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Research Article | | Peer-Reviewed

Numerical Simulation of the Performance of the Cu(In,Ga)Se2-based Solar Photovoltaic Cell as a Function of the Space Charge Region Width

Daouda Oubda*,  Alfred Bayala,  Winde Nongue Daniel Koumbem,  Yacouba Coulibaly,  Francois Zougmore
Published in American Journal of Modern Physics (Volume 15, Issue 5)
Received: 17 August 2026     Accepted: 15 September 2026     Published: 20 September 2026
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Abstract

In a global context marked by constantly increasing energy demand, dwindling fossil fuel resources, and growing environmental concerns, the search for alternative, clean, and sustainable energy sources has become essential. Several questions remain regarding the production of abundant, low-cost energy without environmental impact. Therefore, optimizing the performance of thin-film photovoltaic (PV) solar cells has been the subject of numerous studies. Our study falls within this perspective and analyzes the role of the space charge region (SCR) in the performance optimization process. The aim of our study is to obtain improved electrical parameters. To achieve this objective, we opted for numerical simulation with One-dimensional Solar Cell Capacities Simulation software (SCAPS-1D) of the Mo/CIGS/CdS/ZnO structure. The results obtained show a significant decrease in the open circuit voltage (VOC) and the fill factor (FF) as the SCR width increases. The short-circuit current density (JSC) values increase with increasing SCR width and reach their maximum at a SCR value of 600 nm. As for the conversion efficiency, the values decrease for 100 nm≤ WSCR≤200 nm then remain almost constant for 200 nmSCR<600 nm. Beyond 600 nm, the conversion efficiency values gradually decrease. All the results show the need for an average SCR to obtain high performance and good stability (200≤WSCR≤700 nm). Future research will consider the effects of donor and acceptor density in the performance optimization process.

Published in American Journal of Modern Physics (Volume 15, Issue 5)
DOI 10.11648/j.ajmp.20261505.11
Page(s) 140-147
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2026. Published by Science Publishing Group
Previous article
Keywords

Solar PV Energy, Solar PV Cell, Space Charge Region, Internal Electric Field Strength, Numerical Simulation, Electrical Parameters

1. Introduction
In a global context marked by a constant increase in energy demand, the scarcity of fossil resources and growing environmental concerns, the search for alternative, clean and sustainable energy sources is becoming a necessity
[1]
.
Several questions remain regarding the production of abundant, low-cost energy without environmental impact
[2]
. This is why the optimization of the performance of thin-film PV solar cells has been and continues to be the subject of several studies
[3-7]
.
Regardless of the structure of a PV solar cell, optimizing its parameters is necessary to achieve good efficiency. Typically, the parameters to optimize are those whose variation is sensitive to the operation of the PV solar cell. The values of the optimal parameters depend, of course, on the solar cell structure, the quality of the material, the substrate (lifespan, mobility, diffusion length), the recombination velocity on the surface (front and back faces), and many other factors. Optimizing the performance of a PV solar cell therefore consists of studying the influence of these parameters on its overall behavior in order to obtain a structure that offers maximum efficiency.
The thin-film concept is very important. It should be noted that a variation on the order of a nanometer in the thickness of one of the layers: zinc oxide (ZnO) window layer, cadmium sulfured (CdS) buffer layer or Copper Indium Gallium diselenide.
(Cu(In,Ga)Se2) absorber layer in general, and in particular the width of the space charge region (WSCR), has considerable effects on the operation of the PV solar cell. The WSCR is the most sensitive and important part of the PV solar cell; it is where the majority of the photovoltaic solar process takes place. Optimizing the performance of the PV solar device must necessarily take into account the properties of the WSCR. Figure 1 presents the model of the space charge zone, and equations (2) to (3) provide the expressions for the WSCR width for a heterojunction and are used in the simulation.
In this article, our study focuses on numerically simulating the performance of our PV solar cell model. The aim of our study is to obtain improved electrical parameters. To achieve this objective, we opted for numerical simulation using SCAPS-1D software of the Mo/CIGS/CdS/ZnO structure.
2. Material and Method
2.1. Modeling of the SCR of the CIGS PV Solar Cell
When two semiconductors of different conductivities of type p and n are in contact with each other, a p-n junction is formed (Figure 1) and a space charge is created
[8]
. This is the origin of the appearance of a potential barrier and an internal electric field
[8]
. One of the most important characteristics of the p-n junction, which is taken into account in this article for the numerical simulation of the performance of our PV solar cell model, is the width of the space charge region (WSCR) (Figure 1).
Figure 1 presents the space charge region model. Optimization consists of varying the parameter under study characterizing the PV solar cell (WSCR) to reach maximum parameters. The structure of the solar cell studied is presented in our previous work
[3, 7, 9]
.
We optimize the performance of the PV solar cell through the current-voltage density characteristic.
Figure 1. Model of the space charge region of a p-n junction and the explanation of the constituants elements.
Where Wp is the SCR created by positive charge carriers and Wn the SCR created by negative charge carriers. E, the internal electrostatic field.
In the case of a heterojunction, the SCR extends further into the p zone, a situation encountered in thin-film PV solar cells. Indeed, in the case of thin-film PV solar cells in general and in particular PV solar cells based on CIGS, the doping of the n-type layer is more important than that of the p-type layer. Consequently, most of the SCR is found in the p zone and allows better generation of charge carriers and obtaining better conversion efficiency.
Using the continuity at the interface of the two semiconductors we have
[10]
:
(1)
The width of the SCR in darkness and without polarization is:
(2)
Where Vbi is the internal potential
Under illumination and in open circuit:
(3)
With ND the density of donors in the semiconductor (n) and NA the density of acceptors in the semiconductor (p).
When a solar PV cell is illuminated and feeds into an external circuit, its pn junction operates in a forward bias regime. Light energy (photons) creates electron-hole pairs in the semiconductor. The electric field in the depletion region separates these charges; electrons move toward the n-region and holes toward the p-region. The accumulation of charges creates an electromotive force that lowers the potential barrier of the junction. This charge accumulation reduces the height of the potential barrier, which in turn lowers the effect of the internal voltage, thus decreasing the width of the depletion region.
Finally, it should be noted that our study is based on the case of a highly asymmetric junction, which implies that:
And
(4)
We have:
(5)
2.2. Parameters in Numerical Simulation
We consider any metal-semiconductor contact to be ohmic, on the one hand thanks to the consideration of the formation of the molybdenum diselenide (MoSe2) layer at the back contact/CIGS layer interface in accordance with Jonas Petterson
[11]
and on the other hand thanks to the choice of the work outputs of the metal layers (front and back contacts) for the simulation (Table 1).
The back contact layer (metallic) is made of molybdenum (Mo), it ensures the collection of positive charges which result from the conversion of incident photons into electron-hole pairs. The permeability of this layer allows sodium atoms to diffuse and contribute to the best growth of the absorber at low and high temperature
[12-15]
.
Similarly, selenium and gallium from the absorber diffuse into the molybdenum and form molybdenum diselenide (MoSe2) in very small quantities after annealing at 600°C
[16-18]
. The good ohmic and electronic behavior of the Mo/CIGS interface is due to the formation of the thin MoSe2 layer
[15, 17, 19]
, which allows for better adhesion of the molybdenum layer to the glass. The role of the MoSe2 layer, approximately 10 nm thick, has been discussed within the CIGS community
[16, 18]
. It is now established that MoSe2 is essential for facilitating the formation of a quasi-ohmic electrical contact at the interface between CIGS and molybdenum
[16]
. MoSe2 has a band gap of 1.41 eV, which reduces recombination at the Mo/CIGS interface
[18, 19]
. The main advantage of this layer is its high stability at high temperatures
[16]
, which directly impacts sodium diffusion
[15, 16]
. The MoSe2 layer also improves CIGS adhesion to the molybdenum layer
[16, 17, 20]
and allows for better open-circuit voltage
[18]
.
Regarding reflection, we neglected the reflection at the rear contact in our simulation due to the significant thickness of the absorber (WCIGS > 100 nm). However, we did consider the reflection at the front contact, since the incident light arrives at this face, resulting in substantial photon loss. This photon loss greatly impacts the performance of the PV solar cell, particularly the short-circuit current density. In many modeling tools, this reflection represents 10% of the incident photons
[21, 22]
, we have fixed the front-face reflection to this value.
2.3. SCAPS − 1D Simulation Software
Several software programs have been developed to numerically simulate solar PV cell models. They offer different possibilities and limitations for PV, but the basic principle remains the same. Among these programs, Analysis for Microelectronic and Photonic Structures (AMPS−1D) and Solar Cell Capacitance Simulator (SCAPS−1D) stand out.
SCAPS-1D is a Windows application developed by Marc Burgelman's team in the Department of Electronics and Information Systems (ELIS) at Ghent University in Belgium. SCAPS-1D is a one-dimensional numerical simulation software. It was developed to obtain the electrical characteristics of heterojunction and thin-film solar PV cells. Its development is inspired by work on CdTe and Cu(In,Ga)Se2-based solar PV cells
[23, 24]
. The simulated results were in very good agreement with measured results
[25]
and with results obtained using previously developed software such as AMPS-1D
[26]
. SCAPS-1D allows for the simulation of structures consisting of seven (7) intermediate layers in addition to the front and back contacts for an arbitrary light spectrum, which is a particular advantage. All physical and electronic properties can be displayed and modified in a separate window. Simple models are used for temperature dependence, effective density of states, and thermal agitation velocity. Other parameters such as thickness, band gap, and charge carrier mobilities also come into play in the simulation and have been the subject of our previous publications
[3, 5, 7, 9, 27, 28]
.
Once the desired simulation is complete, the energy band diagram, generation-recombination profile, and current-voltage, capacitance-voltage, capacitance-frequency, and quantum efficiency curves of the photovoltaic device are displayed on the screen. Numerical data for these parameters can also be extracted and analyzed. This functionality makes SCAPS a very attractive program and justifies our choice.
Table 1 below presents the electrical and optical parameters of the different layers involved in the numerical simulation with SCAPS−1D.
Table 1. Base parameters of CIGS cell properties. —barrier height, Se and Sh—surface recombination velocity electron and hole, NC and NV —effective density of states, NAG —acceptor-like defect density, NDG —donor-like defect density, EA and ED —peak energy in, and, —capture cross section electrons and holes, —thermal velocity, WG —characteristic energy.
[3, 4, 5, 7, 22, 28-31]
.

Parameters

CIGS

CdS

ZnO

W(nm)

1000

30

100

Eg(eV)

1,2

2,4

3,3

ᵡe(eV)

4,5

4,45

4,45

ɛ/ɛ0

13,6

10

9

NC(cm-3)

2,2x1018

2,2x1018

2,2x1018

NV(cm-3)

1,8x1019

1,8x1019

1,8x1019

ʋe(cm/s)

5x106

107

107

ʋh(cm/s)

5x106

107

107

µe(cm2/Vs)

102

102

102

µh(cm2/Vs)

25

25

25

NA [cm-3]

1,5x1012

-

-

ND [cm-3]

-

2,5x1016

1018

σe [cm2]

10-16

10-12

10-14

σe [cm2]

10-16

10-12

10-15

Parameters

Right

Left

Фb [eV]

Фbn=0,0

Фbp=0,15

Se [cm/s]

107

107

Sh [cm/s]

107

107

Reflectivity

0,05

0,8
3. Results and Discussions
3.1. Internal Electric Field
Figure 4 shows the evolution of the internal electric field as a function of the width of the space charge region (SCR). We observe that the intensity of the internal electric field decreases drastically with increasing space charge zone width and is in agreement with Equation (5). We also note that our results are in good agreement with data from the literature
[31]
.
Figure 2. Evolution of the internal electric field as a function of the SCR width.
On the one hand, we note that the intensity of the electrical field is directly proportional to the potential difference (ΔV) and inversely proportional to the distance (d) as indicated by equation (6):
(6)
For our study, the distance "d" corresponds to the width of the SCR (WSCR), which gives:
(7)
For a very wide SCR, the electric field strength is very low. On the other hand, we have:
(8)
The maximum intensity of the internal electric field (Eint) is proportional to the density of acceptors (NA) or donors (ND), therefore when the density of acceptors or donors doping decreases, the intensity of the E field decreases.
The decrease in the intensity of the electric field with the widening of the ZCE can result in an increase in the level of recombination phenomena, which can lead to a decrease in the performance of our solar PV device.
3.2. Current-voltage Density Characteristic
Figure 3 represents the J-V characteristic as a function of the width of the SCR.
Figure 3. J-V curves as a function of the width of the SCR.
We observe that as the width of the depletion region increases, the short-circuit current density increases despite a decrease in the electric field strength; however, the open-circuit voltage of the PV solar cell decreases (Figure 3).
These results can be explained by the increasing generation of electron-hole pairs in the SCR as its width increases.
3.3. Electrical Parameters
Regarding the electrical parameters, we note in addition to the VOC (Figure 4), a significant decrease in the FF values with the increase in the width of the SCR (Figure 6).
Figure 4. VOC as a function of SCR width.
Indeed, the accumulation of electrons and holes creates an electric field and a voltage which oppose the initial internal electric field of the junction. As a result, the open circuit voltage Voc increases as the WSCR decreases.
[32-34]
.
Figure 5. FF as a function of SCR width.
However, the short-circuit current density values (Figure 5) increase with increasing SCR width and reach their maximum at a WSCR value of 600 nm. Beyond WSCR=600 nm, the WSCR values gradually decrease. As for the conversion efficiency (Figure 7), the values decrease for 100 nm≤WSCR≤200 nm and then remain almost constant for 200 nm<WSCR<600 nm. Beyond 600 nm, the conversion efficiency values gradually decrease.
Figure 6. JSC as a function of SCR width.
Figure 7. Conversion efficiency as a function of SCR width.
All of these results can be explained by the fact that, as the SCR width increases, the electric field strength decreases (Figure 2), leading to a corresponding increase in the recombination of photogenerated charge carriers. Furthermore, when the SCR width becomes very large due to a significant reduction in doping (Equation (2)) (SCR width >700 nm), the series resistance becomes substantial and can contribute to these results.
For optimal device performance at the maximum power point, an average SCR between 200 nm and 700 nm is required. A SCR between 200 and 700 nm facilitates significant electron-hole pair generation and also enables highly efficient separation and acceleration of these charge carriers due to the very strong electric field strength.
These results confirm the need for a relatively moderate SCR width for good performance of our CIGS-based solar PV cell model. Such a SCR width can be achieved by adjusting the doping of the solar PV device and the Ga concentration in the absorber.
Nima E. Gorji has indeed shown in these works that in the SCR, the absorption coefficient is assumed to be constant at a value of approximately 105 cm−1. The choice of this constant value for the absorption coefficient in the SCR leads to a minimum depletion width of 400 nm, corresponding to an acceptor density of 2.75.1016 cm−3
[35]
.
4. Conclusion
In this article we present the role of the space charge region (SCR) in the performance optimization process of CIGS thin-film photovoltaic solar cells. The results of numerical simulations obtained with SCAPS-1D show that the SCR width plays a crucial role in this performance optimization process.
We also found that the maximum intensity of the internal electric field is proportional to the density of acceptors (NA) or donors (ND), therefore when the density of doping in acceptor or donor decreases, the maximum intensity of the electrical field decreases.
The decrease in the intensity of the electric field with the widening of the SCR would on the one hand be at the origin of the recombination phenomena responsible for the decrease in performance.
The results obtained show a significant decrease in VOC and FF values with increasing SCR width. Short-circuit current density values increase with increasing SCR width and reach their maximum at a WSCR value of 600 nm. Beyond WSCR=600 nm, JSC values gradually decrease. Conversion efficiency values decrease for 100 nm≤WSCR≤200 nm, then remain almost constant for 200 nm< WSCR<600 nm, and gradually decrease beyond 600 nm.
The various results demonstrate the need for a reduced SCR for high performance and good stability (200≤WSCR≤700 nm). Future research will consider the effects of donor and acceptor density in the performance optimization process.
Abbreviations

AMPS−1D

Analysis for Microelectronic and Photonic Structures

CdS

Cadmium Sulfide

CdTe

Cadmium Telluride

CIGS

Copper Indium Gallium Selenide

Cu(In,Ga)Se2

Copper Indium Gallium Diselenide

FF

Fill Factor

JSC

Short Circuit Current Density

MO

Molybdenum

MoSe2

Molybdenum Diselenide

PV

Photovoltaic

SCAPS-1D

One-dimensional Solar Cell Capacities Simulation

SCR

Space Charge Region

Vbi

Internal Potential

VOC

Open Circuit Voltage

WSCR

Space Charge Region Width

ZnO

Zinc Oxide
Author Contributions
Daouda Oubda: Conceptualization, Data curation, Formal Analysis, Funding acquisition, Investigation, Methodology, Software, Validation, Writing – original draft, Writing – review & editing
Alfred Bayala: Conceptualization, Data curation, Methodology, Project administration, Resources, Supervision, Validation, Writing – original draft, Writing – review & editing
Winde Nongue Daniel Koumbem: Conceptualization, Formal Analysis, Funding acquisition, Investigation, Methodology, Project administration, Resources, Software
Yacouba Coulibaly: Formal Analysis, Funding acquisition, Investigation, Methodology, Software, Supervision, Validation
Francois Zougmore: Conceptualization, Formal Analysis, Funding acquisition, Methodology, Project administration, Resources, Supervision, Validation, Visualization
Conflicts of Interest
The authors declare no conflicts of interest.
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    Oubda, D., Bayala, A., Koumbem, W. N. D., Coulibaly, Y., Zougmore, F. (2026). Numerical Simulation of the Performance of the Cu(In,Ga)Se2-based Solar Photovoltaic Cell as a Function of the Space Charge Region Width. American Journal of Modern Physics, 15(5), 140-147. https://doi.org/10.11648/j.ajmp.20261505.11

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    Oubda, D.; Bayala, A.; Koumbem, W. N. D.; Coulibaly, Y.; Zougmore, F. Numerical Simulation of the Performance of the Cu(In,Ga)Se2-based Solar Photovoltaic Cell as a Function of the Space Charge Region Width. Am. J. Mod. Phys. 2026, 15(5), 140-147. doi: 10.11648/j.ajmp.20261505.11

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    AMA Style

    Oubda D, Bayala A, Koumbem WND, Coulibaly Y, Zougmore F. Numerical Simulation of the Performance of the Cu(In,Ga)Se2-based Solar Photovoltaic Cell as a Function of the Space Charge Region Width. Am J Mod Phys. 2026;15(5):140-147. doi: 10.11648/j.ajmp.20261505.11

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  • @article{10.11648/j.ajmp.20261505.11,
  author = {Daouda Oubda and Alfred Bayala and Winde Nongue Daniel Koumbem and Yacouba Coulibaly and Francois Zougmore},
  title = {Numerical Simulation of the Performance of the Cu(In,Ga)Se2-based Solar Photovoltaic Cell as a Function of the Space Charge Region Width},
  journal = {American Journal of Modern Physics},
  volume = {15},
  number = {5},
  pages = {140-147},
  doi = {10.11648/j.ajmp.20261505.11},
  url = {https://doi.org/10.11648/j.ajmp.20261505.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajmp.20261505.11},
  abstract = {In a global context marked by constantly increasing energy demand, dwindling fossil fuel resources, and growing environmental concerns, the search for alternative, clean, and sustainable energy sources has become essential. Several questions remain regarding the production of abundant, low-cost energy without environmental impact. Therefore, optimizing the performance of thin-film photovoltaic (PV) solar cells has been the subject of numerous studies. Our study falls within this perspective and analyzes the role of the space charge region (SCR) in the performance optimization process. The aim of our study is to obtain improved electrical parameters. To achieve this objective, we opted for numerical simulation with One-dimensional Solar Cell Capacities Simulation software (SCAPS-1D) of the Mo/CIGS/CdS/ZnO structure. The results obtained show a significant decrease in the open circuit voltage (VOC) and the fill factor (FF) as the SCR width increases. The short-circuit current density (JSC) values increase with increasing SCR width and reach their maximum at a SCR value of 600 nm. As for the conversion efficiency, the values decrease for 100 nm≤ WSCR≤200 nm then remain almost constant for 200 nmSCRSCR≤700 nm). Future research will consider the effects of donor and acceptor density in the performance optimization process.},
 year = {2026}
}

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  • TY  - JOUR
T1  - Numerical Simulation of the Performance of the Cu(In,Ga)Se2-based Solar Photovoltaic Cell as a Function of the Space Charge Region Width
AU  - Daouda Oubda
AU  - Alfred Bayala
AU  - Winde Nongue Daniel Koumbem
AU  - Yacouba Coulibaly
AU  - Francois Zougmore
Y1  - 2026/09/20
PY  - 2026
N1  - https://doi.org/10.11648/j.ajmp.20261505.11
DO  - 10.11648/j.ajmp.20261505.11
T2  - American Journal of Modern Physics
JF  - American Journal of Modern Physics
JO  - American Journal of Modern Physics
SP  - 140
EP  - 147
PB  - Science Publishing Group
SN  - 2326-8891
UR  - https://doi.org/10.11648/j.ajmp.20261505.11
AB  - In a global context marked by constantly increasing energy demand, dwindling fossil fuel resources, and growing environmental concerns, the search for alternative, clean, and sustainable energy sources has become essential. Several questions remain regarding the production of abundant, low-cost energy without environmental impact. Therefore, optimizing the performance of thin-film photovoltaic (PV) solar cells has been the subject of numerous studies. Our study falls within this perspective and analyzes the role of the space charge region (SCR) in the performance optimization process. The aim of our study is to obtain improved electrical parameters. To achieve this objective, we opted for numerical simulation with One-dimensional Solar Cell Capacities Simulation software (SCAPS-1D) of the Mo/CIGS/CdS/ZnO structure. The results obtained show a significant decrease in the open circuit voltage (VOC) and the fill factor (FF) as the SCR width increases. The short-circuit current density (JSC) values increase with increasing SCR width and reach their maximum at a SCR value of 600 nm. As for the conversion efficiency, the values decrease for 100 nm≤ WSCR≤200 nm then remain almost constant for 200 nmSCRSCR≤700 nm). Future research will consider the effects of donor and acceptor density in the performance optimization process.
VL  - 15
IS  - 5
ER  -

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