to the presentation of our results concerning the evolution of the electron density in the conduction band and the optical damage threshold (OBT). A study of the influence of the initial electronic density on the electron density in the conduction band and on the threshold of optical damage will also be presented. The main objective of this work is the theoretical study of optical damage of dielectric Materials like: Silicate by using a technique based on ultra-short and high-density laser pulses. The mains theoretical models about the OBT technique given in the literature are also studied. A new theoretical model with several improvements is proposed. This model takes into account the recombination’s mechanism with three holes. New numerical software has been developed in order to solve the PDE systems of our theoretical model using MATLAB simulation. The contribution of different mechanisms with OBT has been studied numerically. The obtained results showed that recombination mechanism with three holes plays an important role to estimate the density of free electrons and the OBT. We showed in our model that the recombination mechanisms reduce the electron density in the band of conduction is therefore increasing the threshold of optical damage (OBT). The predictions of the code developed in this study have been successfully compared to different experimental measurements of thresholds of breakdown in silica. The found results have a good agreement with experimental results.},
 year = {2018}
}

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