Optimum Parameters for Obtaining Polycrystalline Silicon for Photovoltaic Application

B. Zaidi; C. Shekhar; B. Hadjoudja; B. Chouial; A. Chibani; R. Li; M. V. Madhava Rao

doi:doi:10.11648/j.ajn.20150101.11

| Peer-Reviewed

Optimum Parameters for Obtaining Polycrystalline Silicon for Photovoltaic Application

B. Zaidi, C. Shekhar, B. Hadjoudja, B. Chouial, A. Chibani, R. Li, M. V. Madhava Rao

Published in American Journal of Nanosciences (Volume 1, Issue 1)

Received: 15 September 2015 Accepted: 23 September 2015 Published: 29 September 2015

Views: Downloads:

Download PDF

Share This Article

Twitter
Linked In
Facebook

Abstract

The cost effective conversion of solar energy into electricity via solar cells remains an ongoing concern of researchers worldwide. The use of polysilicon has been suggested as a possible alternative to achieve this goal. The presence of traps in the grain boundaries having dangling bonds, however, limits the photovoltaic efficiency of solar cells synthesized from polysilicon. The present work constitutes search for optimal processing parameters for the development of polycrystalline silicon solar cells and their large scale manufacturing. The processing parameters depend essentially on the operating temperature, duration of the isothermal heating and the rate of growth of the polysilicon solar cell. These parameter in turn depends highly on the crystallographic states and purity of the material. The optimal processing parameters result in high nucleation rate followed by growth of the silicon grains. This process leads to the crystallization of polysilicon solar cells. In this study the processing parameters for the melting, crystallization and cooling have been optimized. The X-ray diffraction patterns of the samples show the presence of various crystalline phases. The study of crystal orientations by X-ray diffraction patterns shows the crystal orientation along (111), (110) and (100) planes. The (110) and (100) planes are present predominately on the material surface with an advantage for the (110) plane.

Published in	American Journal of Nanosciences (Volume 1, Issue 1)
DOI	10.11648/j.ajn.20150101.11
Page(s)	1-4
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2015. Published by Science Publishing Group

Keywords

Polycrystalline Silicon, Nucleation and Growth, Crystallographic Orientation, Solar Cells

References

[1]	B. Zaidi, B. Hadjoudja, B. Chouial, S. Gagui, H. Felfli, A. Magramene, A. Chibani; Silicon; 7 (2015) 293–295.
[2]	B. Zaidi, B. Hadjoudja, H. Felfli, B. Chouial, A. Chibani;Revue de Métallurgie; 108 (2011) 443–446.
[3]	B. Zaidi, B. Hadjoudja, B. Chouial, S. Gagui, H. Felfli, A. Chibani; Silicon; 7 (2015) 275–278.
[4]	B. Zaidi, B. Hadjoudja, H. Felfli, A. Chibani; Turk. J. Phys.; 35 (2011) 185–188.
[5]	R. Kishore, J. L. Pastol, G. Revel; Solar Energy Materials; 19 (1987) 221-236.
[6]	A. Eyer, A. Rauber, A. Goetzberger; Optoelec. Devi. Techn.; 5; No 2 (1990) 239-257.
[7]	G. Revel, J. L. Pastol, D. Hania, N. D. Huynh; Revue Phys. Appl.; 22 (1987) 519-528.
[8]	A. Eyer, N. Shillinger, I. Reis, A. Rauber; J. Cryst. Growth; 104 (1990) 119-125.
[9]	P. Gadaud, J. Wopirgard; Revue Phys. Appl.; 23 (1988) 919-924.
[10]	S. Pizzini, D. Narducci, M. Root; Revue Phys. Appl.; 13 (1988) 101-104.
[11]	A. Laugier, J. A. Roger; « Les Photopiles Solaires » (1981).
[12]	P. Andonov, P. Derwin, C. Esling; Revue Phys. Appl.; 22 (1987) 603-612.
[13]	M. Zhu, Y. Cao, X. Guo, J. Liu, M. He, K. Sun; Sol. En. Mat. & Solar Cells; 62 (2000) 109-115.
[14]	S. Mo, E. Peiner, A. Schlachtzki, R. Klockenbrink, E. R. Weber; Mat. Scien. Eng.; B56 (1998) 37-42.

Cite This Article

Plain Text BibTeX RIS

APA Style

B. Zaidi, C. Shekhar, B. Hadjoudja, B. Chouial, A. Chibani, et al. (2015). Optimum Parameters for Obtaining Polycrystalline Silicon for Photovoltaic Application. American Journal of Nanosciences, 1(1), 1-4. https://doi.org/10.11648/j.ajn.20150101.11

Copy | Download

ACS Style

B. Zaidi; C. Shekhar; B. Hadjoudja; B. Chouial; A. Chibani, et al. Optimum Parameters for Obtaining Polycrystalline Silicon for Photovoltaic Application. Am. J. Nanosci. 2015, 1(1), 1-4. doi: 10.11648/j.ajn.20150101.11

Copy | Download

AMA Style

B. Zaidi, C. Shekhar, B. Hadjoudja, B. Chouial, A. Chibani, et al. Optimum Parameters for Obtaining Polycrystalline Silicon for Photovoltaic Application. Am J Nanosci. 2015;1(1):1-4. doi: 10.11648/j.ajn.20150101.11

Copy | Download

@article{10.11648/j.ajn.20150101.11,
  author = {B. Zaidi and C. Shekhar and B. Hadjoudja and B. Chouial and A. Chibani and R. Li and M. V. Madhava Rao},
  title = {Optimum Parameters for Obtaining Polycrystalline Silicon for Photovoltaic Application},
  journal = {American Journal of Nanosciences},
  volume = {1},
  number = {1},
  pages = {1-4},
  doi = {10.11648/j.ajn.20150101.11},
  url = {https://doi.org/10.11648/j.ajn.20150101.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajn.20150101.11},
  abstract = {The cost effective conversion of solar energy into electricity via solar cells remains an ongoing concern of researchers worldwide. The use of polysilicon has been suggested as a possible alternative to achieve this goal. The presence of traps in the grain boundaries having dangling bonds, however, limits the photovoltaic efficiency of solar cells synthesized from polysilicon. The present work constitutes search for optimal processing parameters for the development of polycrystalline silicon solar cells and their large scale manufacturing. The processing parameters depend essentially on the operating temperature, duration of the isothermal heating and the rate of growth of the polysilicon solar cell. These parameter in turn depends highly on the crystallographic states and purity of the material. The optimal processing parameters result in high nucleation rate followed by growth of the silicon grains. This process leads to the crystallization of polysilicon solar cells. In this study the processing parameters for the melting, crystallization and cooling have been optimized. The X-ray diffraction patterns of the samples show the presence of various crystalline phases. The study of crystal orientations by X-ray diffraction patterns shows the crystal orientation along (111), (110) and (100) planes. The (110) and (100) planes are present predominately on the material surface with an advantage for the (110) plane.},
 year = {2015}
}

Copy | Download

TY - JOUR
T1 - Optimum Parameters for Obtaining Polycrystalline Silicon for Photovoltaic Application
AU - B. Zaidi
AU - C. Shekhar
AU - B. Hadjoudja
AU - B. Chouial
AU - A. Chibani
AU - R. Li
AU - M. V. Madhava Rao
Y1 - 2015/09/29
PY - 2015
N1 - https://doi.org/10.11648/j.ajn.20150101.11
DO - 10.11648/j.ajn.20150101.11
T2 - American Journal of Nanosciences
JF - American Journal of Nanosciences
JO - American Journal of Nanosciences
SP - 1
EP - 4
PB - Science Publishing Group
SN - 2575-4858
UR - https://doi.org/10.11648/j.ajn.20150101.11
AB - The cost effective conversion of solar energy into electricity via solar cells remains an ongoing concern of researchers worldwide. The use of polysilicon has been suggested as a possible alternative to achieve this goal. The presence of traps in the grain boundaries having dangling bonds, however, limits the photovoltaic efficiency of solar cells synthesized from polysilicon. The present work constitutes search for optimal processing parameters for the development of polycrystalline silicon solar cells and their large scale manufacturing. The processing parameters depend essentially on the operating temperature, duration of the isothermal heating and the rate of growth of the polysilicon solar cell. These parameter in turn depends highly on the crystallographic states and purity of the material. The optimal processing parameters result in high nucleation rate followed by growth of the silicon grains. This process leads to the crystallization of polysilicon solar cells. In this study the processing parameters for the melting, crystallization and cooling have been optimized. The X-ray diffraction patterns of the samples show the presence of various crystalline phases. The study of crystal orientations by X-ray diffraction patterns shows the crystal orientation along (111), (110) and (100) planes. The (110) and (100) planes are present predominately on the material surface with an advantage for the (110) plane.
VL - 1
IS - 1
ER -

Copy | Download

Author Information

B. Zaidi

Laboratoire des Semi-Conducteurs, Département de Physique, Faculté des Sciences, Université Badji-Mokhtar, Annaba, Algérie
C. Shekhar

Department of Applied Physics, Amity University, Gurgaon, India
B. Hadjoudja

Laboratoire des Semi-Conducteurs, Département de Physique, Faculté des Sciences, Université Badji-Mokhtar, Annaba, Algérie
B. Chouial

Laboratoire des Semi-Conducteurs, Département de Physique, Faculté des Sciences, Université Badji-Mokhtar, Annaba, Algérie
A. Chibani

Laboratoire des Semi-Conducteurs, Département de Physique, Faculté des Sciences, Université Badji-Mokhtar, Annaba, Algérie
R. Li

Department of Chemical Engineering, Louisiana State University, LA, USA
M. V. Madhava Rao

Department of Physics, Osmania University, Hyderabad, India

Download PDF

Sections

Plain Text BibTeX RIS

APA Style

B. Zaidi, C. Shekhar, B. Hadjoudja, B. Chouial, A. Chibani, et al. (2015). Optimum Parameters for Obtaining Polycrystalline Silicon for Photovoltaic Application. American Journal of Nanosciences, 1(1), 1-4. https://doi.org/10.11648/j.ajn.20150101.11

Copy | Download

ACS Style

B. Zaidi; C. Shekhar; B. Hadjoudja; B. Chouial; A. Chibani, et al. Optimum Parameters for Obtaining Polycrystalline Silicon for Photovoltaic Application. Am. J. Nanosci. 2015, 1(1), 1-4. doi: 10.11648/j.ajn.20150101.11

Copy | Download

AMA Style

B. Zaidi, C. Shekhar, B. Hadjoudja, B. Chouial, A. Chibani, et al. Optimum Parameters for Obtaining Polycrystalline Silicon for Photovoltaic Application. Am J Nanosci. 2015;1(1):1-4. doi: 10.11648/j.ajn.20150101.11

Copy | Download

@article{10.11648/j.ajn.20150101.11,
  author = {B. Zaidi and C. Shekhar and B. Hadjoudja and B. Chouial and A. Chibani and R. Li and M. V. Madhava Rao},
  title = {Optimum Parameters for Obtaining Polycrystalline Silicon for Photovoltaic Application},
  journal = {American Journal of Nanosciences},
  volume = {1},
  number = {1},
  pages = {1-4},
  doi = {10.11648/j.ajn.20150101.11},
  url = {https://doi.org/10.11648/j.ajn.20150101.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajn.20150101.11},
  abstract = {The cost effective conversion of solar energy into electricity via solar cells remains an ongoing concern of researchers worldwide. The use of polysilicon has been suggested as a possible alternative to achieve this goal. The presence of traps in the grain boundaries having dangling bonds, however, limits the photovoltaic efficiency of solar cells synthesized from polysilicon. The present work constitutes search for optimal processing parameters for the development of polycrystalline silicon solar cells and their large scale manufacturing. The processing parameters depend essentially on the operating temperature, duration of the isothermal heating and the rate of growth of the polysilicon solar cell. These parameter in turn depends highly on the crystallographic states and purity of the material. The optimal processing parameters result in high nucleation rate followed by growth of the silicon grains. This process leads to the crystallization of polysilicon solar cells. In this study the processing parameters for the melting, crystallization and cooling have been optimized. The X-ray diffraction patterns of the samples show the presence of various crystalline phases. The study of crystal orientations by X-ray diffraction patterns shows the crystal orientation along (111), (110) and (100) planes. The (110) and (100) planes are present predominately on the material surface with an advantage for the (110) plane.},
 year = {2015}
}

Copy | Download