Numerical Simulation of CuInSe<sub>2</sub> (CIS) Thin Film Solar Cell with (ZnO, ZnO:F) Buffer Layers

T. Belal; R. Tala-Ighil Zair; F. Ghezal

doi:doi:10.11648/j.ajn.20170303.14

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Numerical Simulation of CuInSe₂ (CIS) Thin Film Solar Cell with (ZnO, ZnO:F) Buffer Layers

T. Belal, R. Tala-Ighil Zair, F. Ghezal

Published in American Journal of Nanosciences (Volume 3, Issue 3)

Received: 8 April 2017 Accepted: 14 August 2017 Published: 23 October 2017

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Abstract

This study focuses on the solar cells based on CIS simulation with buffer layer zinc oxide (ZnO) and fluorine-doped zinc oxide (ZnO:F). ZnO is a multifunctional material with several applications in electronics and photovoltaics, with multiple possibilities of synthesis involve inexpensive methods. ZnO (ZnO:F) is a prominent candidate to be an alternative buffer layer to so-called toxic cadmium sulphide (CdS) in CIS based solar cells. A promising result has been achieved with an efficiency of 22% with Voc = 0.565 V, Jsc = 45 mA/cm² and fill factor = 82% by using ZnO (ZnO:F) as a buffer layer. It is also found that the high efficiency of CIS absorber layer thickness is between 1500nm and 2000nm. Our results are in good agreement with those reported in the literature from experiments.

Published in	American Journal of Nanosciences (Volume 3, Issue 3)
DOI	10.11648/j.ajn.20170303.14
Page(s)	53-58
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2017. Published by Science Publishing Group

Keywords

CIS, ZnO, ZnO:F, SCAPS, Buffer Layer

References

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[5]	Kanevce, A. (2007). Anticipated performance of Cu (In, Ga) Se₂ solar cells in the thin-film limit (Doctoral dissertation, Colorado State University).
[6]	Malm, U., Malmström, J., Platzer-Björkman, C., & Stolt, L. (2005). Determination of dominant recombination paths in Cu (In, Ga)Se₂thin-film solar cells with ALD–ZnO buffer layers. Thin Solid Films, 480-481, 208-212. doi:10.1016/j.tsf.2004.11.008
[7]	Gloeckler, M., Sites, J. R., & Metzger, W. K. (2005). Grain-boundary recombination in Cu (In, Ga)Se₂ solar cells. Journal of Applied Physics, 98(11), 113704. doi:10.1063/1.2133906
[8]	Gloecker, M. (2005). Device Physics of Cu (In, Ga)Se₂ Thin-film Solar Cells (Doctoral dissertation).
[9]	Tala Ighil, R., Iratni, A., Arabi, N., Bensouici, F., & Slimani, A. (2012, February). Effect of CdS Replacement by Cd-free buffer layer onto (CIS) solarcell. Paper presented at International Work Shop on Advanced Materials IWAM 2012, Ras Al Khaimah, United Arab Emirates.
[10]	Montes-Monsalve, J., Morales-Acevedo, A., Bernal-Correa, R., & Pulzara-Mora, A. (2016). Characterization of CuInSe₂ thin films obtained by rf magnetron co-sputtering from CuSe and in targets. chalcogenide letters, 13(8), 381-388. Retrieved from http://www.chalcogen.ro/381_MontesMJI.pdf
[11]	Guillen-Santiago, A., De la L. Olvera, M., Maldonado, A., Asomoza, R., & Acosta, D. R. (2004). Electrical, structural and morphological properties of chemically sprayed F-doped ZnO films: effect of the ageing-time of the starting solution, solvent and substrate temperature. physica status solidi (a), 201(5), 952-959. doi:10.1002/pssa.200306727
[12]	Lindahl, J., Keller, J., Donzel-Gargand, O., Szaniawski, P., Edoff, M., & Törndahl, T. (2016). Deposition temperature induced conduction band changes in zinc tin oxide buffer layers for Cu (In, Ga)Se₂ solar cells. Solar Energy Materials and Solar Cells, 144, 684-690. doi:10.1016/j.solmat.2015.09.048
[13]	Klinkert, T. (2015). Comprehension and optimisation of the co-evaporation deposition of Cu (In, Ga)Se₂ absorber layers for very high effciency thin film solar cells. Chemical Physics [physics.chem-ph] (Doctoral dissertation, Universite Pierre et Marie Curie - Paris VI).
[14]	Sun, J., Nalla, V., Nguyen, M., Ren, Y., Chiam, S. Y., Wang, Y … Wong, L. H. (2015). Effect of Zn (O, S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe₂ solar cell. Solar Energy, 115, 396-404. doi:10.1016/j.solener.2015.03.008
[15]	Hegedus, S. S., & Shafarman, W. N. (2004). Thin-film solar cells: device measurements and analysis. Progress in Photovoltaics: Research and Applications, 12(23), 155-176. doi:10.1002/pip.518
[16]	Benosman, M., Bouchaour, M., Dujardin, F., Charles, J. P., & Benyoucef, B. (2003). Le Rôle Du Mécanisme de Recombinaison sur Les Performances Photovoltaïques des Cellules Solaires de Type Cu (In, Ga)(S, Se₂). Revue: Energie Renouvelable: ICPWE, 103-106.

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APA Style

T. Belal, R. Tala-Ighil Zair, F. Ghezal. (2017). Numerical Simulation of CuInSe2 (CIS) Thin Film Solar Cell with (ZnO, ZnO:F) Buffer Layers. American Journal of Nanosciences, 3(3), 53-58. https://doi.org/10.11648/j.ajn.20170303.14

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ACS Style

T. Belal; R. Tala-Ighil Zair; F. Ghezal. Numerical Simulation of CuInSe2 (CIS) Thin Film Solar Cell with (ZnO, ZnO:F) Buffer Layers. Am. J. Nanosci. 2017, 3(3), 53-58. doi: 10.11648/j.ajn.20170303.14

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AMA Style

T. Belal, R. Tala-Ighil Zair, F. Ghezal. Numerical Simulation of CuInSe2 (CIS) Thin Film Solar Cell with (ZnO, ZnO:F) Buffer Layers. Am J Nanosci. 2017;3(3):53-58. doi: 10.11648/j.ajn.20170303.14

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@article{10.11648/j.ajn.20170303.14,
  author = {T. Belal and R. Tala-Ighil Zair and F. Ghezal},
  title = {Numerical Simulation of CuInSe2 (CIS) Thin Film Solar Cell with (ZnO, ZnO:F) Buffer Layers},
  journal = {American Journal of Nanosciences},
  volume = {3},
  number = {3},
  pages = {53-58},
  doi = {10.11648/j.ajn.20170303.14},
  url = {https://doi.org/10.11648/j.ajn.20170303.14},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajn.20170303.14},
  abstract = {This study focuses on the solar cells based on CIS simulation with buffer layer zinc oxide (ZnO) and fluorine-doped zinc oxide (ZnO:F). ZnO is a multifunctional material with several applications in electronics and photovoltaics, with multiple possibilities of synthesis involve inexpensive methods. ZnO (ZnO:F) is a prominent candidate to be an alternative buffer layer to so-called toxic cadmium sulphide (CdS) in CIS based solar cells. A promising result has been achieved with an efficiency of 22% with Voc = 0.565 V, Jsc = 45 mA/cm2 and fill factor = 82% by using ZnO (ZnO:F) as a buffer layer. It is also found that the high efficiency of CIS absorber layer thickness is between 1500nm and 2000nm. Our results are in good agreement with those reported in the literature from experiments.},
 year = {2017}
}

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TY  - JOUR
T1  - Numerical Simulation of CuInSe2 (CIS) Thin Film Solar Cell with (ZnO, ZnO:F) Buffer Layers
AU  - T. Belal
AU  - R. Tala-Ighil Zair
AU  - F. Ghezal
Y1  - 2017/10/23
PY  - 2017
N1  - https://doi.org/10.11648/j.ajn.20170303.14
DO  - 10.11648/j.ajn.20170303.14
T2  - American Journal of Nanosciences
JF  - American Journal of Nanosciences
JO  - American Journal of Nanosciences
SP  - 53
EP  - 58
PB  - Science Publishing Group
SN  - 2575-4858
UR  - https://doi.org/10.11648/j.ajn.20170303.14
AB  - This study focuses on the solar cells based on CIS simulation with buffer layer zinc oxide (ZnO) and fluorine-doped zinc oxide (ZnO:F). ZnO is a multifunctional material with several applications in electronics and photovoltaics, with multiple possibilities of synthesis involve inexpensive methods. ZnO (ZnO:F) is a prominent candidate to be an alternative buffer layer to so-called toxic cadmium sulphide (CdS) in CIS based solar cells. A promising result has been achieved with an efficiency of 22% with Voc = 0.565 V, Jsc = 45 mA/cm2 and fill factor = 82% by using ZnO (ZnO:F) as a buffer layer. It is also found that the high efficiency of CIS absorber layer thickness is between 1500nm and 2000nm. Our results are in good agreement with those reported in the literature from experiments.
VL  - 3
IS  - 3
ER  -

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Author Information

T. Belal

Department of Physics, Laboratory-N Body & Structure of Matter, Algiers, Algeria
R. Tala-Ighil Zair

University M'hamed Bougara Boumerdes, URMPE Research Unit, Institute of Electrical & Electronic Engineering, Boumerdes, Algeria
F. Ghezal

University M'hamed Bougara Boumerdes, URMPE Research Unit, Institute of Electrical & Electronic Engineering, Boumerdes, Algeria

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Plain Text BibTeX RIS

APA Style

T. Belal, R. Tala-Ighil Zair, F. Ghezal. (2017). Numerical Simulation of CuInSe2 (CIS) Thin Film Solar Cell with (ZnO, ZnO:F) Buffer Layers. American Journal of Nanosciences, 3(3), 53-58. https://doi.org/10.11648/j.ajn.20170303.14

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ACS Style

T. Belal; R. Tala-Ighil Zair; F. Ghezal. Numerical Simulation of CuInSe2 (CIS) Thin Film Solar Cell with (ZnO, ZnO:F) Buffer Layers. Am. J. Nanosci. 2017, 3(3), 53-58. doi: 10.11648/j.ajn.20170303.14

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AMA Style

T. Belal, R. Tala-Ighil Zair, F. Ghezal. Numerical Simulation of CuInSe2 (CIS) Thin Film Solar Cell with (ZnO, ZnO:F) Buffer Layers. Am J Nanosci. 2017;3(3):53-58. doi: 10.11648/j.ajn.20170303.14

Copy | Download

@article{10.11648/j.ajn.20170303.14,
  author = {T. Belal and R. Tala-Ighil Zair and F. Ghezal},
  title = {Numerical Simulation of CuInSe2 (CIS) Thin Film Solar Cell with (ZnO, ZnO:F) Buffer Layers},
  journal = {American Journal of Nanosciences},
  volume = {3},
  number = {3},
  pages = {53-58},
  doi = {10.11648/j.ajn.20170303.14},
  url = {https://doi.org/10.11648/j.ajn.20170303.14},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajn.20170303.14},
  abstract = {This study focuses on the solar cells based on CIS simulation with buffer layer zinc oxide (ZnO) and fluorine-doped zinc oxide (ZnO:F). ZnO is a multifunctional material with several applications in electronics and photovoltaics, with multiple possibilities of synthesis involve inexpensive methods. ZnO (ZnO:F) is a prominent candidate to be an alternative buffer layer to so-called toxic cadmium sulphide (CdS) in CIS based solar cells. A promising result has been achieved with an efficiency of 22% with Voc = 0.565 V, Jsc = 45 mA/cm2 and fill factor = 82% by using ZnO (ZnO:F) as a buffer layer. It is also found that the high efficiency of CIS absorber layer thickness is between 1500nm and 2000nm. Our results are in good agreement with those reported in the literature from experiments.},
 year = {2017}
}

Copy | Download

TY  - JOUR
T1  - Numerical Simulation of CuInSe2 (CIS) Thin Film Solar Cell with (ZnO, ZnO:F) Buffer Layers
AU  - T. Belal
AU  - R. Tala-Ighil Zair
AU  - F. Ghezal
Y1  - 2017/10/23
PY  - 2017
N1  - https://doi.org/10.11648/j.ajn.20170303.14
DO  - 10.11648/j.ajn.20170303.14
T2  - American Journal of Nanosciences
JF  - American Journal of Nanosciences
JO  - American Journal of Nanosciences
SP  - 53
EP  - 58
PB  - Science Publishing Group
SN  - 2575-4858
UR  - https://doi.org/10.11648/j.ajn.20170303.14
AB  - This study focuses on the solar cells based on CIS simulation with buffer layer zinc oxide (ZnO) and fluorine-doped zinc oxide (ZnO:F). ZnO is a multifunctional material with several applications in electronics and photovoltaics, with multiple possibilities of synthesis involve inexpensive methods. ZnO (ZnO:F) is a prominent candidate to be an alternative buffer layer to so-called toxic cadmium sulphide (CdS) in CIS based solar cells. A promising result has been achieved with an efficiency of 22% with Voc = 0.565 V, Jsc = 45 mA/cm2 and fill factor = 82% by using ZnO (ZnO:F) as a buffer layer. It is also found that the high efficiency of CIS absorber layer thickness is between 1500nm and 2000nm. Our results are in good agreement with those reported in the literature from experiments.
VL  - 3
IS  - 3
ER  -

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